ETC STD40NF10

STP40NF10
STD40NF10 - STB40NF10
N-CHANNEL 100V - 0.024Ω - 50A TO-220/DPAK/D2PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP40NF10
STD40NF10
STB40NF10
100 V
100 V
100 V
< 0.028 Ω
< 0.028 Ω
< 0.028 Ω
50 A
50 A
50 A
■
■
■
■
■
3
TYPICAL RDS(on) = 0.024Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
1
1
2
DPAK
TO-220
3
1
2
D PAK
INTERNAL SCHEMATIC DIAGRAM
DESCRIPTION
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
■ HIGH-CURRENT SWITCHING APPLICATIONS
■
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP40NF10
P40NF10
TO-220
TUBE
STD40NF10T4
D40NF10
DPAK
TAPE & REEL
STB40NF10T4
B40NF10
D²PAK
TAPE & REEL
October 2003
1/13
STP40NF10 - STD40NF10 - STB40NF10
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
TO-220 - D²PAK
Unit
DPAK
Drain-source Voltage (VGS = 0)
100
V
Drain-gate Voltage (RGS = 20 kΩ)
100
V
VGS
Gate- source Voltage
± 20
V
ID(*)
Drain Current (continuous) at TC = 25°C
50
A
ID
Drain Current (continuous) at TC = 100°C
35
A
Drain Current (pulsed)
200
A
VDS
VDGR
IDM ()
PTOT
Total Dissipation at TC = 25°C
Derating Factor
150
125
W
1
0.83
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
20
35
V/ns
EAS (2)
Single Pulse Avalanche Energy
150
135
mJ
Tstg
Tj
Storage Temperature
– 55 to 175
Operating Junction Temperature
°C
() Pulse width limited by safe operating area
(*) Limited by Package
(1) ISD ≤ 50A, di/dt ≤ 600 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 50A, VDD = 25V
THERMAL DATA
TO-220 - D²PAK
DPAK
1
1.2
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
ON /OFF
Symbol
V(BR)DSS
IDSS
Parameter
Test Conditions
Max.
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
±100
nA
2.8
4
V
0.024
0.028
Ω
VGS(th
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 25 A
100
Unit
Zero Gate Voltage
Drain Current (VGS = 0)
VGS = ± 20V
2/13
Typ.
ID = 250 µA, VGS = 0
Gate-body Leakage
Current (VDS = 0)
IGSS
Min.
Drain-source
Breakdown Voltage
2
V
STP40NF10 - STD40NF10 - STB40NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol
gfs (1)
Parameter
Test Conditions
Forward Transconductance
VDS = 25V, ID = 25 A
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Coss
Crss
Min.
Typ.
Max.
Unit
20
S
1780
pF
Output Capacitance
265
pF
Reverse Transfer
Capacitance
112
pF
SWITCHING ON
Symbol
td(on)
tr
Parameter
Test Conditions
Rise Time
VDD = 50 V, ID = 25 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD= 80V, ID= 50A, VGS = 10V
Turn-on Delay Time
Min.
Typ.
Max.
Unit
28
ns
63
ns
Qg
Total Gate Charge
Qgs
Gate-Source Charge
60.6
9.6
nC
Qgd
Gate-Drain Charge
22.8
nC
80
nC
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off-Delay Time
Fall Time
Test Conditions
Min.
VDD = 50 V, ID = 25 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
Typ.
Max.
84
28
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
ISDM (2)
VSD (1)
trr
Qrr
IRRM
Parameter
Test Conditions
Max.
Unit
Source-drain Current
50
A
Source-drain Current (pulsed)
200
A
Forward On Voltage
ISD = 50 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 50 A, di/dt = 100A/µs,
VDD = 25V, Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
1.3
114
456
8
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
2. Pulse width limited by safe operating area.
3/13
STP40NF10 - STD40NF10 - STB40NF10
Safe Operating Area For TO-220/D²PAK
Thermal Impedance For TO-220/D²PAK
Safe Operating Area For DPAK
Thermal Impedance For DPAK
Output Characteristics
Transfer Characteristics
4/13
STP40NF10 - STD40NF10 - STB40NF10
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
STP40NF10 - STD40NF10 - STB40NF10
Source-drain Diode Forward Characteristics
6/13
Normalized Drain-Source Breakdown vs Temp.
STP40NF10 - STD40NF10 - STB40NF10
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/13
STP40NF10 - STD40NF10 - STB40NF10
TO-220 MECHANICAL DATA
DIM.
8/13
mm.
MIN.
TYP
inch
MAX.
MIN.
4.60
0.173
TYP.
MAX.
A
4.40
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
L30
28.90
0.645
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STP40NF10 - STD40NF10 - STB40NF10
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
A
2.20
2.40
0.087
TYP.
MAX.
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
9/13
STP40NF10 - STD40NF10 - STB40NF10
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
10/13
1
STP40NF10 - STD40NF10 - STB40NF10
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
12.1
0.476
B1
1.6
MIN.
1.5
C
12.8
D
20.2
G
16.4
N
50
D
1.5
1.5
E
1.65
1.85
0.065 0.073
F
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
16.3
1.574
0.618
40
0.059
13.2
0.504 0.520
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059 0.063
K0
15.7
12.992
0.059
P0
R
MAX.
MAX.
D1
W
MIN.
330
T
TAPE MECHANICAL DATA
inch
MAX.
0.641
* on sales type
11/13
STP40NF10 - STD40NF10 - STB40NF10
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
12/13
0.075 0.082
0.933 0.956
MAX.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STP40NF10 - STD40NF10 - STB40NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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13/13