Transistor 2SD2225 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1473 Unit: mm 1.05 2.5±0.1 ±0.05 ■ Features 0.65 max. 14.5±0.5 ● High collector to emitter voltage VCEO of 120V. Optimum for low-frequency driver amplification. Allowing supply with the radial taping. 0.8 0.2 ● (1.45) 1.0 1.0 ● 4.0 0.5 4.5±0.1 0.15 6.9±0.1 0.7 +0.1 * 0.45–0.05 2.5±0.5 Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 2.5±0.5 2 3 2.5±0.1 Parameter 1 +0.1 (Ta=25˚C) 0.45–0.05 ■ Absolute Maximum Ratings Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 or more, and the board 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = 0.1mA, IB = 0 120 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V hFE1 *1 VCE = 10V, IC = 150mA*2 90 330 hFE2 VCE = 5V, IC = 500mA*2 50 hFE3 VCE = 5V, IC = 100mA*2 100 VCE(sat) IC = 300mA, IB = 30mA*2 Base to emitter saturation voltage VBE(sat) IC = 300mA, IB = 30mA*2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz*2 200 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 11.5 Forward current transfer ratio Collector to emitter saturation voltage 0.15 1 0.9 1.2 FE1 V MHz 20 *2 *1h V pF Pulse measurement Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 185 ~ 330 1 2SD2225 Transistor IC — VCE 1.0 0.8 0.6 0.4 Ta=25˚C Collector current IC (mA) 0.2 160 IB=1.0mA 0.9mA 0.8mA 120 0.7mA 0.6mA 80 0.5mA 0.4mA 0.3mA 40 0.2mA 0.1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.3 1 3 10 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) IE=0 f=1MHz Ta=25˚C 60 50 40 30 20 10 0 1 3 10 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 Collector current IC (A) fT — I E 400 500 400 300 Ta=75˚C 25˚C 200 –25˚C 100 VCB=10V Ta=25˚C 350 300 250 200 150 100 50 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 80 70 12 30 IC/IB=10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.1 10 600 IC/IB=10 0.01 0.01 0.03 8 IC/IB=10 hFE — IC 100 1 6 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 3 4 Transition frequency fT (MHz) Collector power dissipation PC (W) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 200 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.2 10 0 –1 –3 –10 –30 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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