Phototransistors PNZ109L (PN109L) Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features Built-in filter to cutoff visible light for reducing ambient light noise Peak sensitivity wavelength matched with infrared light emitting devices : λp = 900 nm (typ.) 12.7 min. High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 100 lx) 3-ø0.45±0.05 2.54±0.25 Fast response : tr = 5 µs (typ.) 0± 1. 1. 3˚ 0± 0. 45± 15 2 0. Long lifetime, high reliability 3 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 3 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Base 2: Collector ø5.75 max. Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle Fall time *2 VCE = 10V, L = 100 lx*1 typ max Unit 0.05 2 µA 3.5 mA VCE = 10V 900 nm θ Measured from the optical axis to the half power point 10 deg. VCC = 10V, ICE(L) = 5mA 5 µs tf Collector saturation voltage min λP tr*2 Rise time *1 ICE(L) Conditions VCE = 10V *2 VCE(sat) RL = 100Ω µs 6 ICE(L) = 1mA, L = 500 lx*1 0.3 0.6 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ;;;; ;; 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNZ109L PC — Ta ICE(L) — VCE 20 120 80 40 Ta = 25˚C 500 lx T = 2856K 300 lx 16 200 lx 12 100 lx 8 50 lx 4 20 40 60 80 0 100 Ta (˚C ) 0 4 8 12 ICEO — Ta 10 2 10 1 10 –1 10 –1 10 –2 40 Ambient temperature 60 80 10 Ta (˚C ) 10˚ 50 80 80 60 40 0 600 120 40 50˚ 30 60˚ VCC = 10V Ta = 25˚C 900 1000 1100 1200 VCC = 10V Ta = 25˚C 10 4 10 3 10 2 RL = 1kΩ 500Ω 10 10 2 RL = 1kΩ 500Ω 10 100Ω 100Ω 70˚ 80˚ 800 tf — ICE(L) tf (µs) 40˚ 700 Wavelength λ (nm) Ta (˚C ) 10 3 tr (µs) 60 30˚ Rise time 70 40 10 4 Relative sensitivity S (%) 90 VCE = 10V Ta = 25˚C tr — ICE(L) 20˚ 100 80 0 Ambient temperature Directivity characteristics 0˚ 10 4 20 1 – 40 100 10 3 L (lx) Spectral sensitivity characteristics 100 Relative sensitivity Collector photo current 1 10 2 10 Illuminance S (%) ICE(L) (mA) 10 1 VCE (V) VCE = 10V L = 100 lx T = 2856K VCE = 10V 20 10 –2 24 ICE(L) — Ta 10 2 0 20 Collector to emitter voltage 10 2 10 –3 – 20 16 Fall time 0 Ambient temperature ICEO (µA) VCE = 10V Ta = 25˚C T = 2856K 10 3 ICE(L) (mA) 1000 lx L = 10 lx 0 – 20 Dark current ICE(L) — L Collector photo current ICE(L) (mA) 160 Collector photo current Collector power dissipation PC (mW) 200 1 1 90˚ 10 –1 10 –2 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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