2SD2592L, 2SD2592S Silicon NPN Triple Diffused Low Frequency Amplifier 1st. Edition December 1997 Target Specification Features • High voltage : V(BR)CEO = 300V min. Outline DPAK 4 4 1 2 1 2 3 3 1. Base 2. Collector 3. Emitter 4. Collector 2SD2592L, 2SD2592S Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to Base voltage VCBO 300 V Collector to Emitter voltage VCEO 300 V Emitter to Base voltage VEBO 5 V Collector current IC 0.15 A Collector peak current I C(peak) 0.6 A 10 W Note1 Collector power dissipation Pc Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown voltage V(BR)CEO 300 — — V I C = 1mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10mA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 300V, IE = 0 Emitter cutoff current I EBO — — 10 µA VEB = 4V, IC = 0 DC current transfer ratio hFE1 60 — 200 VCE = 1.5V, IC = 20mA DC current transfer ratio hFE2 60 — — VCE = 5V, IC = 100mA Collector to emitter saturation VCE(sat) voltage — — 1.0 I C = 100mA, IB = 5mA Base to emitter saturation voltage VBE(sat) — — 1.5 I C = 100mA, IB = 5mA Gain bandwidth product fT — 16 — 2 MHz VCE = 1.5A, IC = 20mA 2SD2592L, 2SD2592S Package Dimensions 2.3 ± 0.5 0.55 ± 0.1 9.5 ± 0.5 1.2 Max 16.2 ± 0.5 3.1 ± 0.5 0.8 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 1.15 ± 0.1 1.7 ± 0.5 2.3 ± 0.5 0.55 ± 0.1 7.2 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 Unit: mm 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 L type 1.5 Max 2.29 ± 0.5 2.5 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 S type 0 ~ 0.25 0.55 ± 0.1 Hitachi Code EIAJ ( L type) EIAJ ( S type) JEDEC DPAK SC–63 SC–64 — 3 2SD2592L, 2SD2592S When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright © Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 4