Transistor 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planer type For high breakdown voltage general amplification Unit: mm 6.9±0.1 1.0 0.85 Parameter (Ta=25˚C) Symbol Collector to 2SD0662 base voltage 2SD0662B Collector to 2SD0662 emitter voltage 2SD0662B Ratings VEBO Peak collector current 3 200 2.5 5 V ICP 100 mA Collector current IC 70 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol ICEO Collector to emitter 2SD0662 voltage 2SD0662B 1:Base 2:Collector 3:Emitter Conditions IC = 100µA, IB = 0 VEBO IE = 10µA, IC = 0 hFE* VCE = 10V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Forward current 2SD0662 transfer ratio 2SD0662B *h FE 4.5±0.1 EIAJ:SC–71 M Type Mold Package min typ VCE = 100V, IB = 0 VCEO Emitter to base voltage 2.5 (Ta=25˚C) Parameter Collector cutoff current 1 V 400 ■ Electrical Characteristics 2 V 400 VCEO 0.45±0.05 Unit 250 VCBO Emitter to base voltage 0.55±0.1 1.25±0.05 ■ Absolute Maximum Ratings 4.1±0.2 7 0. ● High collector to emitter voltage VCEO. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 max Unit 2 µA 200 V 400 5 V 30 220 30 150 1.2 50 80 5 V MHz 10 pF Rank classification Rank P Q R hFE 30 ~ 100 60 ~ 150 100 ~ 220 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SD0662, 2SD0662B Transistor PC — Ta IC — VCE 120 500 400 300 200 80 0.6mA 60 0.4mA 40 0.2mA 25˚C 100 20 Ta=75˚C –25˚C 80 60 40 20 100 0 80 120 160 200 0 0 2 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 100 80 60 40 20 0 0.8 8 10 0 0.4 1.2 1.6 2.0 2.5 10 3 1 Ta=75˚C 0.3 25˚C –25˚C 0.1 2.0 1.5 1.0 0.5 0.03 0.01 0.01 0.03 0 0.1 0.3 1 3 10 0 0.2 0.4 0.6 fT — IE VCB=250V VCB=10V Ta=25˚C 180 25˚C –25˚C 60 140 103 120 ICBO (Ta) ICBO (Ta=25˚C) Transition frequency fT (MHz) Ta=75˚C 1.0 ICBO — Ta 104 VCE=10V 0.8 Base to emitter voltage VBE (V) 160 240 2.0 VCE=10V Ta=25˚C 30 Collector current IC (mA) 300 1.6 3.0 IC/IB=10 hFE — IC 120 1.2 IB — VBE 100 Base current IB (mA) 360 0.8 Base to emitter voltage VBE (V) VCE(sat) — IC 120 0.4 6 Collector to emitter voltage VCE (V) IC — I B 0 4 Base current IB (mA) 40 Ambient temperature Ta (˚C) Collector current IC (mA) IB=2.0mA Collector current IC (mA) 100 600 0 Forward current transfer ratio hFE VCE=10V Ta=25˚C 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 700 0 100 80 60 40 102 10 20 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (mA) 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 800 10 0 –1 1 –3 –10 –30 Emitter current IE (mA) –100 0 40 80 120 160 200 Ambient temperature Ta (˚C) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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