Power Transistors 2SD1269 Silicon NPN epitaxial planar type For power switching Complementary to 2SB0944 (2SB944) Unit: mm ● 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 4 A Collector power TC=25°C dissipation 35 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO VCB = 100V, IE = 0 Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 80 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 1A 60 Forward current transfer ratio 1.3±0.2 W 2 ■ Electrical Characteristics 2.7±0.2 4.0 ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 typ max Unit 10 µA 50 µA V 260 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.15A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 3A, IB = 0.15A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE2 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 MHz 0.5 µs 2.5 µs 0.15 µs Rank classification Rank R Q P hFE2 60 to 120 90 to 180 130 to 260 Note.) The Part number in the Parenthesis shows conventional part number. 1 Power Transistors 2SD1269 IC — VCE 40 (1) 30 20 (2) 10 TC=25˚C 7 Collector current IC (A) (3) (4) IB=300mA 6 140mA 120mA 100mA 5 60mA 4 40mA 3 20mA 2 10mA 1 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 12 3 TC=100˚C –25˚C 25˚C 0.1 0.03 0.1 0.3 1 3 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 Switching time ton,tstg,tf (µs) 100 30 10 100 Collector to base voltage VCB (V) 10 100 30 10 10 3 0.3 1 3 10 Non repetitive pulse TC=25˚C 30 tstg 1 0.1 Area of safe operation (ASO) tf 0.3 ton 0.1 10 ICP IC t=0.5ms 3 10ms 1 1ms 0.3 DC 0.1 0.03 0.01 30 3 100 0.03 3 1 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 30 300 0.3 300 1 0.01 0.03 10 ton, tstg, tf — IC 1000 0.1 VCE=10V f=10MHz TC=25˚C Collector current IC (A) IE=0 f=1MHz TC=25˚C 10 0.001 0.01 0.03 3 100 3 0.003 1000 Cob — VCB 1 0.01 3000 1 0.01 0.03 10 10000 0.3 0.03 VCE=2V 3000 Collector current IC (A) 3000 –25˚C 0.1 fT — IC 1000 0.01 0.01 0.03 25˚C 0.3 Collector current IC (A) Transition frequency fT (MHz) 10 0.3 TC=100˚C 1 10000 IC/IB=20 1 IC/IB=20 3 hFE — IC 30 1 0.1 10 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 Collector output capacitance Cob (pF) 6 Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 2 VCE(sat) — IC 8 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 0.01 0 1 2 3 4 Collector current IC (A) 5 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD1269 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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