ETC D721S

European PowerSemiconductor and
Electronics Company
Marketing Information
D 721 S
C
ø3,5±
A
0,1
4875-0,2
Applikation: Freilaufdiode in Spannungszwischenkreisumrichter
bis VD(DC) = 2000 V
VWK January
Schnelle Gleichrichterdiode
Fast Diode
D 721 S 45 T
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
3500 V, 4000 V
tvj = -40°C...125°C
VRRM
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
tvj = +25°C...125°C
Durchlaßstrom-Grenzeffektivwert / RMS forward current
Dauergrenzstrom / mean forward current
4500 V
3600 V, 4100 V
tC = 85°C
VRSM
4600 V
IFRMSM
1700 A
IFAVM
tC = 52°C
Stoßstrom-Grenzwert1)
tvj = 25°C
surge forward current1)
tvj = 125°C
Grenzlastintegral
tvj = 25°C
I²t-value
tvj = 125°C
Kritische periodische Ausschaltstromsteilheit
tvj = 125°C, IFM = 2000 A, VR = 3000 V
critical repetitive rate of fall of on - state
C = 0,25 µF, R = 6Ω
720 A
1080 A
IFSM
16000 A
15000 A
I²t
1,3x106 A²s
1,13x106 A²s
(-di/dt)com
500 A/µs
Charakteristische Werte / Characteristic values
Gleichsperrspannung / cont. direct reverse voltage
tc = -40°C ... +85°C
VR(D)
Durchlaßspannung / forward voltage
tvj = 125°C iFM = 2500 A
VF
Schleusenspannung / threshold voltage
tvj = 125°C
V(TO)
Ersatzwiderstand / forward slope resistance
tvj = 125°C
rT
0,69 mΩ
Sperrstrom / reverse current
tvj = 125°C, vR = 0,67 VRRM
iR
ca. 75 mA
iFM = 1000 A, -diF/dt = 250 A/µs
3,5 V
1,7 V
140 mA 1)
tvj = 125°C, vR = VRRM
Rückstromspitze / peak reverse recovery current
typ. 2000 V
IRM
600 A
tvj = 125 °C; vR = 1000 V;
C = 0,25 µF; R = 6Ω
Sperrverzögerungsladung
iFM = 1000 A, -diF/dt = 250 A/µs
recovered charge
tvj = 125 °C; vR = 1000 V;
Qrr
1700 µAs
C = 0,25 µF; R = 6Ω
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
Kühlfläche / cooling surface
thermal resistance, junction to case
beidseitig / two-sided
RthJC
0,018 K/W
Anoden / anode
0,033 K/W
Kathode / cathode
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Kühlfläche / cooling surface
0,04 K/W
RthCK
beidseitig / two-sided
0,005 K/W
einseitig / single-sided
0,01 K/W
Höchstzul. Sperrschichttemp. / max. junction temperat.
tvjmax
Betriebstemperatur / operating temperature
tc op
-40...+125 °C
125 °C
Lagertemperatur / storage temperature
tstg
-40...+150 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage / case, see appendix
Seite / page 1
Anpreßkraft /clamping force
F
15...36 kN
Gewicht / weight
G
ca. 600 g
Luftstrecke / air distance
ca. 20 mm
Kriechstrecke / creepage distance
30 mm
Feuchteklasse / humidity classification
DIN 40040
Schwingfestigkeit / vibration resistance
f = 50 Hz
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt
in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the
belonging technical notes.
1) Richtwert für obere Streubereichsgrenze / Upper limit of scatter range (standart value)
C
50 m/s²
D 721 S
4000
4000
100%
90% 80% 70%
60%
50%
3500
PFAV
[W]
3000
iF
[A]
3000
40%
2500
30%
2000
2000
1500
1000
20%
1000
10%
500
5%
0
1,0
1,5
2,0
2,5
3,0
3,5
vF [V]
4,0
0
4,5
500
1000
D 721 S_01
D 721 S_02
Fig. 1
On-state characteristic iF = f(VF)
Fig. 2
On-state losses (average values)
IF = f(PFAV)
tvj = 125°C
Upper limit of scatter range
1500
2000
IF [A]
tvj = 125 °C
Lower limit of scatter range
0,06
Analytical elements of transient thermal impedance ZthJC for DC
0,05
ZthJC
[K/W]
3
0,04
2
1
2
3
4
5
Σ
1. ZthJC
τ [s]
r [K/W]
0,00637 1,80000
0,00904 0,14000
0,00267 0,01410
0,00080 0,00265
0,00012 0,00067
0,00180
-
2. ZthJC
τ [s]
r [K/W]
0,02137 8,00000
0,00904 0,14000
0,00167 0,01410
0,00080 0,00265
0,00012 0,00067
0,03300
-
0,03
Analytical function:
nmax
0,02
1
0,01
0
0,001
2 34 68
0,01
2 34 68
2 34 68
0,1
2 34 68
1
D 721 S_03
Fig. 3
Transient thermal impedance
1 - Two-sided cooling
2 - Anode-sided cooling
3 - Cathode-sided cooling
ZthJC = f(t), DC
10
t [s]
2 34 68
100
ZthJC =
ΣR
thn
n=1
(1-EXP(-t/τn))
3. ZthJC
τ [s]
r [K/W]
0,02837 6,80000
0,00904 0,14000
0,00167 0,01410
0,00080 0,00265
0,00012 0,00067
0,04000
-
2500
D 721 S
0,008
100
f = 50Hz
8
6
0,007
∆rth
[K/W]
0,006
5
4
IFSM
[kA]
3
2
f = 60Hz
0,005
0,004
10
f = 100Hz
8
6
0,003
5
4
IFSM
3
1
T=
Hz
50
0,002
f = 200Hz
tp
2
0,001
f = 500Hz
Sine half wave 50Hz
1
0,1
2
3 4 56 8
2
3 4 56 8
1
2
3 4 56 8
1
0
10
10
20
30
40
50
60
70
80
ED [%]
λ [°el]
tp [ms]
D 721 S_05
D 721 S_04
Fig. 4
Surge Current IFSM = f(tp)
IFSM = f(Sine half wave)
Fig. 5
∆ rth = f(ED, Frequency)
1000
3000A
2000A
1000A
600A
300A
100A
9
7
5
IRM
[A]
IRM
[A]
5
4
3
3
2
2
100
9
9
7
7
5
5
4
4
3
3
IFM
2
IFM
Qrr
2
-di/dt
2
3
4
5 6 7 89
2
3
4
5 6 7 89
100
1000
Qrr
-di/dt
VR
IRM
10
10
3000A
2000A
1000A
600A
300A
100A
9
7
4
100
100
Two-sided cooling
Current wave form: square wave
Parameter: frequency
tvj = 125°C
VR = 0
1000
90
VR
IRM
10
10
2
3
4
5 6 7 89
-di/dt [A/µs]
2
3
4
100
5 6 7 89
1000
-di/dt [A/µs]
D 721 S_06
D 721 S_07
Fig. 6
Reverse recovery current (upper-limit, ca. 98% values)
Application: GTO-freewheeling diode
Fig. 7
Reverse recovery current (lower-limit, ca. 2% values)
Application: GTO-freewheeling diode
Parameter: IFM
tvj ≤ 125°C; CS ≥ 4µF
RS = 0 Ω; VR > 2000 V ... 3000 V
Parameter: IFM
tvj ≤ 125°C; CS ≥ 4µF, Diode D291S
RS = 0 Ω; VR > 2000 V ... 3000 V
D 721 S
1000
1000
9
7
5
5
Qrr
[µAs]
4
Qrr
[µAs]
IFM = 3000A
2000A
1000A
600A
300A
100A
3
2
100
9
7
Qrr
-di/dt
4
VR
IRM
3
2
100
9
7
5
5
4
4
3
IFM = 3000A
2000A
1000A
600A
300A
100A
9
7
3
IFM
2
Qrr
2
-di/dt
VR
IRM
10
10
IFM
2
3
4
5 6 7 89
2
3
4
5 6 7 89
100
1000
10
10
2
3
4
5 6 7 8 9
3
4
1000
-di/dt [A/µs]
D 721 S_08
D 721 S_09
Fig. 8
Reverse recovery charge (upper limit, ca. 98% values)
Fig. 9
Reverse recovery charge (lower limit, ca. 2% values)
Application: GTO-freewheeling diode
Application: GTO-freewheeling diode
Parameter: IFM
Parameter: IFM
tvj ≤ 125°C; CS ≥ 4µF
RS = 0 Ω; VR > 2000 V ... 3000 V
tvj ≤ 125°C; CS ≥ 4µF
RS = 0 Ω; VR > 2000 V ... 3000 V
10
9
3000A
7
9
IFM = 3000A
7
1000A
1000A
5
Eoff
[Ws]
5 6 7 89
100
-di/dt [A/µs]
10
2
600A
Eoff
[Ws]
4
300A
3
600A
5
4
300A
3
2
2
100A
100A
1
1
9
9
7
7
5
5
4
4
3
IFM
3
Qrr
VR(Spr)
-di/dt
2
IRM
0,1
10
2
3
4
5 6 7 89
2
IFM
2
VR
3
4
100
VR(Spr)
IRM
5 6 7 8 9
1000
0,1
10
2
3
4
5 6 7 89
3
4
5 6 7 89
1000
-di/dt [A/µs]
D 721 S_13
D 721 S_11
Fig. 10
Turn-off-losses Eoff = f(di/dt)
diodes with VFmax
Application: GTO-freewheeling diode
Fig. 11
Turn-off-losses Eoff = f(di/dt)
diodes with VFmax
Application: GTO-freewheeling diode
VR(Spr) = 3000 V
VR(Spr) = 2000 V
2
VR
100
-di/dt [A/µs]
Parameter:IFM; Snubberdiode D 291 S
tvj = 125°C; CS = 6 µF für vR ≤ VRM
CS = 36 µF für vR ≥ VRM
LS = 0,2 µH
Qrr
-di/dt
Parameter:IFM; Snubberdiode D 291 S
tvj = 125°C; CS = 4 µF für vR ≤ VRM
CS = 24 µF für vR ≥ VRM
LS = 0,2 µH
VR(Spr) = 3000 V
VR(Spr) = 2000 V
D 721 S
10
IFM =
9
60
3000A
1000A
7
600A
5
50
VFRM
[V]
300A
4
Eoff
[Ws]
3
1
40
100A
2
30
9
7
5
20
4
3
IFM
Qrr
VFRM
VR(Spr)
-di/dt
2
IRM
0,1
10
2
3
4
5
6
7 8 9
2
10
VR
3
4
100
5
6
7 8 9
1000
0
100
200
300
400
-di/dt [A/µs]
D 721 S_12
D 721 S_10
Fig. 12
Turn-off-losses Eoff = f(di/dt)
diodes with VFmax
Application: GTO-freewheeling diode
Fig. 13
Peak Forward Recovery Voltage
(typical values)
Parameter:IFM; Snubberdiode D 291 S
tvj = 125°C; CS = 4 µF für vR ≤ VRM
CS = 24 µF für vR ≥ VRM
LS = 0,2 µH
Parameter: tvj
tvj = 125°C
tvj = 25°C
500
600
di/dt [A/µs]
700
800