GFB75N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 6.5mΩ ID 80A H C N t E ET c u R d T ENF ro P G New D ® TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. 0.42 (10.66) D 0.320 (8.13) 0.360 (9.14) G PIN D S 0.055 (1.39) 0.066 (1.68) 0.575 (14.60) 0.625 (15.88) 0.63 (17.02) Dimensions in inches and (millimeters) Seating Plate 0.120 (3.05) 0.155 (3.94) -T- 0.33 (8.38) Mounting Pad Layout 0.014 (0.35) 0.096 (2.43) 0.020 (0.51) 0.102 (2.59) 0.027 (0.686) 0.100 (2.54) 0.037 (0.940) 0.130 (3.30) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) Mechanical Data Features Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 1.3g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 80 IDM 240 PD 69.4 27.8 W TJ, Tstg –55 to 150 °C TL 275 °C RθJC 1.8 °C/W RθJA 40 °C/W Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TA = 25°C TA = 100°C Operating Junction and Storage Temperature Range Lead Temperature (1/8” from case for 5 sec.) Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (2) Notes: (1) Maximum DC current limited by the package (2) 1-in2 2oz. Cu PCB mounted Unit V A 5/1/01 GFB75N03 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 – – V Drain-Source On-State Resistance(1) RDS(on) VGS = 10V, ID = 38A – 5.8 6.5 VGS = 4.5V, ID = 31A – 8.5 9.5 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 – 3.0 V Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V – – 1.0 µA Gate-Body Leakage IGSS VGS = ±20V, VDS = 0V – – ±100 nA ID(on) VDS ≥ 5V, VGS = 10V 75 – – A gfs VDS = 15V, ID = 38A – 61 – S VDS=15V, ID=38A, VGS=5V – 32.5 46 – 63 90 – 11 – – 11 – – 13 26 – 16 29 – 94 132 – 38 57 – 3240 – – 625 – – 285 – = 25°C unless otherwise noted) Static (1) On-State Drain Current (1) Forward Transconductance mΩ Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time VDS = 15V, VGS = 10V ID = 38A VDD = 15V, RL = 15Ω tr Turn-Off Delay Time ID ≅ 1A, VGEN = 10V td(off) Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss RG = 6Ω VDS = 15V, VGS = 0V f = 1.0MHZ nC ns pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS – – – 75 A VSD IS = 38A, VGS = 0V – 0.9 1.3 V Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 10V 6.0V ID -- Drain Source Current (A) 80 4.5V 80 5.0V 3.5V 60 40 3.0V 20 0 50 TJ = 125°C 40 30 --55°C 25°C 20 0 0 1 2 3 4 1 4 5 Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 0.016 ID = 250µA 0.014 1.5 1.3 1.1 0.9 0.7 0.012 0.01 VGS = 4.5V 0.008 VGS = 10V 0.006 0.004 0.002 0 --25 0 25 50 75 100 125 150 Fig. 5 – On-Resistance vs. Junction Temperature 1.6 VGS = 10V ID = 38A 1.4 1.2 1 0.8 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 20 40 60 ID -- Drain Current (A) TJ -- Junction Temperature (°C) 0.6 --50 3 VGS -- Gate-to-Source Voltage (V) 1.7 0.5 --50 2 VDS -- Drain-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) V(th) -- Gate-to-Source Threshold Voltage (V) 60 10 VGS = 2.5V RDS(ON) -- On-Resistance (Normalized) VDS = 10V 70 4.0V ID -- Drain Source Current (A) 100 125 150 80 100 GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 0.03 10 VDS = 15V ID = 38A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 38A 0.025 0.02 0.015 TJ = 125°C 0.01 0.005 25°C 0 6 4 2 0 2 4 6 8 10 0 10 20 30 40 50 60 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 – Capacitance Fig. 9 – Source-Drain Diode Forward Voltage 70 100 4000 VGS = 0V f = 1MHZ VGS = 0V 3500 Ciss 3000 IS -- Source Current (A) C -- Capacitance (pF) 8 2500 2000 1500 1000 10 TJ = 125°C 1 25°C 0.1 --55°C Coss 500 0 Crss 0.01 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) 25 30 0 0.2 0.4 0.6 0.8 1 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 GFB75N03 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature Fig. 11 – Transient Thermal Impedance 1 D = 0.5 ID = 250µA RΘJA (norm) -- Normalized Thermal Impedance BVDSS -- Breakdown Voltage (V) 41 40 39 38 37 36 35 --50 0.2 PDM 0.1 0.1 0.05 t1 1. Duty Cycle, D = t1/t2 2. RθJC (t) = RθJC(norm) *RθJC 3. RθJC = 1.8°C/W 4. TJ - TC = PDM * RθJC (t) 0.01 --25 0 25 50 75 100 125 150 0.0001 0.001 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration 0.1 1 10 Fig. 13 – Maximum Safe Operating Area 1000 Single Pulse RθJA = 1.8°C/W TC = 25°C ID -- Drain Current (A) 800 Power (W) 0.01 Pulse Duration (sec.) 1000 600 400 10 0.001 0.01 0.1 Pulse Duration (sec.) 1 10 0µ s 100 1m 10 s m s RDS(ON) Limit 10 100ms VGS = 10V Single Pulse RθJC = 1.8°C/W TA = 25°C 200 0 0.0001 t2 Single Pulse 1 0.1 DC 1 10 VDS -- Drain-Source Voltage (V) 100