Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 • High-speed switching • High collector to base voltage VCBO • Low collector to emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 0.7±0.1 ■ Features φ 3.1±0.1 Collector to base voltage 2SC3795 Collector to emitter voltage 2SC3795 Symbol Rating Unit VCBO 800 V 2SC3795A 0.5+0.2 –0.1 0.8±0.1 900 VCES 800 2SC3795A 2.54±0.3 V 5.08±0.5 900 Collector to emitter voltage VCEO 500 V Emitter to base voltage VEBO 8 V Peak collector current ICP 10 A Collector current IC 5 A Base current IB 3 A PC 40 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector power dissipation 1.3±0.2 1.4±0.1 Solder Dip (4.0) Parameter 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C TC = 25°C Ta = 25°C 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F Package 1 2 3 2 ■ Electrical Characteristics TC = 25°C Parameter Collector cutoff current Symbol 2SC3795 Collector to emitter voltage * Forward current transfer ratio Unit 100 µA VCB = 900 V, IE = 0 100 100 VCEO(sus) IC = 0.2 A, L = 25 mH 500 hFE1 VCE = 5 V, IC = 0.1 A 15 8 hFE2 VCE = 5 V, IC = 3 A IC = 3 A, IB = 0.6 A Base to emitter saturation voltage VBE(sat) IC = 3 A, IB = 0.6 A Transition frequency 2SC3795 fT VCE = 10 V, IC = 0.5 A, f = 1 MHz ton IC = 3 A, IB1 = 0.6 A, IB2 = − 0.6 A, 2SC3795A Storage time 2SC3795 VCC = 200 V µA V 1 1.5 8 V V MHz 1 µs 1.2 tstg 3 µs tf 1 µs 2SC3795A Note) *: VCEO(sus) Test circuit Max VEB = 5 V, IC = 0 VCE(sat) Fall time Typ IEBO Collector to emitter saturation voltage Turn-on time Min VCB = 800 V, IE = 0 2SC3795A Emitter cutoff current Conditions ICBO 1.2 50/60Hz mercury relay X L 25mH Y 120Ω 6V 1Ω 15V G 1 2SC3795, 2SC3795A Power Transistors PC T a IC VCE VCE(sat) IC TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 60 7 50 (1) 30 20 (2) 10 IB=1200mA 6 1000mA 800mA 5 600mA 4 400mA 300mA 3 200mA 150mA 2 100mA 50mA 20mA 1 (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 TC=–25˚C 100˚C 0.3 0.1 0.03 0.3 1 TC=100˚C 1 0.3 –25˚C 0.1 0.03 0.01 0.01 0.03 3 0.1 0.3 1 10 fT I C 300 100 TC=100˚C 25˚C 30 –25˚C 10 3 1 0.3 VCE=10V f=1MHz TC=25˚C 300 100 30 10 3 1 0.3 0.1 0.01 0.03 10 3 Collector current IC (A) Transition frequency fT (MHz) 3 0.1 25˚C 3 VCE=5V 10 1 10 1000 IC/IB=5 30 25˚C 30 hFE IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 10 1000 0.01 0.01 0.03 Collector current IC (A) 0.1 0.3 1 3 0.1 0.01 0.03 10 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) ton, tstg, tf IC Area of safe operation (ASO) Cob VCB 100 10000 Collector output capacitance Cob (pF) 8 IC/IB=5 Collector to emitter voltage VCE (V) VBE(sat) IC 100 IE=0 f=1MHz TC=25˚C 1000 300 100 30 10 10 1 tf 0.1 0.01 3 10 30 100 ICP t=0.5ms IC 3 1ms 10ms 1 DC 0.3 0.1 0.03 0.01 1 0.1 1 ton 0.3 0.03 Collector to base voltage VCB (V) 10 tstg 3 3 0.3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=–IB2) VCC=200V TC=25˚C 30 Switching time ton,tstg,tf (µs) 3000 2 6 Collector current IC (A) 0 100 2SC3795/2SC3795A 40 Collector to emitter saturation voltage VCE(sat) (V) 8 Collector current IC (A) Collector power dissipation PC (W) 80 Non repetitive pulse 0.003 TC=25˚C 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC3795, 2SC3795A Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 8 Lcoil=50µH IC/IB=5 (IB1=–IB2) TC=100˚C L coil 6 IB1 5 T.U.T –IB2 Vin 4 IC VCC 3 2SC3795A 2 2SC3795 Collector current IC (A) 7 1 0 0 Vclamp tW 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) t Thermal resistance Rth(t) (˚C/W) 1000 (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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