GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117Ω ID 2.5A H C N TREENFET G TO-236AB (SOT-23) ® .118 (3.0) .110 (2.8) .020 (0.51) .015 (0.37) Top View .055 (1.40) .047 (1.20) 3 0.035 (0.9) 0.079 (2.0) 1. Gate 2. Source 3. Drain 2 0.037 (0.95) 0.037 (0.95) .098 (2.5) .091 (2.3) .020 (0.51) .020 (0.51) .015 (0.37) .015 (0.37) Mounting Pad Layout .047 (1.20) .035 (0.90) .007 (.180) .003 (.085) .041 (1.03) .041 (1.03) .035 (0.89) .035 (0.89) Dimensions in inches and (millimeters) max. .004 (0.1) 1 Pin Configuration 0.031 (0.8) Mechanical Data Features Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: 04 • Advanced trench process technology • High density cell design for ultra-low on-resistance • Popular SOT-23 package with copper lead-frame for superior thermal and electrical capabilities • Compact and low profile Maximum Ratings and Thermal Characteristics Parameter Symbol Drain-Source Voltage Gate-Source-Voltage Continuous Drain Current Pulsed Drain Current TJ = 150°C TA = 25°C (1) (2) Maximum Power Dissipation TA = 25°C TA = 70°C Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient Thermal Resistance (2) (TA = 25°C unless otherwise noted) Limit Unit VDS 30 V VGS ± 20 V ID 2.5 A IDM 10 A PD 1.25 0.80 W TJ, Tstg –55 to +150 °C RθJA 100 °C/W Notes: (1) Pulse width limited by maximum junction temperature. (2) Surface mounted on FR4 board, (1” x 1”, 2oz. Cu) 5/3/01 GF2304 N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 0.117Ω ID 2.5A Electrical Characteristics (T Parameter J = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 – – V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 – — V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V – – ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V – – 0.5 VDS=30V, VGS=0V, TJ=55°C – – 10 On-State Drain Current(1) ID(on) VDS ≥ 4.5V, VGS = 10V 6 – – VDS ≥ 4.5V, VGS = 4.5V 4 – – VGS = 10V, ID = 2.5A – 0.096 0.117 VGS = 4.5V, ID = 2.0A – 0.135 0.190 VDS = 4.5V, ID = 2.5A – 4.6 – – 3.7 10 – 0.5 – – 0.6 – – 6 20 – 8.8 30 – 26 35 – 2.4 20 Static Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs µA A Ω S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall Time tf VDS = 15V, VGS = 10V ID = 2.5A VDD = 15V, RL = 15Ω ID ≈ 1A, VGEN = 10V RG = 6Ω nC ns Input Capacitance Ciss VGS = 0V – 163 – Output Capacitance Coss VDS = 15V – 27 – Reverse Transfer Capacitance Crss f = 1.0MHZ – 9 – IS — — — 2.1 A VSD IS = 1.25A, VGS = 0V – 0.82 1.2 V pF Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD Switching Test Circuit RD VIN ton Switching Waveforms td(on) tr Output, VOUT VGEN td(off) tf 90 % 90% VOUT D RG toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GF2304 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T 10 A = 25°C unless otherwise noted) 10 4.5V --55°C 8 ID -- Drain Source Current (A) ID -- Drain-to-Source Current (A) VDS = 10V VGS = 5V, 6V, 7V, 8V, 10V 4.0V 6 3.5V 4 3.0V 2 6 TJ = 125°C 4 2 0 0 1 2 3 4 5 0 1 2 3 4 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Capacitance Fig. 4 – On-Resistance vs. Drain Current 5 0.18 220 f = 1 MHz VGS = 0V 200 160 RDS(ON) -- On-Resistance (Ω) 180 C -- Capacitance (pF) 25°C 2.5V 0 Ciss 140 120 100 80 60 40 VGS = 4.5V 0.12 10V 0.06 Coss 20 Crss 0 0 5 10 15 20 25 30 Fig. 5 – Gate Charge 10 VDS = 15V ID = 2.5A 8 6 4 2 0 0 1 2 Qg -- Gate Charge (nC) 3 0 0 2 4 6 ID -- Drain Current (A) VDS Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) 8 4 8 10 GF2304 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Source-Drain Diode Forward Voltage 10 0.4 VGS = 0V 0.3 IS -- Source Current (A) RDS(ON) -- On-Resistance (Ω) ID = 2.5A 0.2 TJ = 125°C 0.1 TJ = 125°C 25°C 25°C --55°C 1 0.3 0 2 4 6 8 10 0.5 VGS -- Gate-to-Source Voltage (V) 0.9 1.1 1.5 1.7 Fig. 9 – Threshold Voltage 1.6 45 ID = 250µA ID = 250µA VGS(th) -- Gate-to-Source Threshold Voltage (V) 43 41 39 1.4 1.2 1 0.8 37 35 --50 1.3 VSD -- Source-to-Drain Voltage (V) Fig. 8 – Breakdown Voltage vs. Junction Temperature BVDSS -- Breakdown Voltage (V) 0.7 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 0.6 --50 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 GF2304 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – On-Resistance vs. Junction Temperature Fig. 11 – Thermal Impedance 1.6 1 D = 0.5 VGS = 10V ID = 2.5A RΘJA (norm) -- Normalized Thermal Impedance RDS(ON) On-Resistance (Normalized) 1.8 1.4 1.2 1.0 0.8 0.6 --50 --25 0 25 50 75 100 125 0.2 0.1 0.1 0.02 t1 0.01 0.01 0.1 1 10 100 Pulse Duration (sec.) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 20 100 Single Pulse RθJA = 100°C/W TA = 25°C ID -- Drain Current (A) 15 Power (W) 1. Duty Cycle, D = t1/t2 2. RθJA (t) = RθJA(norm) *RθJA 3. RθJA = 100°C/W 4. TJ - TA = PDM * RθJA (t) Single Pulse 0.001 0.0001 0.001 150 t2 0.01 TJ -- Junction Temperature (°C) 10 5 0 0.001 PDM 0.05 10 10 0µ s 1m s 10 10 ms 0m s 1 RDS(ON) Limit 1s 0.1 DC VGS = 10V Single Pulse RθJA = 100°C/W TA = 25°C 0.01 0.01 0.1 1 Pulse Duration (sec.) 10 100 0.1 1 10 VDS -- Drain-Source Voltage (V) 100