ETC 2SD2179R

Transistor
2SD2179
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1446
Unit: mm
1.05 2.5±0.1
±0.05
■ Features
0.65 max.
14.5±0.5
●
1.0 1.0
●
(1.45)
0.8
0.2
Low collector to emitter saturation voltage VCE(sat).
Complementary pair with 2SB1446.
Allowing supply with the radial taping.
●
4.0
0.5
4.5±0.1
0.15
6.9±0.1
0.7
+0.1
*1
2.5±0.5
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
7
A
Collector current
IC
5
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
2.5±0.5
2
3
2.5±0.1
Parameter
1
+0.1
(Ta=25˚C)
0.45–0.05
0.45–0.05
■ Absolute Maximum Ratings
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
or more, and the board
0.65
max.
0.45+–0.1
0.05
(HW type)
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
0.1
µA
Collector cutoff current
ICBO
VCB = 20V, IE = 0
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
50
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
V
hFE1
Forward current transfer ratio
*1
VCE = 2V, IC =
500mA*2
120
340
hFE2
VCE = 2V, IC = 2.5A*2
Collector to emitter saturation voltage
VCE(sat)
IC = 2A, IB = 100mA*2
0.19
0.3
V
Base to emitter saturation voltage
VBE(sat)
IC = 2A, IB = 100mA*2
0.85
1.2
V
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
80
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
60
60
MHz
70
*2
*1h
FE1
pF
Pulse measurement
Rank classification
Rank
R
S
hFE1
120 ~ 240
170 ~ 340
1
2SD2179
Transistor
PC — Ta
IC — VCE
1.0
0.8
0.6
0.4
Ta=25˚C
2.0
0.2
IB=8mA
1.6
7mA
1.2
6mA
5mA
0.8
4mA
3mA
0.4
2mA
1mA
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
10
3
25˚C
Ta=–25˚C
100˚C
0.3
0.1
0.03
1
3
10
Collector current IC (A)
IE=0
f=1MHz
Ta=25˚C
200
160
120
80
40
0
1
3
10
1
0.3
0.1
Ta=100˚C
25˚C
0.03
–25˚C
0.01
0.003
0.001
0.01 0.03
30
100
Collector to base voltage VCB (V)
0.1
0.3
200
400
Ta=100˚C
300
25˚C
–25˚C
200
100
0
0.01 0.03
0.1
0.3
1
3
10
Collector current IC (A)
fT — I E
1
3
Collector current IC (A)
Cob — VCB
240
3
VCB=10V
Ta=25˚C
VCE=2V
Forward current transfer ratio hFE
Base to emitter saturation voltage VBE(sat) (V)
30
0.3
10
500
IC/IB=20
0.1
8
IC/IB=20
hFE — IC
100
0.01
0.01 0.03
6
10
Collector to emitter voltage VCE (V)
VBE(sat) — IC
1
4
Transition frequency fT (MHz)
0
Collector output capacitance Cob (pF)
Collector to emitter saturation voltage VCE(sat) (V)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
2
VCE(sat) — IC
2.4
Collector current IC (A)
Collector power dissipation PC (W)
1.2
10
160
120
80
40
0
–1
–3
–10
–30
Emitter current IE (mA)
–100
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2001 MAR