ETC 2SB856A

2SB856
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220AB
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Emitter to base voltage
VEBO
–4
V
Collector current
IC
–3
A
25
W
1
Collector power dissipation
PC*
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at TC = 25°C
2SB856
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–50
—
—
V
IC = –5 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
–50
—
—
V
IC = –50 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–4
—
—
V
IE = –5 mA, IC = 0
Collector cutoff current
ICBO
—
—
–100
µA
VCB = –20 V, IE = 0
35
—
200
VCE = –4 V, IC = –1 A*
hFE2
35
—
—
VCE = –4 V, IC = –0.1 A*
Base to emitter voltage
VBE
—
—
–1.5
V
VCE = –4 V, IC = –1 A*
Collector to emitter saturation
voltage
VCE(sat)
—
—
–1.2
V
IC = –2 A, IB = –0.2 A*
Gain bandwidth product
fT
—
35
—
MHz
VCE = –4 V, IC = –0.5 A*
DC current transfer ratio
hFE1*
1
2
B
C
35 to 70
60 to 120
100 to 200
Maximum Collector Dissipation Curve
2
Area of Safe Operation
–5
20
10
–2
IC (max) (Continuous)
TC = 25°C
–1.0
DC
(–8.4 V, –3 A)
O
pe
ra
tio
n
(–23 V, –1.1 A)
–0.5
(–50 V, –0.25 A)
–0.2
0
2
–10
Collector Current IC (A)
Collector power dissipation Pc (W)
30
50
100
Case Temperature TC (°C)
150
2
2
Notes: 1. The 2SB856 is grouped by hFE1 as follows.
2. Pulse test
A
2
–0.1
–0.5 –1.0 –2
–5 –10 –20
–50
Collector to emitter Voltage VCE (V)
2SB856
Typical Transfer Characteristics
Typical Output Characteristics
–10
–30 –25
TC = 25°C
–7.5
–0.8
–5
–0.4
–2.5 mA
–0.3
–0.1
–0.03
IB = 0
0
–1.0
–0.01
0
–2
–4
–6
–8
–10
Collector to emitter Voltage VCE (V)
VCE = –4 V
Collector to emitter saturation voltage
VCE (sat) (V)
DC current transfer ratio hFE
300
TC = 75°C
100
30
25
–25
10
–10
–3
IC = 10 IB
–1.0
–0.3
TC
=
°C
75
–0.1
–25
25
–0.03
3
1
–0.01 –0.03 –0.1 –0.3 –1.0 –3
Collector current IC (A)
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Base to emitter voltage VBE (V)
Collector to Emitter Saturation
Voltage vs. Collector Current
DC Current Transfer Ratio vs.
Collector Current
1,000
–25
–10
25
–1.2
–3 VCE = –4 V
TC = 75
°C
–20
–17.5
–15
–12.5
–1.6
Collector current IC (A)
Collector Current IC (A)
–2.0
–10
–0.01
–0.01 –0.03
–0.1 –0.3 –1.0
–3
Collector current IC (A)
–10
3
2SB856
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
4
2SB856
Hitachi, Ltd.
Semiconductor & IC Div.
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