European PowerSemiconductor and Electronics Company Marketing Information D 721 S C ø3,5± A 0,1 4875-0,2 Applikation: Freilaufdiode in Spannungszwischenkreisumrichter bis VD(DC) = 2000 V VWK January Schnelle Gleichrichterdiode Fast Diode D 721 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage 3500 V, 4000 V tvj = -40°C...125°C VRRM Stoßspitzensperrspannung non-repetitive peak reverse voltage tvj = +25°C...125°C Durchlaßstrom-Grenzeffektivwert / RMS forward current Dauergrenzstrom / mean forward current 4500 V 3600 V, 4100 V tC = 85°C VRSM 4600 V IFRMSM 1700 A IFAVM tC = 52°C Stoßstrom-Grenzwert1) tvj = 25°C surge forward current1) tvj = 125°C Grenzlastintegral tvj = 25°C I²t-value tvj = 125°C Kritische periodische Ausschaltstromsteilheit tvj = 125°C, IFM = 2000 A, VR = 3000 V critical repetitive rate of fall of on - state C = 0,25 µF, R = 6Ω 720 A 1080 A IFSM 16000 A 15000 A I²t 1,3x106 A²s 1,13x106 A²s (-di/dt)com 500 A/µs Charakteristische Werte / Characteristic values Gleichsperrspannung / cont. direct reverse voltage tc = -40°C ... +85°C VR(D) Durchlaßspannung / forward voltage tvj = 125°C iFM = 2500 A VF Schleusenspannung / threshold voltage tvj = 125°C V(TO) Ersatzwiderstand / forward slope resistance tvj = 125°C rT 0,69 mΩ Sperrstrom / reverse current tvj = 125°C, vR = 0,67 VRRM iR ca. 75 mA iFM = 1000 A, -diF/dt = 250 A/µs 3,5 V 1,7 V 140 mA 1) tvj = 125°C, vR = VRRM Rückstromspitze / peak reverse recovery current typ. 2000 V IRM 600 A tvj = 125 °C; vR = 1000 V; C = 0,25 µF; R = 6Ω Sperrverzögerungsladung iFM = 1000 A, -diF/dt = 250 A/µs recovered charge tvj = 125 °C; vR = 1000 V; Qrr 1700 µAs C = 0,25 µF; R = 6Ω Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand Kühlfläche / cooling surface thermal resistance, junction to case beidseitig / two-sided RthJC 0,018 K/W Anoden / anode 0,033 K/W Kathode / cathode Übergangs-Wärmewiderstand thermal resistance, case to heatsink Kühlfläche / cooling surface 0,04 K/W RthCK beidseitig / two-sided 0,005 K/W einseitig / single-sided 0,01 K/W Höchstzul. Sperrschichttemp. / max. junction temperat. tvjmax Betriebstemperatur / operating temperature tc op -40...+125 °C 125 °C Lagertemperatur / storage temperature tstg -40...+150 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage / case, see appendix Seite / page 1 Anpreßkraft /clamping force F 15...36 kN Gewicht / weight G ca. 600 g Luftstrecke / air distance ca. 20 mm Kriechstrecke / creepage distance 30 mm Feuchteklasse / humidity classification DIN 40040 Schwingfestigkeit / vibration resistance f = 50 Hz Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 1) Richtwert für obere Streubereichsgrenze / Upper limit of scatter range (standart value) C 50 m/s² D 721 S 4000 4000 100% 90% 80% 70% 60% 50% 3500 PFAV [W] 3000 iF [A] 3000 40% 2500 30% 2000 2000 1500 1000 20% 1000 10% 500 5% 0 1,0 1,5 2,0 2,5 3,0 3,5 vF [V] 4,0 0 4,5 500 1000 D 721 S_01 D 721 S_02 Fig. 1 On-state characteristic iF = f(VF) Fig. 2 On-state losses (average values) IF = f(PFAV) tvj = 125°C Upper limit of scatter range 1500 2000 IF [A] tvj = 125 °C Lower limit of scatter range 0,06 Analytical elements of transient thermal impedance ZthJC for DC 0,05 ZthJC [K/W] 3 0,04 2 1 2 3 4 5 Σ 1. ZthJC τ [s] r [K/W] 0,00637 1,80000 0,00904 0,14000 0,00267 0,01410 0,00080 0,00265 0,00012 0,00067 0,00180 - 2. ZthJC τ [s] r [K/W] 0,02137 8,00000 0,00904 0,14000 0,00167 0,01410 0,00080 0,00265 0,00012 0,00067 0,03300 - 0,03 Analytical function: nmax 0,02 1 0,01 0 0,001 2 34 68 0,01 2 34 68 2 34 68 0,1 2 34 68 1 D 721 S_03 Fig. 3 Transient thermal impedance 1 - Two-sided cooling 2 - Anode-sided cooling 3 - Cathode-sided cooling ZthJC = f(t), DC 10 t [s] 2 34 68 100 ZthJC = ΣR thn n=1 (1-EXP(-t/τn)) 3. ZthJC τ [s] r [K/W] 0,02837 6,80000 0,00904 0,14000 0,00167 0,01410 0,00080 0,00265 0,00012 0,00067 0,04000 - 2500 D 721 S 0,008 100 f = 50Hz 8 6 0,007 ∆rth [K/W] 0,006 5 4 IFSM [kA] 3 2 f = 60Hz 0,005 0,004 10 f = 100Hz 8 6 0,003 5 4 IFSM 3 1 T= Hz 50 0,002 f = 200Hz tp 2 0,001 f = 500Hz Sine half wave 50Hz 1 0,1 2 3 4 56 8 2 3 4 56 8 1 2 3 4 56 8 1 0 10 10 20 30 40 50 60 70 80 ED [%] λ [°el] tp [ms] D 721 S_05 D 721 S_04 Fig. 4 Surge Current IFSM = f(tp) IFSM = f(Sine half wave) Fig. 5 ∆ rth = f(ED, Frequency) 1000 3000A 2000A 1000A 600A 300A 100A 9 7 5 IRM [A] IRM [A] 5 4 3 3 2 2 100 9 9 7 7 5 5 4 4 3 3 IFM 2 IFM Qrr 2 -di/dt 2 3 4 5 6 7 89 2 3 4 5 6 7 89 100 1000 Qrr -di/dt VR IRM 10 10 3000A 2000A 1000A 600A 300A 100A 9 7 4 100 100 Two-sided cooling Current wave form: square wave Parameter: frequency tvj = 125°C VR = 0 1000 90 VR IRM 10 10 2 3 4 5 6 7 89 -di/dt [A/µs] 2 3 4 100 5 6 7 89 1000 -di/dt [A/µs] D 721 S_06 D 721 S_07 Fig. 6 Reverse recovery current (upper-limit, ca. 98% values) Application: GTO-freewheeling diode Fig. 7 Reverse recovery current (lower-limit, ca. 2% values) Application: GTO-freewheeling diode Parameter: IFM tvj ≤ 125°C; CS ≥ 4µF RS = 0 Ω; VR > 2000 V ... 3000 V Parameter: IFM tvj ≤ 125°C; CS ≥ 4µF, Diode D291S RS = 0 Ω; VR > 2000 V ... 3000 V D 721 S 1000 1000 9 7 5 5 Qrr [µAs] 4 Qrr [µAs] IFM = 3000A 2000A 1000A 600A 300A 100A 3 2 100 9 7 Qrr -di/dt 4 VR IRM 3 2 100 9 7 5 5 4 4 3 IFM = 3000A 2000A 1000A 600A 300A 100A 9 7 3 IFM 2 Qrr 2 -di/dt VR IRM 10 10 IFM 2 3 4 5 6 7 89 2 3 4 5 6 7 89 100 1000 10 10 2 3 4 5 6 7 8 9 3 4 1000 -di/dt [A/µs] D 721 S_08 D 721 S_09 Fig. 8 Reverse recovery charge (upper limit, ca. 98% values) Fig. 9 Reverse recovery charge (lower limit, ca. 2% values) Application: GTO-freewheeling diode Application: GTO-freewheeling diode Parameter: IFM Parameter: IFM tvj ≤ 125°C; CS ≥ 4µF RS = 0 Ω; VR > 2000 V ... 3000 V tvj ≤ 125°C; CS ≥ 4µF RS = 0 Ω; VR > 2000 V ... 3000 V 10 9 3000A 7 9 IFM = 3000A 7 1000A 1000A 5 Eoff [Ws] 5 6 7 89 100 -di/dt [A/µs] 10 2 600A Eoff [Ws] 4 300A 3 600A 5 4 300A 3 2 2 100A 100A 1 1 9 9 7 7 5 5 4 4 3 IFM 3 Qrr VR(Spr) -di/dt 2 IRM 0,1 10 2 3 4 5 6 7 89 2 IFM 2 VR 3 4 100 VR(Spr) IRM 5 6 7 8 9 1000 0,1 10 2 3 4 5 6 7 89 3 4 5 6 7 89 1000 -di/dt [A/µs] D 721 S_13 D 721 S_11 Fig. 10 Turn-off-losses Eoff = f(di/dt) diodes with VFmax Application: GTO-freewheeling diode Fig. 11 Turn-off-losses Eoff = f(di/dt) diodes with VFmax Application: GTO-freewheeling diode VR(Spr) = 3000 V VR(Spr) = 2000 V 2 VR 100 -di/dt [A/µs] Parameter:IFM; Snubberdiode D 291 S tvj = 125°C; CS = 6 µF für vR ≤ VRM CS = 36 µF für vR ≥ VRM LS = 0,2 µH Qrr -di/dt Parameter:IFM; Snubberdiode D 291 S tvj = 125°C; CS = 4 µF für vR ≤ VRM CS = 24 µF für vR ≥ VRM LS = 0,2 µH VR(Spr) = 3000 V VR(Spr) = 2000 V D 721 S 10 IFM = 9 60 3000A 1000A 7 600A 5 50 VFRM [V] 300A 4 Eoff [Ws] 3 1 40 100A 2 30 9 7 5 20 4 3 IFM Qrr VFRM VR(Spr) -di/dt 2 IRM 0,1 10 2 3 4 5 6 7 8 9 2 10 VR 3 4 100 5 6 7 8 9 1000 0 100 200 300 400 -di/dt [A/µs] D 721 S_12 D 721 S_10 Fig. 12 Turn-off-losses Eoff = f(di/dt) diodes with VFmax Application: GTO-freewheeling diode Fig. 13 Peak Forward Recovery Voltage (typical values) Parameter:IFM; Snubberdiode D 291 S tvj = 125°C; CS = 4 µF für vR ≤ VRM CS = 24 µF für vR ≥ VRM LS = 0,2 µH Parameter: tvj tvj = 125°C tvj = 25°C 500 600 di/dt [A/µs] 700 800