Power Transistors 2SD1271, 2SD1271A Silicon NPN epitaxial planar type For power switching Complementary to 2SB0946 (2SB946) and 2SB0946A (2SB946A) Unit: mm ● 0.7±0.1 ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD1271 base voltage 2SD1271A Collector to 2SD1271 Ratings Unit 130 VCBO V 150 VEBO 7 V Peak collector current ICP 15 A Collector current IC 7 A dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics φ3.1±0.1 V 100 Emitter to base voltage Collector power TC=25°C 2.7±0.2 2.54±0.25 80 VCEO emitter voltage 2SD1271A 16.7±0.3 ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 5.5±0.2 4.0 ● 14.0±0.5 ● 10.0±0.2 Solder Dip ■ Features 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 100V, IE = 0 10 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 50 µA VCEO IC = 10mA, IB = 0 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 3A 90 Collector to emitter saturation voltage VCE(sat) IC = 5A, IB = 0.25A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 5A, IB = 0.25A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Collector to emitter 2SD1271 voltage 2SD1271A Forward current transfer ratio *h FE2 IC = 3A, IB1 = 0.3A, IB2 = – 0.3A, VCC = 50V 80 V 100 260 30 MHz 0.5 µs 1.5 µs 0.1 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 Note)The part numbers in the parenthesis show conventional part number. 1 Power Transistors 2SD1271, 2SD1271A IC — VCE 30 20 (2) 10 8 IB=55mA 50mA 45mA 40mA 6 35mA 30mA 4 20mA 15mA 2 10mA (3) (4) 5mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 VCE(sat) — IC 10 3 1 TC=100˚C 25˚C 0.1 –25˚C 0.03 0.3 1 3 Base to emitter saturation voltage VBE(sat) (V) 30 0.1 3 (1) (2) 1 0.3 0.1 0.03 0.01 0.1 10 0.3 hFE — IC 1 3 10 0.03 0.01 0.01 0.03 1000 TC=100˚C 25˚C 100 –25˚C 30 10 3 3 Collector current IC (A) 10 1 3 100 IC/IB=20 30 10 3 TC=–25˚C 1 100˚C 0.3 25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 Cob — VCB VCE=10V f=10MHz TC=25˚C IE=0 f=1MHz TC=25˚C 3000 1000 300 100 30 10 3 1 0.3 Collector current IC (A) 1000 300 0.1 10000 3000 3000 Transition frequency fT (MHz) Forward current transfer ratio hFE 0.1 fT — IC VCE=2V 2 (1) Collector current IC (A) 30 10000 0.3 (2) 0.3 Collector current IC (A) 10000 0.1 1 VBE(sat) — IC (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 Collector current IC (A) 1 0.01 0.03 3 VBE(sat) — IC IC/IB=20 0.01 0.01 0.03 12 (1) IC/IB=10 (2) IC/IB=20 TC=25˚C 10 Collector to emitter voltage VCE (V) 100 0.3 10 Collector output capacitance Cob (pF) 0 Base to emitter saturation voltage VBE(sat) (V) (1) 40 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) — IC 10 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 300 100 30 10 3 1 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) Power Transistors 2SD1271, 2SD1271A ton, tstg, tf — IC Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C ICP 3 tstg 1 ton 0.3 tf 0.1 0.03 10 IC 3 t=0.5ms 10ms 1 1ms 0.3 DC 0.1 0.03 0.01 0.01 0 1 2 3 4 5 6 7 8 1 Collector current IC (A) 3 10 30 2SD1271A 10 Non repetitive pulse TC=25˚C 30 Collector current IC (A) 30 Switching time ton,tstg,tf (µs) Area of safe operation (ASO) 100 2SD1271 100 100 300 1000 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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