GFB65N02 N-Channel Enhancement-Mode MOSFET VDS 20V RDS(ON) 8.5mΩ ID 65A H C N t E ET c u R d T ENF ro P G New D ® TO-263AB 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) G S 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. 0.42 (10.66) D 0.320 (8.13) 0.360 (9.14) G PIN D S 0.055 (1.39) 0.066 (1.68) 0.575 (14.60) 0.625 (15.88) 0.33 (8.38) 0.63 (17.02) Dimensions in inches and (millimeters) Seating Plate 0.120 (3.05) 0.155 (3.94) -T0.096 (2.43) Mounting Pad Layout 0.014 (0.35) 0.020 (0.51) 0.102 (2.59) 0.027 (0.686) 0.100 (2.54) 0.037 (0.940) 0.130 (3.30) 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) Mechanical Data Features Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 1.3g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 ID 65 41 IDM 150 PD 57 23 3.1 W TJ, Tstg –55 to 150 °C Junction-to-Case Thermal Resistance RθJC 2.2 °C/W Junction-to-Ambient Thermal Resistance RθJA 40 °C/W Continuous Drain Current TJ = 150°C TC = 25°C TC = 100°C (1) Pulsed Drain Current Power Dissipation TJ = 150°C TC = 25°C TC = 100°C TA = 25°C(2) Operating Junction and Storage Temperature Range Notes: (1) Pulse width limited by maximum junction temperature (2) Surface mounted on a 1in2 2oz. Cu PCB (FR-4 material) Unit V A 10/1/01 GFB65N02 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 20 – – Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 0.8 – 2.5 IGSS VDS = 0V, VGS = ±20V – – ±100 nA VDS = 16V, VGS = 0V – – 1 VDS=16V, VGS=0V, TJ=125°C µA – – 10 VDS ≥ 5V, VGS = 10V 65 – – VGS = 10V, ID = 32A – 6.5 8.5 VGS = 4.5V, ID = 25A – 10.5 13.5 VDS = 10V, ID = 32A – 40 – VDS =10V, VGS =4.5V, ID =32A – 19.5 30 – 38 60 – 6.5 – – 8.5 – – 12 20 Static Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Current(1) ID(on) Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs V A mΩ S Dynamic Total Gate Charge (1) Qg Gate-Source Charge (1) Qgs Gate-Drain Charge (1) Qgd Turn-On Delay Time (1) td(on) Rise Time (1) VDS = 10V, VGS = 10V ID = 32A VDD = 10V, ID = 1A tr Turn-Off Delay Time (1) VGEN = 10V td(off) Fall Time (1) RG = 6Ω tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V f = 1.0MHZ nC – 11 20 – 53 80 – 21 40 – 1920 – 568 – 369 – – 45 – – 150 A – 0.9 1.3 V – 60 – ns – 1.15 – A – 37 – nC ns pF Source-Drain Diode Max. Diode Forward Current IS Max. Pulsed Diode Forward Current (2) ISM Diode Forward Voltage (1) VSD Reverse Recovery Time (1) trr Peak Reverse Recovery Current Reverse Recovery Charge IS = 25A, VGS = 0V (1) IRRM (1) IF = 40A, di/dt = 100A/µs Qrr Note: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% (2) Pulse width limited by maximum junction temperature Switching Test Circuit ton RD VIN VOUT D Switching Waveforms td(on) RG toff tr td(off) tf 90 % 90% Output, VOUT VGEN A 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GFB65N02 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 80 70 4.0V 3.5V 40 3.0V 20 50 40 30 TJ = 125°C 20 25°C --55°C 10 2.5V 0 VGS(th) -- Gate-to-Source Threshold Voltage (V) (Normalized) ID -- Drain Current (A) 60 0 0 1 2 3 4 5 1 2 3 4 VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage vs. Temperature Fig. 4 – On-Resistance vs. Drain Current 1.2 0.02 ID = 250µA 1.1 1 0.9 0.8 0.7 0.6 0.5 --50 0.015 0.01 VGS = 4.5V VGS = 10.0V 0.005 0 --25 0 25 50 75 100 125 0 150 20 40 60 80 TJ -- Junction Temperature (°C) ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature Fig. 6 – On-Resistance vs. Gate-to-Source Voltage 1.6 0.05 VGS = 10V ID = 32A ID = 32A RDS(ON) -- On-Resistance (Ω) RDS(ON) -- On-Resistance (Normalized) 5 VDS -- Drain-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID -- Drain-to-Source Current (A) VDS = 10V 60 VGS = 4.5V, 5.0V, 6.0V, 10.0 V 1.4 1.2 1 0.04 0.03 0.02 TJ = 125°C 0.01 TJ = 25°C 0.8 --50 0 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 125 150 2 4 6 8 VGS -- Gate-to-Source Voltage (V) 10 GFB65N02 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 7 – Gate Charge Fig. 8 – Capacitance 3000 VDS = 10V ID = 32A f = 1MHZ VGS = 0V 2500 8 C -- Capacitance (pF) VGS -- Gate-to-Source Voltage (V) 10 6 4 2 Ciss 2000 1500 1000 Coss 500 Crss 0 0 0 10 20 30 40 0 5 Qg -- Charge (nC) Fig. 9 – Source-Drain Diode Forward Voltage VGS = 0V 20 D = 0.5 RΘJA (norm) -- Normalized Thermal Impedance IS -- Source Current (A) 15 Fig. 10 – Thermal Impedance 1 100 TJ = 125°C 10 25°C --55°C 0.2 PDM 0.1 0.1 0.05 t1 0.02, Single Pulse t2 1. Duty Cycle, D = t1/t2 2. RθJC (t) = RθJC(norm) *RθJC 3. RθJC = 2.2°C/W 4. TJ - TC = PDM * RθJC(t) 0.01 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.0001 0.001 0.01 0.1 1 10 Pulse Duration (sec.) VSD -- Source-to-Drain Voltage (V) Fig. 11 – Power vs. Pulse Duration Fig. 12 – Maximum Safe Operating Area 1000 1000 Single Pulse RθJC = 2.2°C/W TC = 25°C ID -- Drain Current (A) 800 Power (W) 10 VDS -- Drain-to-Source Voltage (V) 600 400 N) 0.001 0.01 0.1 Pulse Duration (sec.) 1 10 1m 10 RD s m 10 1 0.0001 Lim O S( 200 0 10 0µ s it 100 s 100ms VGS = 10V Single Pulse RθJC = 2.2 ¡C/W TC = 25°C 0.1 DC 1 10 VDS -- Drain-Source Voltage (V) 100