Power Transistors 2SD1750, 2SD1750A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB1180 and 2SB1180A Unit: mm 7.0±0.3 base voltage 2SD1750A +0.3 2.3±0.2 4.6±0.4 (TC=25˚C) Symbol 2SD1750 Ratings 60 VCBO 0.4±0.1 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 Unit V 80 7.0±0.3 3.5±0.2 2.0±0.2 2SD1750 emitter voltage 2SD1750A 60 VCEO 0 to 0.15 V 80 1.0 Collector to Unit: mm Peak collector current ICP 12 A Collector current IC 8 A 1.0 V 1.0 max. 7 7.2±0.3 VEBO 10.2±0.3 3.0±0.2 Emitter to base voltage 2.5±0.2 Parameter Collector to 0.85±0.1 0.75±0.1 2.5±0.2 ■ Absolute Maximum Ratings 1.1±0.1 1.0±0.2 ● High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0 –0. ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 2.5 Collector power TC=25°C dissipation Ta=25°C Junction temperature –55 to +150 ■ Electrical Characteristics Symbol 2SD1750 current 2SD1750A Emitter cutoff current ICBO IEBO Collector to emitter 2SD1750 voltage 2SD1750A Forward current transfer ratio 2.3±0.2 4.6±0.4 Conditions min 100 VEB = 7V, IC = 0 2 60 IC = 30mA, IB = 0 hFE1* VCE = 3V, IC = 4A 2000 500 VCE = 3V, IC = 8A IC = 4V, IB = 8mA Base to emitter saturation voltage VBE(sat) IC = 4V, IB = 8mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf hFE1 Q 2 Internal Connection P µA mA 10000 1.5 IC = 4A, IB1 = 8mA, IB2 = –8mA Unit V 80 VCE(sat) Rank max 100 VCEO Rank classification typ VCB = 80V, IE = 0 hFE2 FE1 1:Base 2:Collector 3:Emitter I Type Package (Y) VCB = 60V, IE = 0 Collector to emitter saturation voltage *h 3 (TC=25˚C) Parameter Collector cutoff 2 ˚C ˚C 0.9±0.1 0 to 0.15 1 150 Tstg 0.5 max. 1.1±0.1 W 1.3 Tj Storage temperature 0.75±0.1 15 PC V V 20 MHz 0.5 µs 4 µs 1 µs C B 2000 to 5000 4000 to 10000 E 1 Power Transistors 2SD1750, 2SD1750A PC — Ta IC — VCE 10 10 5 8 IB=4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 1.0mA 4 0.5mA 2 (2) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 4 5 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 Collector current IC (A) VBE(sat) — IC hFE — IC TC=100˚C 25˚C 3 –25˚C 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 3 1 25˚C 0.1 0.03 0.3 1 3 10 t=10ms IC 1ms 3 1 300ms 0.3 2SD1750 0.01 1 3 10 30 2SD1750A 0.1 0.03 100 300 Collector to emitter voltage VCE 300 100 30 1000 (V) 0.3 1 3 10 30 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) ICP –25˚C 10 0.1 30 103 10 25˚C 1000 0.3 Area of safe operation (ASO) Non repetitive pulse TC=25˚C TC=100˚C 3000 100˚C Collector current IC (A) 100 30 30000 10000 TC=–25˚C 0.01 0.1 30 VCE=3V IC/IB=500 10 Forward current transfer ratio hFE IC/IB=500 10 Base to emitter saturation voltage VBE(sat) (V) 100000 Collector current IC (A) Collector current IC (A) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25˚C (3) (2) (1) 10 Collector to emitter voltage VCE (V) VCE(sat) — IC 2 Collector to emitter saturation voltage VCE(sat) (V) (1) 15 TC=25˚C (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) — IC 12 Collector current IC (A) Collector power dissipation PC (W) 20 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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