Transmissive Photosensors (Photo Interrupters) CNA1303K (ON1003) Photo Interrupter A Slit width (0.3) (1.5) ;;;; For contactless SW, object detection Unit : mm Overview SEC. A-A' 1.5 Device center Features Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm) (C0.5) Gate the rest 0.3 max. (C0.3) 2-0.25 *3.2 Fast response : tr, tf = 35 µs (typ.) 4.2 3.9 4.0 min. 5.2 2.8 (1.0) 1.5 1 Not soldered 1.0 max. CNA1303K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package. A' 4.2 1.2 3 ø1.5 +0.1 –0 2-0.5 *2.54 2 4 Highly precise position detection : 0.15 mm 1 3 2 4 Pin connection (Note) 1. Tolerance unless otherwise specified is ±0.2 2. ( ) Dimension is reference 3. * is dimension at the root of leads 4. Burrs should be less than 0.15mm Gap width : 1.2 mm Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation VR 6 Unit IF 50 mA PD*1 75 mW IC 20 mA Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO 35 V 6 V Collector power dissipation PC*2 75 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C Temperature Soldering temperature Tsol *3 Input power derating ratio is 1.0mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.0mW/˚C at Ta ≥ 25˚C. *3 Soldering time is within 5 seconds. 260 ; ;;; ;;; Collector current *1 V more than 1mm Soldering bath ˚C Electrical Characteristics (Ta = 25˚C) Parameter Symbol Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Conditions typ max Unit 1.2 1.4 V VR = 3V 10 µA VCE = 20V 100 nA 1300 µA 0.4 V VF IF = 20mA IR ICEO Collector current IC VCE = 5V, IF = 5mA Transfer Collector to emitter saturation voltage V CE(sat) IF = 10mA, IC = 50µA characteristics Response time tr , tf* VCC = 5V, IC = 0.1mA, RL = 1000Ω * min 100 35 µs Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ;; ;; 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 CNA1303K Transmissive Photosensors (Photo Interrupters) IF , IC — Ta IF — V F Ta = 25˚C IF 30 IC VF (V) 40 Forward voltage 40 20 IF = 50mA 50 IF (mA) 50 30 20 20 40 60 80 0 100 0 0.4 10mA 1mA 0.8 0.4 0.8 1.2 1.6 2.0 0 – 40 – 20 2.4 Forward voltage VF (V) IC — I F 0 IC — VCE VCE = 5V Ta = 25˚C 3 Collector current 80 100 120 VCE = 5V IF = 5mA 100 80 2 IF = 20mA 2 60 Ta = 25˚C IC (mA) 4 40 IC — Ta 3 IC (%) 5 20 Ambient temperature Ta (˚C ) Relative output current 0 Ambient temperature Ta (˚C ) IC (mA) 1.2 10 10 0 – 25 Collector current VF — Ta 1.6 60 Forward current Forward current, collector current IF , IC (mA) 60 15mA 1 10mA 1 5mA 60 40 20 2mA 0 0 5 10 15 20 0 25 Forward current IF (mA) 0 1 2 3 4 5 0 – 40 – 20 6 Collector to emitter voltage VCE (V) ICEO — Ta 0 tr — IC 40 60 80 100 tf — IC 10 3 1 20 Ambient temperature Ta (˚C ) 10 3 VCC = 5V Ta = 25˚C VCE = 20V VCC = 5V Ta = 25˚C 10 100Ω 1 Sig.IN VCC 0 20 40 60 80 Ambient temperature Ta (˚C ) 2 100 tr ; ;; 10 –5 – 40 – 20 Sig. OUT RL 10 –1 10 –2 10 –1 1kΩ 10 100Ω 1 10 –4 Sig. OUT 50Ω RL = 2kΩ td 90% 10% tf 1 Collector current IC (mA) 10 Sig.IN Sig. OUT 50Ω VCC Sig. OUT RL ;; 10 –3 RL = 2kΩ 1kΩ Fall time 10 –2 tf (µs) 10 2 tr (µs) 10 2 Rise time Dark current ICEO (µA) 10 –1 10 –1 10 –2 10 –1 tr td 90% 10% tf 1 Collector current IC (mA) 10 Transmissive Photosensors (Photo Interrupters) IC — d (1) IC — d (2) 100 100 VCE = 5V Ta = 25˚C IF = 5mA 80 Criterion 0 d 60 40 20 0 1 2 3 Distance d (mm) 4 80 Criterion 0 ; ;; Relative output current IC (%) Relative output current IC (%) VCE = 5V Ta = 25˚C IF = 5mA 0 CNA1303K d 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 Distance d (mm) 3 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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