Power Transistors 2SC1846 Silicon NPN epitaxial planar type Unit: mm For midium output power amplification Complementary to 2SA0885 (2SA885) 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 ■ Absolute Maximum Ratings TC = 25°C 0.5±0.1 0.5±0.1 4.6±0.2 Parameter Symbol Rating Unit VCBO 45 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector to base voltage Collector power dissipation PC 1.2 *1 3.05±0.1 • Low collector to emitter saturation voltage VCE(sat) • Output of 3 W can be obtained by a complementary pair with 2SA0885 • TO-126B package which requires no insulation plate for installation to the heat sink 11.0±0.5 ■ Features 16.0±1.0 3.8±0.3 φ 3.16±0.1 1 2 1.76±0.1 2.3±0.2 1 : Emitter 2 : Collector 3 : Base TO-126B Package 3 W 5 *2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Max Unit ICBO VCB = 20 V, IE = 0 Conditions Min Typ 0.1 µA ICEO VCE = 20 V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 10 µA Collector to base voltage VCBO IC = 1 mA, IE = 0 45 V Collector to emitter voltage VCEO IC = 2 mA, IB = 0 35 V VCE = 10 V, IC = 500 mA 85 VCE = 5 V, IC = 1 A 50 Forward current transfer ratio hFE1 * hFE2 Collector to emitter saturation voltage Transition frequency VCE(sat) fT Collector output capacitance Cob 160 IC = 500 mA, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 340 0.5 200 V MHz 20 pF Note) *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note)The part number in the parenthesis shows conventional part number. 1 2SC1846 Power Transistors PC T a IC VCE (1)With a 100×100×2mm Al heat sink (2)Without heat sink TC=25˚C (1) 2 1 7mA 6mA 0.75 5mA 4mA 0.5 3mA 2mA 0.8 0.6 0.4 0.2 1mA 0 0 0 2 4 6 8 10 0 2 4 6 8 10 Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC VBE(sat) IC hFE IC IC/IB=10 1 TC=100˚C 0.3 25˚C –25˚C 0.1 0.03 0.01 0.003 0.03 0.1 0.3 1 TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 0.03 0.1 0.3 f T IE 10 3 0.03 Cob VCB Collector output capacitance Cob (pF) VCB=10V 180 f=200MHz TC=25˚C 160 140 120 100 80 60 40 20 –30 Emitter current IE (mA) –100 0.1 0.3 1 IE=0 f=1MHz TC=25˚C 40 30 20 10 1 3 10 3 VCER RBE 100 0 –10 30 Collector current IC (A) 50 –3 –25˚C 100 1 0.01 3 1 TC=100˚C 25˚C 300 Collector current IC (A) 200 0 –1 VCE=10V 3 0.01 0.01 3 12 1000 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 0.001 0.01 IC/IB=10 10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) Ambient temperature Ta (˚C) Collector current IC (A) Transition frequency fT (MHz) 9mA 8mA 1.0 0 20 40 60 80 100 120 140 160 180 200 Collector to emitter saturation voltage VCE(sat) (V) 1.0 IB=10mA 0.25 (2) 0 2 VCE=–10V Ta=25˚C 1.25 4 3 1.2 Collector current IC (A) 5 IC I B 1.5 Collector current IC (A) Collector power dissipation PC (W) 6 IC=10mA TC=25˚C 80 60 40 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Power Transistors 2SC1846 ICBO Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse TC=25˚C 3 Collector current IC (A) ICP ICBO (Ta) ICBO (Ta=25˚C) 103 102 10 1 IC t=10ms 0.3 t=1s 0.1 0.03 0.01 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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