DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 12 W min. with 12 dB gain over 875 - 915 MHz • 10:1 LOAD VSWR CAPABILITY • BeO FREE AMPLIFIER. DESCRIPTION The DB-915-12W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed as booster for GSM-R applications. The DB-915-12W is designed in cooperation with Européenne de Télécommunications S.A (www.etsa.fr), for high gain and broadband performance operating in common source mode at 12 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ORDER CODE DB-915-12W MECHANICAL SPECIFICATION L=60 mm W=30 mm H=10 mm ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol Parameter Value Unit VDD Supply voltage 18 V ID Drain Current 4.5 A PDISS Power Dissipation at TCASE = +85 °C 67 W TCASE Operating Case Temperature -20 to +85 oC Tamb Max. Ambient Temperature November, 20 2002 +55 o C 1/5 DB-915-12W ELECTRICAL SPECIFICATION (Tamb = +25 oC, Vdd = 26 V, Idq = 150 mA) Symbol FREQ. Frequency Range Gain POUT = 12 W P1dB Over frequency range: 875 - 915 MHz Flatness Over frequency range and @ POUT = 12 W Flatness POUT from 0.1 W to 60 W ND at P1dB IRTL Harmonic VSWR Spurious IMD3 2/5 Test Conditions P1dB Min. Typ. 875 11 45 Max. Unit 915 MHz 12 dB 12 W +/- 0.5 dB 1 dB 50 % Input return Loss POUT from 0.1 W to 12W -6 dB POUT = 12 W -30 dBc 10:1 VSWR all phases and POUT from 0.1 to 12 W -76 dBc POUT = 12 WPEP -25 dBc Load Mismatch all phases @ POUT = 12 W 10:1 DB-915-12W TYPICAL PERFORMANCE Output Power vs. Frequency Power Gain vs. Frequency 16 24 22 15 20 14 Pin = 25 dBm 18 12 Pout (W) Gp (dB) P in = 31 dB m 16 13 Pin = 28 dBm 11 14 12 P in = 28 dB m 10 Pin = 31 dB m 8 10 Vcc = 12.5 V Idq = 150 m A 9 6 P in = 25 dB m 4 8 Vc c = 12.5 V Idq = 150 m A 2 865 875 885 895 905 915 925 865 875 885 f (MHz) 895 905 915 925 f (MHz ) Drain Current vs. Frequency Input Return Loss vs. Frequency 4.0 0 3.5 -2 3.0 -4 P in = 31 dB m P in = 31 dB m -6 2.0 RL (dB) Id (A) 2.5 P in = 28 dB m -8 P in = 25 dB m 1.5 -10 P in = 25 dB m 1.0 -12 0.5 -14 P in = 28 dB m Vc c = 12.5 V Idq = 150 m A 0.0 Vc c = 12.5 V Idq = 150 m A -16 865 875 885 895 905 915 925 f (MHz) 865 875 885 895 905 915 925 f (MHz) Output Power vs. Frequency 18 16 14 Vdd = 15.6 V Pout (W) 12 Vdd = 12.5 V 10 Vdd = 10.8 V 8 6 4 P in = 28 dB m Idq = 150 m A 2 865 875 885 895 905 915 925 f (MHz ) 3/5 DB-915-12W TEST FIXTURE COMPONENT LAYOUT TEST CIRCUIT PHOTOMASTER TEST CIRCUIT COMPONENT PART LIST Ref. V alu e Ref. Manu facturer 1 RF Pow er Am plifier Circuit PC IR50 1003 ETSA CV1, C V2 Trim cap acitor HQ 0.6 -4 .5pF 500 V AT27273 TECK M anufacturer C4 C hip Capa cito r H Q 060 3 100p F TA 5% 5 0V 50 0-C HA-101-JVLE TEKELEC C 10 Chip Cap acitor HQ 5 .6pF TB +/- 0,25pF 5 00V 501 -C HB-3R3-C VLE TEKELEC C 12 Chip Cap acitor HQ 4 .7pF TB +/- 0,25pF 5 00V 501 -C HB-8R2-C VLE TEKELEC C5, C 7,C9 C13 Chip Capa citor HQ 10 pF TB 5% 500V 50 1-C HB-100-JVLE TEKELEC C 6, C 8 Chip Capa citor HQ 47 pF TB 5% 500V 50 1-C HB-470-JVLE TEKELEC C3 Chip Capa cito r HQ 100 pF TB 5 % 500V 50 1-C HB-101-JVLE TEKELEC C2 Capa cito r 1206 10 0nF 63V X7R 1 0% VJ1 206Y104KXAT/63 0 VISH AY C1 Capa citor CM S tantale 1µ F 20% 35 V 293 D105X903 5B Vishay-Spragu e R1 Resisto r C M S 4 ,7K 1206 1 /4W 5% 27597 BOUR NS R2 Resistor CM S 10K 1206 1/4W 5% 27605 BOUR NS P1 Trim resistor CM S ce rm et 3224W 10 K 3224 W-103 BOUR NS D1 T1 Zener Diode 5 .1V 500m W SOD 80 RF LDM OS Transistor 12V 15W TEFLON-GLASS Er = 2.55 , THK = 0.762 mm , C OPPER FLANGE 2 m m THIC KN ESS BZV55C 5V1 PD5 5015S OM N ITEC H STM icro électronics M X3 -3 0-C1/10 C M ETCLAD BOAR D 4/5 DB-915-12W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5