ETC HM5165400J-6

HM5164400 Series
HM5165400 Series
64 M FP DRAM (16-Mword × 4-bit)
8 k Refresh/4 k Refresh
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ADE-203-812B (Z)
Rev. 1.0
Feb. 27, 1998
Description
The Hitachi HM5164400 Series, HM5165400 Series are 64M-bit dynamic RAMs organized as 16,777,216word × 4-bit. They have realized high performance and low power by employing CMOS process
technology. The HM5164400 Series, HM5165400 Series offer Fast Page Mode as a high speed access
mode. They have the package variations of standard 32-pin plastic SOJ and standard 32-pin plastic TSOPII.
Features
• Single 3.3 V supply: 3.3 V ± 0.3 V
• Access time: 50 ns/60 ns (max)
• Power dissipation
 Active: 396 mW/360 mW (max) (HM5164400 Series)
: 468 mW/396 mW (max) (HM5165400 Series)
 Standby : 1.8 mW (max) (CMOS interface)
: 0.54 mW (max) (L-version)
• Fast page mode capability
• Refresh cycles
 5$6-only refresh
8192 cycles
/64 ms (HM5164400)
/128 ms (HM5164400L) (L-version)
4096 cycles
/64 ms (HM5165400)
/128 ms (HM5165400L) (L-version)
 CBR/Hidden refresh
4096 cycles
/64 ms (HM5164400, HM5165400)
/128 ms (HM5164400L, HM5165400L) (L-version)
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HM5164400 Series, HM5165400 Series
• 4 variations of refresh
 5$6-only refresh
 &$6-before-5$6 refresh
 Hidden refresh
 Self refresh (L-version)
• Battery backup operation (L-version)
Ordering Information
Type No.
Access time
Package
HM5164400J-5
HM5164400J-6
50 ns
60 ns
400-mil 32-pin plastic SOJ
(CP-32DC)
HM5164400LJ-5
HM5164400LJ-6
50 ns
60 ns
HM5165400J-5
HM5165400J-6
50 ns
60 ns
HM5165400LJ-5
HM5165400LJ-6
50 ns
60 ns
HM5164400TT-5
HM5164400TT-6
50 ns
60 ns
HM5164400LTT-5
HM5164400LTT-6
50 ns
60 ns
HM5165400TT-5
HM5165400TT-6
50 ns
60 ns
HM5165400LTT-5
HM5165400LTT-6
50 ns
60 ns
2
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400-mil 32-pin plastic TSOP II
(TTP-32DC)
HM5164400 Series, HM5165400 Series
Pin Arrangement (HM5164400 Series)
32-pin SOJ
32-pin TSOP
VCC
1
32
V SS
VCC
1
32
V SS
I/O0
2
31
I/O3
I/O0
2
31
I/O3
I/O1
3
30
I/O2
I/O1
3
30
I/O2
NC
4
29
NC
NC
4
29
NC
NC
5
28
NC
NC
5
28
NC
NC
6
27
NC
NC
6
27
NC
NC
7
26
CAS
NC
7
26
CAS
WE
8
25
OE
WE
8
25
OE
RAS
9
24
A12
RAS
9
24
A12
A0
10
23
A11
A0
10
23
A11
A1
11
22
A10
A1
11
22
A10
A2
12
21
A9
A2
12
21
A9
A3
13
20
A8
A3
13
20
A8
A4
14
19
A7
A4
14
19
A7
A5
15
18
A6
A5
15
18
A6
VCC
16
17
V SS
VCC
16
17
V SS
(Top view)
(Top view)
Pin Description
Pin name
Function
A0 to A12
Address input
I/O0 to I/O3
5$6
&$6
:(
2(
•
Row/Refresh address A0 to A12
•
Column address
A0 to A10
Data input/output
Row address strobe
Column address strobe
Write enable
Output enable
VCC
Power supply
VSS
Ground
NC
No connection
3
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HM5164400 Series, HM5165400 Series
Pin Arrangement (HM5165400 Series)
32-pin SOJ
32-pin TSOP
VCC
1
32
V SS
VCC
1
32
V SS
I/O0
2
31
I/O3
I/O0
2
31
I/O3
I/O1
3
30
I/O2
I/O1
3
30
I/O2
NC
4
29
NC
NC
4
29
NC
NC
5
28
NC
NC
5
28
NC
NC
6
27
NC
NC
6
27
NC
NC
7
26
CAS
NC
7
26
CAS
WE
8
25
OE
WE
8
25
OE
RAS
9
24
NC
RAS
9
24
NC
A0
10
23
A11
A0
10
23
A11
A1
11
22
A10
A1
11
22
A10
A2
12
21
A9
A2
12
21
A9
A3
13
20
A8
A3
13
20
A8
A4
14
19
A7
A4
14
19
A7
A5
15
18
A6
A5
15
18
A6
VCC
16
17
V SS
VCC
16
17
V SS
(Top view)
(Top view)
Pin Description
Pin name
Function
A0 to A11
Address input
I/O0 to I/O3
5$6
&$6
:(
2(
•
Row/Refresh address A0 to A11
•
Column address
Data input/output
Row address strobe
Column address strobe
Write enable
Output enable
VCC
Power supply
VSS
Ground
NC
No connection
4
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A0 to A11
HM5164400 Series, HM5165400 Series
Block Diagram (HM5164400 Series)
RAS
CAS
WE
OE
Timing and control
A0
Column decoder
A1
to
Column
•
•
•
16M array
address
buffers
A10
•
•
•
Row
Row decoder
16M array
I/O buffers
16M array
I/O0
to
I/O3
address
buffers
16M array
A11
A12
5
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HM5164400 Series, HM5165400 Series
Block Diagram (HM5165400 Series)
RAS
CAS
WE
OE
Timing and control
Column decoder
A0
Column
A1
to
•
•
•
16M array
address
buffers
A11
•
•
•
Row
Row decoder
16M array
I/O buffers
16M array
address
buffers
6
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16M array
I/O0
to
I/O3
HM5164400 Series, HM5165400 Series
Operation Table
5$6
&$6
:(
2(
I/O 0 to I/O 3
Operation
H
×
×
×
High-Z
Standby
L
L
H
L
L
L
Dout
Read cycle
L*
2
×
Din
Early write cycle
2
H
Din
Delayed write cycle
Read-modify-write cycle
L
L
L*
L
L
H to L
L to H
Dout/Din
L
H
×
×
High-Z
H to L
L
H
×
High-Z
5$6-only refresh cycle
&$6-before-5$6 refresh cycle or
Self refresh cycle (L-version)
L
L
H
H
High-Z
Read cycle (Output disabled)
Notes: 1. H: VIH (inactive), L: VIL (active), ×: VIH or VIL
2. tWCS ≥ 0 ns: Early write cycle
tWCS < 0 ns: Delayed write cycle
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Terminal voltage on any pin relative to VSS
VT
–0.5 to VCC + 0.5 (≤ 4.6 V (max))
V
Power supply voltage relative to VSS
VCC
–0.5 to +4.6
V
Short circuit output current
Iout
50
mA
Power dissipation
PT
1.0
W
Storage temperature
Tstg
–55 to +125
°C
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Supply voltage
VCC
3.0
3.3
3.6
V
1, 2
VSS
0
0
0
V
2
Input high voltage
VIH
2.0
—
VCC + 0.3
V
1
Input low voltage
VIL
–0.3
—
0.8
V
1
Ambient temperature range
Ta
0
—
70
_C
Notes: 1. All voltage referred to VSS.
2. The supply voltage with all VCC pins must be on the same level. The supply voltage with all VSS
pins must be on the same level.
7
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HM5164400 Series, HM5165400 Series
DC Characteristics (HM5164400 Series)
HM5164400
-5
Parameter
1,
Operating current* *
2
Standby current
Standby current
(L-version)
-6
Symbol Min
Max
Min
Max
Unit
Test conditions
ICC1
—
110
—
100
mA
tRC = min
ICC2
—
2
—
2
mA
TTL interface
5$6, &$6 = VIH
Dout = High-Z
—
0.5
—
0.5
mA
CMOS interface
5$6, &$6 ≥ VCC – 0.2 V
Dout = High-Z
—
150
—
150
µA
ICC2
CMOS interface
5$6, &$6 ≥ V
CC
– 0.2 V
Dout = High-Z
5$6-only refresh current*
2
1
Standby current*
ICC3
—
110
—
100
mA
tRC = min
ICC5
—
5
—
5
mA
5$6 = V , &$6 = V
IH
IL
Dout = enable
&$6-before-5$6 refresh
current
ICC6
—
110
—
100
mA
tRC = min
ICC7
—
90
—
80
mA
5$6 = VIL , &$6 cycle,
tPC = tPC min
Battery backup current*
(Standby with CBR refresh)
(L-version)
ICC10
—
500
—
500
µA
Self refresh mode current
(L-version)
ICC11
—
400
—
400
µA
Input leakage current
ILI
–5
5
–5
5
µA
0 V ≤ Vin ≤ VCC + 0.3 V
Output leakage current
ILO
–5
5
–5
5
µA
0 V ≤ Vout ≤ VCC
Dout = disable
Output high voltage
VOH
2.4
VCC
2.4
VCC
V
High Iout = –2 mA
Output low voltage
VOL
0
0.4
0
0.4
V
Low Iout = 2 mA
1,
Fast page mode current* *
4
3
CMOS interface
Dout = High-Z
CBR refresh: tRC = 31.3 µs
tRAS ≤ 0.3 µs
CMOS interface
5$6, &$6 ≤ 0.2 V
Dout = High-Z
Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the
output open condition.
2. Address can be changed once or less while 5$6 = VIL.
3. Measured with one sequential address change per fast page mode cycle, tPC.
4. VIH ≥ VCC – 0.2 V, 0 V ≤ VIL ≤ 0.2 V.
8
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HM5164400 Series, HM5165400 Series
DC Characteristics (HM5165400 Series)
HM5165400
-5
Parameter
1,
Operating current* *
2
Standby current
Standby current
(L-version)
-6
Symbol Min
Max
Min
Max
Unit
Test conditions
ICC1
—
130
—
110
mA
tRC = min
ICC2
—
2
—
2
mA
TTL interface
5$6, &$6 = VIH
Dout = High-Z
—
0.5
—
0.5
mA
CMOS interface
5$6, &$6 ≥ VCC – 0.2 V
Dout = High-Z
—
150
—
150
µA
ICC2
CMOS interface
5$6, &$6 ≥ V
CC
– 0.2 V
Dout = High-Z
5$6-only refresh current*
2
1
Standby current*
ICC3
—
130
—
110
mA
tRC = min
ICC5
—
5
—
5
mA
5$6 = V , &$6 = V
IH
IL
Dout = enable
&$6-before-5$6 refresh
current
ICC6
—
130
—
110
mA
tRC = min
ICC7
—
90
—
80
mA
5$6 = VIL , &$6 cycle,
tPC = tPC min
Battery backup current*
(Standby with CBR refresh)
(L-version)
ICC10
—
500
—
500
µA
Self refresh mode current
(L-version)
ICC11
—
400
—
400
µA
Input leakage current
ILI
–5
5
–5
5
µA
0 V ≤ Vin ≤ VCC + 0.3 V
Output leakage current
ILO
–5
5
–5
5
µA
0 V ≤ Vout ≤ VCC
Dout = disable
Output high voltage
VOH
2.4
VCC
2.4
VCC
V
High Iout = –2 mA
Output low voltage
VOL
0
0.4
0
0.4
V
Low Iout = 2 mA
1,
Fast page mode current* *
4
3
CMOS interface
Dout = High-Z
CBR refresh: tRC = 31.3 µs
tRAS ≤ 0.3 µs
CMOS interface
5$6, &$6 ≤ 0.2 V
Dout = High-Z
Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the
output open condition.
2. Address can be changed once or less while 5$6 = VIL.
3. Measured with one sequential address change per fast page mode cycle, tPC.
4. VIH ≥ VCC – 0.2 V, 0 V ≤ VIL ≤ 0.2 V.
9
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HM5164400 Series, HM5165400 Series
Capacitance (Ta = 25°C, VCC = 3.3 V ± 0.3 V)
Parameter
Symbol
Typ
Max
Unit
Notes
Input capacitance (Address)
CI1
—
5
pF
1
Input capacitance (Clocks)
CI2
—
7
pF
1
Output capacitance (Data-in, Data-out)
CI/O
—
7
pF
1, 2
Notes : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. 5$6, &$6 = VIH to disable Dout.
10
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HM5164400 Series, HM5165400 Series
AC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V) *1, *2, *19
Test Conditions
•
•
•
•
Input rise and fall time: 5 ns
Input timing reference levels: 0.8 V, 2.0 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + CL (100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
HM5164400/HM5165400
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Random read or write cycle time
tRC
90
—
110
—
ns
tRP
30
—
40
—
ns
tCP
8
—
10
—
ns
tRAS
50
10000
60
10000
ns
tCAS
13
10000
15
10000
ns
Row address setup time
tASR
0
—
0
—
ns
Row address hold time
tRAH
8
—
10
—
ns
Column address setup time
tASC
0
—
0
—
ns
Column address hold time
tCAH
8
—
10
—
ns
tRCD
18
37
20
45
ns
3
tRAD
13
25
15
30
ns
4
tRSH
13
—
15
—
ns
tCSH
50
—
60
—
ns
tCRP
5
—
5
—
ns
tOED
13
—
15
—
ns
5
tDZO
0
—
0
—
ns
6
tDZC
0
—
0
—
ns
6
tT
3
50
3
50
ns
7
5$6 precharge time
&$6 precharge time
5$6 pulse width
&$6 pulse width
5$6 to &$6 delay time
5$6 to column address delay time
5$6 hold time
&$6 hold time
&$6 to 5$6 precharge time
2( to Din delay time
2( delay time from Din
&$6 delay time from Din
Transition time (rise and fall)
Notes
11
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HM5164400 Series, HM5165400 Series
Read Cycle
HM5164400/HM5165400
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Access time from 5$6
tRAC
—
50
—
60
ns
8, 9
Access time from &$6
tCAC
—
13
—
15
ns
9, 10, 17
Access time from address
tAA
—
25
—
30
ns
9, 11, 17
Access time from 2(
tOEA
—
13
—
15
ns
9
Read command setup time
tRCS
0
—
0
—
ns
Read command hold time to &$6
tRCH
0
—
0
—
ns
12
Read command hold time to 5$6
tRRH
0
—
0
—
ns
12
Column address to 5$6 lead time
tRAL
25
—
30
—
ns
Column address to &$6 lead time
tCAL
25
—
30
—
ns
&$6 to output in low-Z
tCLZ
0
—
0
—
ns
Output data hold time
tOH
3
—
3
—
ns
Output data hold time from 2(
tOHO
3
—
3
—
ns
Output buffer turn-off time
tOFF
—
13
—
15
ns
13
Output buffer turn-off to 2(
tOEZ
—
13
—
15
ns
13
&$6 to Din delay time
tCDD
13
—
15
—
ns
5
Write Cycle
HM5164400/HM5165400
-5
Parameter
-6
Symbol
Min
Max
Min
Max
Unit
Notes
Write command setup time
tWCS
0
—
0
—
ns
14
Write command hold time
tWCH
8
—
10
—
ns
Write command pulse width
tWP
8
—
10
—
ns
Write command to 5$6 lead time
tRWL
13
—
15
—
ns
Write command to &$6 lead time
tCWL
13
—
15
—
ns
Data-in setup time
tDS
0
—
0
—
ns
15
Data-in hold time
tDH
8
—
10
—
ns
15
12
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HM5164400 Series, HM5165400 Series
Read-Modify-Write Cycle
HM5164400/HM5165400
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Read-modify-write cycle time
tRWC
131
—
155
—
ns
tRWD
73
—
85
—
ns
14
tCWD
36
—
40
—
ns
14
tAWD
48
—
55
—
ns
14
tOEH
13
—
15
—
ns
5$6 to :( delay time
&$6 to :( delay time
Column address to :( delay time
2( hold time from :(
Notes
Refresh Cycle
HM5164400/HM5165400
-5
Parameter
&$6 setup time (CBR refresh cycle)
&$6 hold time (CBR refresh cycle)
:( setup time (CBR refresh cycle)
:( hold time (CBR refresh cycle)
5$6 precharge to &$6 hold time
-6
Symbol
Min
Max
Min
Max
Unit
tCSR
5
—
5
—
ns
tCHR
8
—
10
—
ns
tWRP
0
—
0
—
ns
tWRH
8
—
10
—
ns
tRPC
5
—
5
—
ns
Notes
Fast Page Mode Cycle
HM5164400/HM5165400
-5
-6
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Fast page mode cycle time
tPC
35
—
40
—
ns
Fast page mode 5$6 pulse width
tRASP
—
100000 —
100000 ns
16
Access time from &$6 precharge
tCPA
—
30
—
35
ns
9, 17
5$6 hold time from &$6 precharge
tCPRH
30
—
35
—
ns
13
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HM5164400 Series, HM5165400 Series
Fast Page Mode Read-Modify-Write Cycle
HM5164400/HM5165400
-5
Parameter
Symbol
Fast page mode read-modify-write cycle tPRWC
time
:( delay time from &$6 precharge
tCPW
-6
Min
Max
Min
Max
Unit
76
—
85
—
ns
53
—
60
—
ns
Notes
14
Refresh (HM5164400 Series)
Parameter
Symbol
Max
Unit
Note
Refresh period
tREF
64
ms
8192 cycles
Refresh period (L-version)
tREF
128
ms
8192 cycles
Parameter
Symbol
Max
Unit
Note
Refresh period
tREF
64
ms
4096 cycles
Refresh period (L-version)
tREF
128
ms
4096 cycles
Refresh (HM5165400 Series)
Self Refresh Mode (L-version)
HM5164400L/HM5165400L
-5
Parameter
5$6 pulse width (Self refresh)
5$6 precharge time (Self refresh)
&$6 hold time (Self refresh)
-6
Symbol
Min
Max
Min
Max
Unit
Notes
tRASS
100
—
100
—
µs
23
tRPS
90
—
110
—
ns
23
tCHS
–50
—
–50
—
ns
Notes: 1. AC measurements assume tT = 5 ns.
2. An initial pause of 200 µs is required after power up followed by a minimum of eight initialization
cycles (any combination of cycles containing 5$6-only refresh or &$6-before-5$6 refresh).
3. Operation with the tRCD (max) limit insures that tRAC (max) can be met, tRCD (max) is specified as a
reference point only; if tRCD is greater than the specified tRCD (max) limit, then access time is
controlled exclusively by tCAC.
4. Operation with the tRAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a
reference point only; if tRAD is greater than the specified tRAD (max) limit, then access time is
controlled exclusively by tAA.
14
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HM5164400 Series, HM5165400 Series
5. Either tOED or tCDD must be satisfied.
6. Either tDZO or tDZC must be satisfied.
7. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Also, transition
times are measured between VIH (min) and VIL (max).
8. Assumes that tRCD ≤ tRCD (max) and tRAD ≤ tRAD (max). If tRCD or tRAD is greater than the maximum
recommended value shown in this table, tRAC exceeds the value shown.
9. Measured with a load circuit equivalent to 1 TTL loads and 100 pF.
10. Assumes that tRCD ≥ tRCD (max) and tRCD + tCAC (max) ≥ tRAD + tAA (max).
11. Assumes that tRAD ≥ tRAD (max) and tRCD + tCAC (max) ≤ tRAD + tAA (max).
12. Either tRCH or tRRH must be satisfied for a read cycles.
13. tOFF (max) and tOEZ (max) define the time at which the outputs achieve the open circuit condition
and are not referred to output voltage levels.
14. tWCS, tRWD, tCWD, tAWD and tCPW are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only; if tWCS ≥ tWCS (min), the cycle is an early write cycle and the
data out pin will remain open circuit (high impedance) throughout the entire cycle; if tRWD ≥ tRWD
(min), tCWD ≥ tCWD (min), and tAWD ≥ tAWD (min), or tCWD ≥ tCWD (min), tAWD ≥ tAWD (min) and tCPW ≥ tCPW
(min), the cycle is a read-modify-write and the data output will contain data read from the selected
cell; if neither of the above sets of conditions is satisfied, the condition of the data out (at access
time) is indeterminate.
15. tDS, tDH are referred to &$6 leading edge in early write cycles and to :( leading edge in delayed
write or read-modify-write cycles.
16. tRASP defines 5$6 pulse width in fast page mode cycles.
17. Access time is determined by the longest among tAA, tCAC and tCPA.
18. In delayed write or read-modify-write cycles, 2( must disable output buffer prior to applying data
to the device.
19. When output buffers are enabled once, sustain the low impedance state until valid data is
obtained. When output buffer is turned on and off within a very short time, generally it causes
large VCC/VSS line noise, which causes to degrade VIH min/VIL max level.
20. Before and after self refresh mode, execute CBR refresh to all refresh addresses in or within 64
ms period on the condition a and b below.
a. Enter self refresh mode within 15.6 µs after either burst refresh or distributed refresh at equal
interval to all refresh addresses are completed.
b. Start burst refresh or distributed refresh at equal interval to all refresh addresses within
15.6µs after exiting from self refresh mode.
21. In case of entering from 5$6-only-refresh, it is necessary to execute CBR refresh before and
after self refresh mode according as note 20.
22. For L-version, it is available to apply each 128 ms and 31.2 µs instead of 64 ms and 15.6 µs at
note 20.
23 At tRASS > 100 µs, self refresh mode is activated, and not activated at t RASS < 10 µs. It is undefined
within the range of 10 µs ≤ tRASS ≤ 100 µs. For tRASS ≥ 10 µs, it is necessary to satisfy tRPS.
24. XXX: H or L (H: VIH (min) ≤ VIN ≤ VIH (max), L: VIL (min) ≤ VIN ≤ VIL (max))
///////: Invalid Dout
When the address, clock and input pins are not described on timing waveforms, their pins must
be applied VIH or VIL.
15
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HM5164400 Series, HM5165400 Series
Timing Waveforms*24
Read Cycle
tRC
tRAS
tRP
RAS
tCRP
tCSH
tRCD
tRSH
tCAS
tT
CAS
tRAD
tASR
Address
tRAH
tRAL
tCAL
tASC
Row
tCAH
Column
tRRH
tRCS
tRCH
WE
tDZC
tCDD
High-Z
Din
tDZO
tOEA
tOED
OE
tOEZ
tOHO
tCAC
tAA
tRAC
tCLZ
Dout
16
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tOFF
tOH
Dout
HM5164400 Series, HM5165400 Series
Early Write Cycle
tRC
tRP
tRAS
RAS
tCSH
tCRP
tRCD
tRSH
tCAS
tT
CAS
tASR
Address
tRAH
Row
tASC
tCAH
Column
tWCS
tWCH
WE
tDS
Din
Dout
tDH
Din
High-Z*
* t WCS
t WCS (min)
17
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HM5164400 Series, HM5165400 Series
18
Delayed Write Cycle*
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRCD
tRSH
tCAS
tT
CAS
tASR
Address
tRAH
tASC
Row
tCAH
Column
tCWL
tRWL
tWP
tRCS
WE
tDS
tDZC
High-Z
Din
Din
tOED
tDZO
tDH
tOEH
OE
tOEZ
tCLZ
High-Z
Dout
Invalid Dout
18
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HM5164400 Series, HM5165400 Series
Read-Modify-Write Cycle*
18
tRWC
tRAS
tRP
RAS
tT
tRCD
tCAS
tCRP
CAS
tRAD
tASR
Address
tASC
tRAH
Row
tCAH
Column
tCWL
tCWD
tRCS
tRWL
tWP
tAWD
tRWD
WE
tDZC
tDS
High-Z
Din
Din
tDH
tOED
tDZO
tOEH
tOEA
OE
tCAC
tAA
tOEZ
tRAC
tOHO
Dout
Dout
High-Z
tCLZ
19
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HM5164400 Series, HM5165400 Series
5$6-Only Refresh Cycle
t RC
t RAS
t RP
RAS
tT
t CRP
t RPC
CAS
t ASR
Address
t RAH
Row
t OFF
Dout
20
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High-Z
t CRP
HM5164400 Series, HM5165400 Series
&$6-Before-5$6 Refresh Cycle
t RC
t RP
t RAS
t RC
t RP
t RAS
t RP
RAS
tT
t RPC
t CP
t CSR
t CHR
t RPC
t CP
t CRP
t CSR
t CHR
CAS
t WRP t WRH
t WRP
t WRH
WE
Address
t OFF
High-Z
Dout
21
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HM5164400 Series, HM5165400 Series
Hidden Refresh Cycle
t RC
t RAS
t RP
t RC
t RAS
t RC
t RP
t RAS
t RP
RAS
tT
t RSH
t CHR
t CRP
t RCD
CAS
t RAD
t ASR t RAH
Address
t RAL
t ASC
Row
t CAH
Column
t RRH
t RCH
t RCS
WE
t DZC
t CDD
High-Z
Din
t DZO
t OED
t OEA
OE
t CAC
t OEZ
t OHO
t AA
t RAC
t OFF
t OH
t CLZ
Dout
22
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Dout
HM5164400 Series, HM5165400 Series
Fast Page Mode Read Cycle
t RASP
t CPRH
t RP
RAS
tT
t CSH
t RCD
t PC
t CAS
t CP
t RSH
t CAS
t CP
t CRP
t CAS
CAS
t RAL
t RAD
t ASR t RAH
Address
Row
t CAL
t ASC t CAH
t CAL
t ASC t CAH
t ASC t CAH
Column 1
Column 2
Column N
t CAL
t RCS
tRCS
tRCH
t RCS
t RRH
t RCH
tRCH
WE
t DZC
Din
t DZO
t DZC
t DZC
t CDD
t CDD
High-Z
High-Z
t OED
t DZO t OED
t CDD
High-Z
t DZO
t OED
OE
t RAC
t AA
t OH
t OEA
t OHO
t OH
t OEA
t OFF t CAC
t OEZ t CLZ
t CAC
t CLZ
Dout
t CPA
t AA
Dout 1
t CPA
t AA
t OHO
t OFF
t OEZ
Dout 2
t OH
t OHO
t OEA
t CAC
t CLZ
t OFF
t OEZ
Dout N
23
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HM5164400 Series, HM5165400 Series
Fast Page Mode Early Write Cycle
t RP
t RASP
RAS
tT
t CSH
t RCD
t CAS
t PC
t CP
t CAS
t CP
t RSH
t CAS
t CRP
CAS
t ASR t RAH
Address
Row
t ASC t CAH
t ASC t CAH
t ASC t CAH
Column 1
Column 2
Column N
t WCS
t WCH
t WCS
t WCH
t WCS
t WCH
WE
t DS
Din
t DH
Din 1
Dout
t DS
t DH
Din 2
t DS
t DH
Din N
High-Z*
* t WCS
24
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t WCS (min)
HM5164400 Series, HM5165400 Series
18
Fast Page Mode Delayed Write Cycle*
t RASP
t RP
RAS
tT
t CP
t CSH
t CRP
t CP
t PC
t RCD
t CAS
t RSH
t CAS
t CAS
CAS
t RAD
t ASR
t ASC
t RAH
Address
t ASC
t CAH
Row
t ASC
t CAH
Column 1
t CAH
Column 2
t CWL
Column N
t CWL
t CWL
t RWL
t RCS
t RCS
t RCS
WE
t WP
t WP
t WP
t DZC t DS
t DZC t DS
t DZC t DS
t DH
t DH
Din
1
Din
Din
2
t DZO
Din
N
t DZO
t DZO
t DH
t OED
t OED
t OED
t OEH
t OEH
t OEH
OE
t CLZ
t CLZ
t OEZ
t CLZ
t OEZ
t OEZ
High-Z
Dout
Invalid Dout
Invalid Dout
Invalid Dout
25
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HM5164400 Series, HM5165400 Series
Fast Page Mode Read-Modify-Write Cycle*
18
t RASP
t RP
RAS
tT
t PRWC
t CP
t RCD
t RSH
t CP
t CAS
t CAS
t CRP
t CAS
CAS
t ASR
t RAD
t ASC
t RAH
Address
t ASC
t CAH
t CAH
Column 1
Row
t ASC
t CAH
Column 2
t RWD
t CWL
t AWD
t CPW
t CWL
t AWD
t RCS
t CWD
Column N
t CPW
t AWD
t RCS
t CWD
t CWL
t RWL
t CWD
WE
t RCS
t WP
t WP
t DZC t DS
t WP
t DZC t DS
t DZC t DS
t DH
t DH
Din
1
Din
t DZO
t OED
t DH
Din
2
t OED
t DZO
t OED
t DZO
t OEH
t OEH
t OEH
Din
N
OE
t OHO
t OEA
t CAC
t OHO
t OEA
t CAC
t AA
t OEA
t CAC
t AA
t CPA
t RAC
t OEZ
t CLZ
t OHO
t AA
t CPA
t OEZ
t CLZ
t OEZ
t CLZ
High-Z
Dout
Dout 1
26
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Dout 2
Dout N
HM5164400 Series, HM5165400 Series
Self Refresh Cycle (L-version)*
20, 21, 22, 23
t RASS
t RP
t RPS
RAS
tT
t RPC
t CP
t CRP
t CSR
t CHS
CAS
t WRP
t WRH
WE
t OFF
Dout
High-Z
27
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HM5164400 Series, HM5165400 Series
Package Dimensions
HM5164400J/LJ Series
HM5165400J/LJ Series (CP-32DC)
Unit: mm
3.50 ± 0.26
1.165 Max
0.43 ± 0.10
0.41 ± 0.08
1.27
0.10
Dimension including the plating thickness
Base material dimension
28
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2.55 ± 0.46
16
0.74
0.90 ± 0.26
1
11.18 ± 0.13
17
10.16 ± 0.13
32
20.95
21.38 Max
9.40 ± 0.25
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
CP-32DC
—
Conforms
1.2 g
HM5164400 Series, HM5165400 Series
HM5164400TT/LTT Series
HM5165400TT/LTT Series (TTP-32DC)
Unit: mm
20.95
21.35 Max
17
10.16
32
1.27
0.21
M
0.80
11.76 ± 0.20
0.10
Dimension including the plating thickness
Base material dimension
0.145 ± 0.05
0.125 ± 0.04
1.20 Max
1.15 Max
0° – 5° 0.50 ± 0.10
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
0.68
0.42 ± 0.08
0.40 ± 0.06
16
0.13 ± 0.05
1
TTP-32DC
Conforms
—
0.51 g
29
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HM5164400 Series, HM5165400 Series
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of HitachiÕs sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of HitachiÕs products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
30
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Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071
HM5164400 Series, HM5165400 Series
Revision Record
Rev.
Date
Contents of Modification
Drawn by
Approved by
0.0
Jul. 23, 1997
Initial issue
J. Miyake
M. Saeki
0.1
Nov. 1997
Change of Subtitle
J. Miyake
Y. Takahashi
1.0
Feb. 27, 1998
Deletion of Preliminary
31
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