Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1490 Unit: mm Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 140 V Emitter to base voltage VEBO 5 V Peak collector current ICP 12 A Collector current IC 7 A dissipation Ta=25°C 90 Tj Storage temperature Tstg W 3.5 150 ˚C –55 to +150 ˚C 2.0 2.0 1.5 2.0±0.3 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 1 PC Junction temperature 10.0 4.0 Parameter Collector power TC=25°C 26.0±0.5 (TC=25˚C) 1.5 Solder Dip ■ Absolute Maximum Ratings 1.5 ● Optimum for 80W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 20.0±0.5 2.5 ● 3.0 6.0 ■ Features ● φ 3.3±0.2 5.0±0.3 3.0 20.0±0.5 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C B E ■ Electrical Characteristics (TC=25˚C) Symbol Parameter ICBO Collector cutoff current max Unit VCB = 160V, IE = 0 100 µA Conditions min typ ICEO VCE = 140V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 30mA, IB = 0 140 hFE1 VCE = 5V, IC = 1A 2000 hFE2* VCE = 5V, IC = 6A 5000 Collector to emitter saturation voltage VCE(sat) IC = 6A, IB = 6mA Base to emitter saturation voltage VBE(sat) IC = 6A, IB = 6mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 IC = 6A, IB1 = 6mA, IB2 = –6mA, VCC = 50V V 30000 2.5 3.0 V V 20 MHz 2.5 µs 5.0 µs 2.5 µs Rank classification Rank hFE2 Q P 5000 to 15000 8000 to 30000 1 Power Transistors 2SD2250 PC — Ta IC — VCE VBE(sat) — IC 12 100 Base to emitter saturation voltage VBE(sat) (V) 200 150 100 10 Collector current IC (A) (1) 50 IB=5mA 8 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 6 4 0.3mA 0.2mA 2 (3) (2) 0.1mA 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 30 10 30000 1000 25˚C –25˚C 1 0.3 0.3 1 3 10 30 25˚C 300 –25˚C 100 30 10 0.01 0.03 100 1 3 10 Non repetitive pulse TC=25˚C Collector current IC (A) 30 tf 1 0.3 0.1 ICP 10 t=1ms 10ms IC DC 3 1 0.3 0.1 0.03 0.03 0.01 0.01 0 4 8 100˚C 25˚C 0.3 0.3 1 12 Collector current IC (A) 16 3 10 30 100 Collector current IC (A) 1 3 IE=0 f=1MHz TC=25˚C 300 100 30 10 3 10 30 100 300 1 3 10 30 100 Collector to base voltage VCB (V) Area of safe operation (ASO) ton 3 0.3 100 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=–IB2) VCC=50V TC=25˚C tstg 10 1 1 0.1 Collector current IC (A) ton, tstg, tf — IC 30 TC=–25˚C Cob — VCB 3000 TC=100˚C TC=100˚C 0.1 0.1 3 1000 10000 3 10 0.1 0.1 12 VCE=5V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 30 hFE — IC IC/IB=1000 100 Switching time ton,tstg,tf (µs) 8 100000 Collector current IC (mA) 2 6 IC/IB=1000 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 4 Collector output capacitance Cob (pF) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2250 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 100 (1) 10 (2) 1 0.1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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