GFD50N03A N-Channel Enhancement-Mode MOSFET VDS 30V RDS(ON) 7mΩ ID 78A H C N TREENFET D ® G TO-252 (DPAK) 0.265 (6.73) 0.255 (6.48) 0.094 (2.39) 0.087 (2.21) t c u rod P New G S 0.214 (5.44) 0.206 (5.23) 0.023 (0.58) 0.018 (0.46) 0.190 (4.826) D 0.050 (1.27) 0.035 (0.89) 0.165 (4.191) 0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) G S 0.035 (0.89) 0.028 (0.71) 0.410 (10.41) 0.380 (9.65) 0.060 (1.52) 0.045 (1.14) 0.100 (2.54) 0.197 (5.00) 0.177 (4.49) 0.118 (3.0) 0.040 (1.02) 0.025 (0.64) 0.204 (5.18) 0.156 (3.96) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03) 0.243 (6.172) Dimensions in inches and (millimeters) 0.063 (1.6) Mounting Pad Layout Mechanical Data Features Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.4g • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter C = 25°C unless otherwise noted) Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 ID 78 IDM 180 PD 70 45 W TJ, Tstg –55 to 150 °C RθJC 1.8 °C/W RθJA 40 °C/W Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 70°C Operating Junction and Storage Temperature Range Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (2) Notes: (1) Maximum DC current limited by the package (2) 1-in2 2oz. Cu PCB mounted Unit V A 5/1/01 GFD50N03A N-Channel Enhancement-Mode MOSFET Electrical Characteristics (T J Parameter = 25°C unless otherwise noted) Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 30 — — V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 — 3.0 V IGSS VDS = 0V, VGS = ±20V — — ±100 nA IDSS VDS = 30V, VGS = 0V — — 1.0 µA ID(on) VDS ≥ 5V, VGS = 10V 50 — — A VGS = 10V, ID = 15A — 6.2 7 VGS = 4.5V, ID = 13A — 8.5 10 VDS = 15V, ID = 15A — 50 — VDS=15V, VGS=5V, ID=15A — 31 43 — 60 84 — 9 — — 8.5 — — 13 26 — 16 29 — 94 132 — 38 57 VGS = 0V — 3240 — Static Gate-Body Leakage Zero Gate Voltage Drain Current (1) On-State Drain Current Drain-Source On-State Resistance(1) RDS(on) Forward Transconductance(1) gfs mΩ S Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDS = 15V, VGS = 10V ID = 15A VDD = 15V, RL = 15Ω ID ≅ 1A, VGEN = 10V RG = 6Ω nC ns Turn-Off Fall Time tf Input Capacitance Ciss Output Capacitance Coss VDS = 15V — 625 — Crss f = 1.0MHZ — 285 — IS — — — 20 A VSD IS = 20A, VGS = 0V — 0.85 1.3 V Reverse Transfer Capacitance pF Source-Drain Diode Max Diode Forward Current (1) Diode Forward Voltage Notes: (1) Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2% VDD ton Switching Test Circuit RD VIN VOUT D Switching Waveforms td(on) RG tr td(off) tf 90 % 90% Output, VOUT VGEN toff 10% 10% INVERTED DUT G 90% 50% S Input, VIN 50% 10% PULSE WIDTH GFD50N03A N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 2 – Transfer Characteristics Fig. 1 – Output Characteristics 10V 70 6.0V 4.5V 60 4.0V 80 VDS = 10V 70 5.0V ID -- Drain Current (A) ID -- Drain-to-Source Current (A) 80 3.5V 50 40 30 3.0V 20 10 60 50 TJ = 125°C 40 30 --55°C 20 25°C 10 VGS = 2.5V 0 0 0 1 2 3 4 1 2 3 4 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 – Threshold Voltage Fig. 4 – On-Resistance vs. Drain Current 2 5 0.015 1.8 RDS(ON) -- On-Resistance (Ω) V(th) -- Gate-to-Source Threshold Voltage (V) ID = 250µA 1.6 1.4 1.2 1 0.8 0.6 --50 0 25 50 75 100 125 150 0.0075 VGS = 10V 0.005 0.0025 1.6 VGS = 10V ID = 15A 1.4 1.2 1 0.8 --25 0 25 50 75 100 TJ -- Junction Temperature (°C) 0 10 20 30 40 50 ID -- Drain Current (A) Fig. 5 – On-Resistance vs. Junction Temperature RDS(ON) -- On-Resistance (Normalized) VGS = 4.5V 0.01 0 --25 TJ -- Junction Temperature (°C) 0.6 --50 0.0125 125 150 60 70 80 GFD50N03A N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 6 – On-Resistance vs. Gate-to-Source Voltage Fig. 7 – Gate Charge 0.03 10 VDS = 15V ID = 15A VGS -- Gate-to-Source Voltage (V) RDS(ON) -- On-Resistance (Ω) ID = 15A 0.025 0.02 0.015 TJ = 125°C 0.01 0.005 25°C 0 8 6 4 2 0 2 4 6 8 10 0 10 VGS -- Gate-to-Source Voltage (V) 30 40 50 60 Fig. 9 – Source-Drain Diode Forward Voltage Fig. 8 – Capacitance 100 4000 3500 VGS = 0V f = 1MHZ VGS = 0V Ciss 3000 IS -- Source Current (A) C -- Capacitance (pF) 20 Qg -- Gate Charge (nC) 2500 2000 1500 1000 10 TJ = 125°C 1 25°C 0.1 --55°C Coss 500 0 Crss 0.01 0 5 10 15 20 VDS -- Drain-to-Source Voltage (V) 25 30 0 0.2 0.4 0.6 0.8 1 VSD -- Source-to-Drain Voltage (V) 1.2 1.4 GFD50N03A N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Fig. 10 – Breakdown Voltage vs. Junction Temperature Fig. 11 – Transient Thermal Impedance ID = 250µA 42 41 40 39 38 37 36 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) Fig. 12 – Power vs. Pulse Duration Fig. 13 – Maximum Safe Operating Area 1000 1000 800 ID -- Drain Current (A) BVDSS -- Breakdown Voltage (V) 43 600 400 10 1m 0.001 0.01 0.1 1 10 s 10 m 10 RDS(ON) Limit s DC VGS = 10V Single Pulse RθJC = 1.8°C/W TA = 25°C 200 0 0.0001 0µ s 100 1 0.1 1 10 VDS -- Drain-Source Voltage (V) 100