Power Transistors 2SB0948, 2SB0948A (2SB948, 2SB948A) Silicon PNP epitaxial planar type Unit: mm ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector to base voltage 2SB0948 Collector to emitter voltage 2SB0948 Rating −40 VCBO −20 VCEO 4.2±0.2 2.7±0.2 16.7±0.3 φ 3.1±0.1 1.4±0.1 0.8±0.1 V 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F Package 1 2 3 V VEBO −5 V Peak collector current ICP −20 A IC −10 A PC 40 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current TC = 25°C Ta = 25°C 0.5+0.2 –0.1 2.54±0.3 −40 2SB0948A 1.3±0.2 5.08±0.5 −50 2SB0948A 5.5±0.2 Unit Emitter to base voltage Collector power dissipation 14.0±0.5 • Low collector to emitter saturation voltage VCE(sat) • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 Solder Dip (4.0) ■ Features 10.0±0.2 7.5±0.2 0.7±0.1 For low-voltage switching Complementary to 2SD1445 and 2SD1445A 2 ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB0948 Conditions ICBO VCB = −40 V, IE = 0 IEBO VEB = −5 V, IC = 0 VCEO IC = −10 mA, IB = 0 hFE1 VCE = −2 V, IC = − 0.1 A 45 VCE = −2 V, IC = −3 A 90 hFE2 * Collector to emitter saturation voltage VCE(sat) IC = −10 A, IB = − 0.33 A Base to emitter saturation voltage VBE(sat) IC = −10 A, IB = − 0.33 A Transition frequency Typ Max Unit −50 µA −50 µA −20 V −40 2SB0948A Forward current transfer ratio Min fT 260 − 0.6 −1.5 V V VCE = −10 V, IC = − 0.5 A, f = 10 MHz 100 MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 400 pF Turn-on time ton IC = −3 A, IB1 = − 0.1 A, IB2 = 0.1 A 0.1 µs Storage time tstg 0.5 µs Fall time tf 0.1 µs Note) *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SB0948, 2SB0948A Power Transistors IC VCE 30 (1) 20 10 –60mA –50mA –8 –40mA –35mA –6 –25mA –4 –15mA –10mA –5mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 –12 100˚C 25˚C – 0.03 – 0.3 –1 –3 300 25˚C TC=100˚C 100 –25˚C 30 10 3 300 100 30 10 3 Cob VCB –1 –3 –10 –30 1 – 0.01 – 0.03 – 0.1 – 0.3 –100 ton, tstg, tf IC IE=0 f=1MHz TC=25˚C Switching time ton,tstg,tf (µs) 100 30 10 Pulsed tw=1ms Duty cycle=1% IC/IB=30 (–IB1=IB2) VCC=–20V TC=25˚C 3 –30 1 tstg 0.3 ton Non repetitive pulse TC=25˚C ICP t=1ms –10 IC 10ms –3 DC –1 – 0.3 0.1 tf – 0.1 0.03 0.01 –10 –30 –100 Collector to base voltage VCB (V) –10 Area of safe operation (ASO) – 0.03 –3 –3 –100 3 –1 –1 Collector current IC (A) 10 300 1 – 0.1 – 0.3 VCE=–10V f=10MHz TC=25˚C Collector current IC (A) 10000 –10 1000 1 – 0.1 – 0.3 –10 1000 –3 3000 Collector current IC (A) 3000 –1 VCE=–2V 3000 Collector current IC (A) – 0.01 – 0.1 – 0.3 Collector current IC (A) fT I C 1000 TC=–25˚C –1 – 0.01 – 0.1 10000 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –3 – 0.1 Collector output capacitance Cob (pF) –10 hFE IC IC/IB=30 – 0.3 2 –8 –25˚C Collector to emitter voltage VCE (V) VBE(sat) IC –10 –6 TC=100˚C 25˚C – 0.03 Transition frequency fT (MHz) 0 –1 – 0.1 –20mA (4) –3 – 0.3 –30mA –2 (2) (3) –80mA –10 IC/IB=30 0 –1 –2 –3 –4 –5 –6 –7 Collector current IC (A) –8 – 0.01 – 0.1 – 0.3 2SB0948A 40 TC=25˚C IB=–100mA –10 2SB0948 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) VCE(sat) IC –12 Collector to emitter saturation voltage VCE(sat) (V) PC T a 50 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Power Transistors 2SB0948, 2SB0948A Rth(t) t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR