ETC JANTX2N6033

The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 23 October 1999.
INCH-POUND
MIL-PRF-19500/528A
23 July 1999
SUPERSEDING
MIL-S-19500/528(USAF)
16 September 1977
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,
SILICON, POWER,
TYPES 2N6032 AND 2N6033
JAN, JANTX, AND JANTXV,
This Specification is approved for use by all Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to T0-3).
1.3 Maximum ratings.
Types
2N6032
2N6033
PT 1/
TC = +25°C
RθJC
VCBO
VCEO
VEBO
IB
IC
TOP and TSTG
W
°C/W
V dc
V dc
V dc
A dc
A dc
°C
140
140
1.25
1.25
120
150
90
120
7.0
7.0
10
10
50
40
-65 to +200
-65 to +200
1/ Between TC = +25°C and TC = +200, linear derating factor (average) = 800 mW/°C.
1.4 Primary electrical characteristics at TA = +25°C.
hFE1
Types
2N6032
2N6033
IC = 50 A dc
VCE = 2.6 V dc
Min
Max
10
50
IC = 40 A dc
VCE = 2.0 V dc
Cobo
|hfe|
.1 MHz ≤ f ≤ 1 MHz
IE = 0 A dc
VCB = 10 V dc
pF
f = 5 MHz
IC = 2.0 A dc
VCE = 10 V dc
Min
Max
Min
Max
Min
Max
10
50
-----
1,000
1,000
10
10
40
40
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
Distribution Statement A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/528A
1.4 Primary electrical characteristics at TA = +25°C.
VBE(sat)
switching
VCE(sat)
IC = 50 A dc
IB = 5 A dc
IC = 50 A dc
IB = 5 A dc
IC = 40 A dc
IB = 4 A dc
V dc
V dc
V dc
ton
toff
Type
2N6032
2N6033
(see table I and figure 4)
µs
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
---
2.0
---
1.3
---
-1.0
---
0.5
0.5
---
2.0
2.0
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated
Printing Service, Building 4D (NPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/528A
Dimensions
Ltr
CD
CH
HR
HR1
HT
L1
LD
LL
MHD
MHS
PS
PS1
S
Notes
Inches
Min
Max
.875
.250
.450
.495
.525
.131
.188
.050
.135
.050
.059
.061
.312
--.151
.161
1.177
1.197
.420
.440
.205
.225
.655
.675
Millimeters
Min
Max
22.22
.635
11.43
12.57
13.34
3.33
4.78
1.27
3.43
1.27
1.50
1.55
7.92
--3.84
4.09
29.90
30.40
10.67
11.18
5.21
5.72
16.64
17.14
3
5, 9
5, 9
5
7
4
4, 5
4
Notes:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Body contour is optional within zone defined by CD
4. These dimensions shall be measured at points .050 (1.27 mm) to .055 (1.40 mm) below seating plane. When gauge is not used ,
measurement shall be made at seating plane.
5. Both terminals.
6. At both ends.
7. Two holes.
8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case.
9. LD applies between L1 and LL. Diameter is uncontrolled in L1.
10. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions (similar to T0-3).
3
MIL-PRF-19500/528A
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein.
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500.
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500 and herein.
3.3.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500.
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.4).
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in paragraph 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I.
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV), and as specified
herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein
shall not be acceptable.
Screen (see tableIV
of MIL-PRF-19500)
Measurement
JANTX and JANTXV levels
9
Not applicable
10
24 hours minimum
11
ICEX1 ,hFE1
12
See 4.3.1; 168 hours minimum
13
Subgroup 2 of table I herein;
∆ICEX1 = ±100% of initial value or 3 mA dc, whichever is greater;
∆hFE1 = +25%
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = +187.5°C ±12.5°C, TA ≤ 35°C
JANTX and JANTXV levels
2N6032 -----------------------------------------VCB = 60 V dc.
2N6033 -----------------------------------------VCB = 100 V dc.
4
MIL-PRF-19500/528A
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
tables VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and paragraphs 4.4.2.1 herein. Electrical measurements (end-points) shall
be in accordance with table I, group A, subgroup 2 herein.
4.4.2.1 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
B3
Method
Condition
1037
For solder die attach: VCB ≥ 10 V dc, 2000 cycles, TA ≤ 35°C.
For eutectic die attach: VCB ≥ 10 V dc, TA ≤ 35°C, adjust PT to achieve TJ = 175°C min.
B5
3151
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup
2 herein.
Subgroup
C6
Method
Condition
1037
For solder die attach: VCB ≥ 10 V dc, 6000 cycles, TA ≤ 35°C.
For eutectic die attach: VCB ≥ 10 V dc, TA ≤ 35°C, adjust PT to achieve TJ = 175°C min.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except the output capacitor
shall be omitted.
4.5.3 Coil selection for safe operating area tests. In selecting coils for use in clamped and unclamped inductive SOAR tests, prime
consideration should be given to the recommended commercially available coil. However, due to the extreme critical nature of the coil in
these circuits and wide tolerance of some commercially available coils (+100, -50 percent), it shall be the semiconductor manufacturer's
responsibility, to prove upon request, compliance or equivalency of any coil used (commercial or inplant designed) to be within (+20, -10
percent) of the specified inductance at the rated current and dc resistance.
5
MIL-PRF-19500/528A
TABLE I. Group A inspection .
Inspection
1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
examination
2071
Subgroup 2
Breakdown voltage, collector
to emitter
2N6032
2N6033
----
Breakdown voltage, collector
to emitter
2N6032
2N6033
----
Breakdown voltage, collector
to emitter
2N6032
2N6033
----
Emitter to base cutoff current
3061
Collector to emitter
cutoff Current
3041
Collector to emitter cutoff
Current
2N6032
2N6033
3041
Collector to base cutoff
Current
2N6032
2N6033
3036
Forward-current transfer ratio
3076
IC = 200 mA dc; f = 30 - 60 Hz;
L = 15 mH (see figure 2)
IC = 200 mA dc; f = 30 - 60 Hz;
L = 15 mH (see figure 2)
IC = 200 mA dc; f = 30 - 60 Hz;
L = 2 mH (see figure 2)
Bias condition D
VEB = 7 V dc
Bias condition D
VCE = 80 V dc
Bias condition A; VBE = -1.5 V dc
V(BR)CEO
V dc
V dc
110
140
V dc
V dc
120
150
V dc
V dc
V(BR)CER
V(BR)CEX
IEBO
10
mA dc
ICEO
10
mA dc
12
10
mA dc
mA dc
25
25
mA dc
mA dc
ICEX1
VCE = 110 V dc
VCE = 135 V dc
Bias condition D;
ICBO
VCB = 120 V dc
VCB = 150 V dc
VCE = 2.6 V dc; IC = 50 A dc
(pulsed see 4.5.1)
hFE1
2N6032
Forward-current transfer ratio
90
120
3076
VCE = 2.0 V dc; IC = 40 A dc
(pulsed see 4.5.1)
2N6033
See footnote at end of table.
6
10
50
10
50
hFE1
MIL-PRF-19500/528A
TABLE I. Group A inspection - continued.
Inspection
1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 2 - Continued
Collector-emitter saturation
voltage
2N6032
3071
IC = 50 A dc; IB = 5.0 A dc;
pulsed (see 4.5.1)
VCE(sat)
1.3
V dc
Collector-emitter saturation
voltage
2N6033
3071
IC = 40 A dc; IB = 4.0 A dc
pulsed (see 4.5.1)
VCE(sat)
1.0
V dc
Base-emitter saturation voltage
3306
Test condition A; IB = 5.0 A dc;
IC = 50 A dc; pulsed (see 4.5.1)
VBE(sat)
2.0
V dc
3306
Test condition A; IB = 4.0 A dc;
IC = 40 A dc; pulsed (see 4.5.1)
VBE(sat)
2.0
V dc
15
10
mA dc
mA dc
2N6032
Base-emitter saturation voltage
2N6033
Subgroup 3
High temperature operation
Collector to emitter cutoff
current
TA = +150°C
3041
Bias condition D;VBE = 1.5 V dc;
VCE = 100 V dc
ICEX2
2N6032
2N6033
Low temperature operation
Forward-current transfer ratio
TA = -55°C
3076
2N6032
2N6033
pulsed (see 4.5.1)
hFE2
5
5
VCE = 2.6 V dc; IC = 50 A dc
VCE = 2.0 V dc; IC = 40 A dc
Subgroup 4
Magnitude of small-signal
short- circuit forward current
transfer ratio
3306
VCE = 10 V dc; IC = 2.0 A dc;
f = 5.0 MHz
/hfe/
Open circuit Output
capacitance
3236
VCB = 10 V dc; IE = 0;
100 kHz < f < 1 MHz
Cobo
See footnote at end of table.
7
10
40
1,000
pF
MIL-PRF-19500/528A
TABLE I. Group A inspection - continued.
Inspection
1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 4 - Continued
Pulse response:
3251
Turn-on time
2N6032
Test condition A except test circuit
and pulse requirements in
accordance with figure 3.
VCC = 30 V dc ±2; IC = 50 A dc;
IB1 = 5.0 A dc
VCC = 30 V dc ±2; IC = 40 A dc;
IB1 = 4.0 A dc
2N6033
Turn-off time
2N6032
VCC = 30 V dc ±2; IC = 50 A dc;
IB2 = 5.0 A dc, IB2 = -5.0 A dc
VCC = 30 V dc ±2; IC = 40 A dc;
IB1 = 4.0 A dc, IB2 = -4.0 A dc
2N6033
Subgroup 5
Safe operating area
(continuous dc)
3051
TC = +25°C; t = 1 s; 1 cycle;
(see figure 4)
Test 1
2N6032 only
IC = 50 A dc; VCE = 2.8 V dc
Test 2
2N6033 only
IC = 40 A dc; VCE = 3.5 V dc
Test 3
IC = 5.8 A dc; VCE = 24 V dc
Test 4
IC = 0.9 A dc; VCE = 40 V dc
Test 5
2N6032 only
IC = 0.18 A dc; VCE = 90 V dc
Test 6
2N6033 only
IC = 0.1 A dc; VCE = 120 V dc
See footnote at end of table.
8
ton
0.5
µs
toff
2.0
µs
MIL-PRF-19500/528A
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Method
Symbol
Conditions
Subgroup 5 - Continued
Safe operating
area (switching)
3053
tp ≈ 10 ms;
RBB1 = 1Ω;
VBB1 = 10 V dc max;
RBB2 = 20Ω;
VBB2 = 4 V dc;
Test 1
2N6032
2N6033
IC = 50 A dc;
IC = 40 A dc;
VCC = 10 V dc
L = 50 µH, 0.1 Ω;
tp ≈ 10 ms;
RBB1 = 10Ω;
VBB1 = 10 V dc max;
RBB2 = 20Ω;
VBB2 = 4 V dc;
IC = 10 A dc;
VCC = 10 V dc
L = 500 µH, 0.1 Ω
Test 2
Electrical measurements
Safe operating
area (switching)
Load condition C;
(unclamped inductive lead)
(see figure 5);
TC = +25°C;
Duty cycle ≤ 10 percent; RS = 0.1
ohm;
See table I, group A, subgroup 2
----
2N6032
2N6033
2N6032
2N6033
Electrical measurements
TA = +25°C; duty cycle ≤ 10 percent.
tp ≈ 10 ms (vary to obtain IC);
RS ≤ 1 Ω;
VCC ≥ 50 V dc;
L = 50 µH, 0.1 Ω
IC = 50 A dc;
IC = 40 A dc;
clamp voltage = 90 V dc;
clamp voltage = 120 V dc;
(see figure 6)
See table I, group A, subgroup 2
Subgroups 6 and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
9
Limits
Min
Unit
Max
MIL-PRF-19500/528A
NOTE: V(BR)CEO, V(BR)CER, V(BR)CEX is acceptable when the trace falls to the right and above point "A" for type 2N6032.
The trace shall fall to the right and above point "B" for type 2N6033
FIGURE 2. V(BR)CEO, V(BR)CER, V(BR)CEX measurement circuit.
10
MIL-PRF-19500/528A
NOTES:
1. The rise time (tr) and fall time (tf) of the applied pulse shall be each < 20 nanoseconds;
duty cycle < 2%, generator source impedance shall be 50 Ω; pulse width : 20 ns.
2. Output sampling oscilloscope: Zin > 100 kΩ; Cin < 50 pF; rise time < 20 nanoseconds.
FIGURE 3. Pulse response test circuit.
11
MIL-PRF-19500/528A
FIGURE 4 Maximum safe operating area graph (continuous DC).
12
MIL-PRF-19500/528A
FIGURE 5. Safe operating area for switching between saturation and cutoff (unclamped inductive load).
13
MIL-PRF-19500/528A
NOTES:
1.
Either a clamping circuit or clamping diode may be used.
2.
The coil used shall provide a minimum inductance of 50 µH with a maximum dc resistance of .1 ohm.
3.
RS ≤ .1 Ω, 12 W, 1% tolerance maximum (non-inductive).
Procedure
1. With switch S1 closed, set the specified test conditions.
2. Open S1. Device fails if clamp voltage not reached and maintained until the current returns to zero.
3. Perform specified endpoint tests.
FIGURE 6. Clamped inductive sweep test circuit.
14
MIL-PRF-19500/528A
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When
actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to
ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity
within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a.
Lead formation and finish may be specified (see 3.3.1).
b.
Type designation and product assurance level.
c.
Packaging requirements (see 5.1).
6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extensiveness of the changes.
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not such products have actually been so
listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
CONCLUDING MATERIAL
Custodians:
Air Force - 11
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-F161)
Review activities:
Air Force - 19
15
MIL-PRF-19500/528A
This page intentionally left blank
16
MIL-PRF-19500/528A
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current
contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s)
or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/528A
2. DOCUMENT DATE
99/07/23
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6032 AND 2N6033
JAN, JANTX, AND JANTXV,
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
Commercial
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAC
Columbus, OH 43216-5000
DD FORM 1426, FEB 99 (EG)
b. TELEPHONE
Commercial
DSN
614-692-0510
850-0510
FAX
614-692-6939
EMAIL
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC -LM)
8725 John J. Kingman Road, Suite 2533
Fort Belvior, Virginia 22060-6221
Telephone (703) 767-6888 DSN 427-6888
PREVIOUS EDITIONS ARE OBSOLETE
17
WHS/DIOR, Feb 99