ETC GFD50N03

GFD50N03
N-Channel Enhancement-Mode MOSFET
VDS 30V RDS(ON) 9mΩ ID 65A
H
C
N
TREENFET
D
®
G
TO-252 (DPAK)
0.265 (6.73)
0.255 (6.48)
0.094 (2.39)
0.087 (2.21)
t
c
u
rod
P
New
G
S
0.214 (5.44)
0.206 (5.23)
0.023 (0.58)
0.018 (0.46)
0.190
(4.826)
D
0.050 (1.27)
0.035 (0.89)
0.165
(4.191)
0.170 (4.32) min.
0.245 (6.22)
0.235 (5.97)
G
S
0.035 (0.89)
0.028 (0.71)
0.410 (10.41)
0.380 (9.65)
0.060 (1.52)
0.045 (1.14)
0.100
(2.54)
0.197 (5.00)
0.177 (4.49)
0.118
(3.0)
0.040 (1.02)
0.025 (0.64)
0.204 (5.18)
0.156 (3.96)
0.023 (0.58)
0.018 (0.46)
0.020 (0.51)
min.
0.045 (1.14)
0.035 (0.89)
0.009 (0.23)
0.001 (0.03)
0.243
(6.172)
Dimensions in inches
and (millimeters)
0.063
(1.6)
Mounting Pad Layout
Mechanical Data
Features
Case: JEDEC TO-252 molded plastic body
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight: 0.011oz., 0.4g
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
and motor drives
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (T
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
Pulsed Drain Current
Maximum Power Dissipation
TC = 25°C
TC = 100°C
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
(2)
Junction-to-Ambient Thermal Resistance
C
= 25°C unless otherwise noted)
Limit
Unit
VDS
30
VGS
± 20
ID
65
IDM
150
PD
62.5
25.0
W
TJ, Tstg
–55 to 150
°C
RθJC
2.0
°C/W
RθJA
40
°C/W
V
A
Notes: (1) Maximum DC current limited by the package.
(2) 1-in2 2oz. Cu PCB mounted
5/29/01
GFD50N03
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (T
J
Parameter
= 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
30
—
—
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
1.0
—
3.0
V
IGSS
VDS = 0V, VGS = ±20V
—
—
±100
nA
IDSS
VDS = 30V, VGS = 0V
—
—
1.0
µA
ID(on)
VDS ≥ 5V, VGS = 10V
50
—
—
A
VGS = 10V, ID = 15A
—
7.1
9
VGS = 4.5V, ID = 13A
—
10
12
VDS = 15V, ID = 15A
—
50
—
VDS=15V, VGS=5V, ID=15A
—
31
43
—
60
84
—
9
—
—
8.5
—
—
13
26
—
16
29
—
94
132
—
38
57
VGS = 0V
—
3240
—
Static
Gate-Body Leakage
Zero Gate Voltage Drain Current
(1)
On-State Drain Current
Drain-Source On-State Resistance(1)
RDS(on)
Forward Transconductance(1)
gfs
mΩ
S
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
VDS = 15V, VGS = 10V
ID = 15A
VDD = 15V, RL = 15Ω
tr
Turn-Off Delay Time
ID ≅ 1A, VGEN = 10V
td(off)
Fall Time
RG = 6Ω
tf
nC
ns
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15V
—
625
—
Crss
f = 1.0MHZ
—
285
—
IS
—
—
—
20
A
VSD
IS = 20A, VGS = 0V
—
0.85
1.3
V
Reverse Transfer Capacitance
pF
Source-Drain Diode
Max Diode Forward Current
(1)
Diode Forward Voltage
Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%
VDD
ton
Switching
Test Circuit
RD
VIN
VOUT
D
Switching
Waveforms
td(on)
RG
tr
td(off)
tf
90 %
90%
Output, VOUT
VGEN
toff
10%
10%
INVERTED
DUT
G
90%
50%
S
Input, VIN
50%
10%
PULSE WIDTH
GFD50N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 2 – Transfer Characteristics
Fig. 1 – Output Characteristics
10V
70 6.0V
4.5V
60
4.0V
80
VDS = 10V
70
5.0V
ID -- Drain Current (A)
ID -- Drain-to-Source Current (A)
80
3.5V
50
40
30
3.0V
20
10
60
50
TJ = 125°C
40
30
--55°C
20
25°C
10
VGS = 2.5V
0
0
0
1
2
3
4
1
2
3
4
VDS -- Drain-to-Source Voltage (V)
VGS -- Gate-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
Fig. 4 – On-Resistance vs.
Drain Current
2
5
0.015
1.8
RDS(ON) -- On-Resistance (Ω)
V(th) -- Gate-to-Source Threshold
Voltage (V)
ID = 250µA
1.6
1.4
1.2
1
0.8
0.6
--50
0
25
50
75
100
125
150
0.0075
VGS = 10V
0.005
0.0025
1.6
VGS = 10V
ID = 15A
1.4
1.2
1
0.8
--25
0
25
50
75
100
TJ -- Junction Temperature (°C)
0
10
20
30
40
50
ID -- Drain Current (A)
Fig. 5 – On-Resistance vs.
Junction Temperature
RDS(ON) -- On-Resistance
(Normalized)
VGS = 4.5V
0.01
0
--25
TJ -- Junction Temperature (°C)
0.6
--50
0.0125
125
150
60
70
80
GFD50N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 6 – On-Resistance vs.
Gate-to-Source Voltage
Fig. 7 – Gate Charge
0.03
10
VDS = 15V
ID = 15A
VGS -- Gate-to-Source Voltage (V)
RDS(ON) -- On-Resistance (Ω)
ID = 15A
0.025
0.02
0.015
TJ = 125°C
0.01
0.005
25°C
0
8
6
4
2
0
2
4
6
8
10
0
10
VGS -- Gate-to-Source Voltage (V)
30
40
50
60
Fig. 9 – Source-Drain Diode
Forward Voltage
Fig. 8 – Capacitance
100
4000
3500
VGS = 0V
f = 1MHZ
VGS = 0V
Ciss
3000
IS -- Source Current (A)
C -- Capacitance (pF)
20
Qg -- Gate Charge (nC)
2500
2000
1500
1000
10
TJ = 125°C
1
25°C
0.1
--55°C
Coss
500
0
Crss
0.01
0
5
10
15
20
VDS -- Drain-to-Source Voltage (V)
25
30
0
0.2
0.4
0.6
0.8
1
VSD -- Source-to-Drain Voltage (V)
1.2
1.4
GFD50N03
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (T
A
= 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
Fig. 11 – Transient Thermal
Impedance
RθJA (norm) -- Normalized Thermal
Impedance
ID = 250µA
42
41
40
39
38
37
36
--50
--25
0
25
50
75
100
125
1. Duty Cycle, D = t1/t2
2. RθJA(t) = RθJA(norm) *RθJA
3. RθJA = 2.0°C/W
4. TJ -- TA = PDM* RθJA(t)
150
Pulse Duration (sec.)
TJ -- Junction Temperature (°C)
Fig. 12 – Power vs. Pulse Duration
Fig. 13 – Maximum Safe Operating Area
1000
1000
800
ID -- Drain Current (A)
BVDSS -- Breakdown Voltage (V)
43
600
400
0.001
0.01
0.1
1
10
0µ
s
1m
s
10
m
10
RDS(ON) Limit
s
DC
VGS = 10V
Single Pulse
RθJC = 2.0°C/W
TA = 25°C
200
0
0.0001
10
100
1
0.1
1
10
VDS -- Drain-Source Voltage (V)
100