DB-960-70W 70W / 26V / 925-960 MHz PA using 2x PD57045S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W min. with 13 dB gain over 925-960 MHz • 10:1 LOAD VSWR CAPABILITY • BeO FREE AMPLIFIER. DESCRIPTION The DB-960-70W is a common source N-Channel enhancement-mode lateral Field-Effect RF power amplifier designed for GSM & E-GSM base station applications. The DB-960-70W is designed in cooperation with Européenne de Télécommunications S.A (www.etsa.fr), for high gain and broadband performance operating in common source mode at 26 V, capable of withstanding load mismatch up to 10:1 all phases and with harmonics lower than 30 dBc. ORDER CODE DB-960-70W MECHANICAL SPECIFICATION L=80 mm W=50 mm H=10 mm ABSOLUTE MAXIMUM RATINGS (TCASE = 25oC) Symbol Parameter Value Unit VDD Supply voltage 32 V ID Drain Current 9 A 135 W PDISS Power Dissipation TCASE Operating Case Temperature Pamb Max. Ambient Temperature November, 20 2002 -20 to +85 o +55 o C C 1/5 DB-960-70W ELECTRICAL SPECIFICATION (Tamb = +25oC, Vdd = 26V, Idq = 2 x 200mA) Symbol Test Conditions FREQ. Min. Typ. Max. Unit 960 MHz Frequency Range 925 Gain POUT = 75 W 12.5 13 dB P1dB Over frequency range: 925 - 960 MHz 70 75 W Flatness Over frequency range and @ POUT = 75 W Flatness POUT from 0.1W to 75W ND at P1dB P1dB IRTL Harmonic 45 Spurious IMD3 dB 1 dB 50 % Input return Loss POUT from 0.1W to 75W -20 -15 dB POUT = 75 W -40 -30 dBc 10:1 VSWR all phases and POUT from 0.1 to 75W -76 dBc POUT = 75 WPEP -25 dBc Load Mismatch all phases @ POUT = 75 W VSWR +/- 0.5 TYPICAL PERFORMANCE Output Power versus Input Power 10:1 Power Gain versus Frequency (Pout = 75W) Pout (W) Gp (dB) 120 15 960 MHz 100 14 940 MHz 80 920 MHz 13 60 12 40 11 20 Vdd = 26 V Idq = 2 x 200 mA Vdd = 26 V Idq = 2 x 200 mA 0 0 2 4 6 10 910 8 Pin (W) P1dB (W) Nd (%) 120 80 100 70 P1dB 80 60 Eff. 60 50 40 40 Vdd = 26 V Idq = 2 x 200 mA 920 930 940 F (MHz) 2/5 930 940 F (MHz) P1dB and Efficiency versus Frequency 20 910 920 950 960 30 970 950 960 970 DB-960-70W TEST FIXTURE COMPONENT LAYOUT CV1 CV2 Ref. ETSA c07/2000 - Ed1 TEST CIRCUIT PHOTOMASTER Ref. ETSA c07/2000 - Ed1 3/5 DB-960-70W TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION T1, T2 PD57045S TRANSISTOR C1, C2, C23, C24 47pF - 500V CERAMIC CHIP CAPACITOR C3, C4 2.2pF - 500V CERAMIC CHIP CAPACITOR C5, C6, C17, C18 100pF - 500V CERAMIC CHIP CAPACITOR C7, C8, C9, C10, C11, C12, C13, C14 10pF - 500V CERAMIC CHIP CAPACITOR C15, C16 100nF - 63V CERAMIC CHIP CAPACITOR C19, C20 1µF / 35V ELECTROLYTIC CAPACITOR C21, C22 4.7pF - 500V CERAMIC CHIP CAPACITOR C26, C27 3.3pF - 500V CERAMIC CHIP CAPACITOR C25 0.5pF - 500V CERAMIC CHIP CAPACITOR CV1, CV2 ADJUSTABLE CAPACITOR 0.6 - 4.5pF / 500V P1, P2 10K Ohms MULTITURN POTENTIOMETER R1,R7 100 Ohms 1/4W 1206 SMD CHIP RESISTOR R2 50 Ohms 30W - 4GHz LOAD R3, R4 4.7K Ohms 1/4W 1206 SMD CHIP RESISTOR R5, R6 10K Ohms 1/4W 1206 SMD CHIP RESISTOR D1, D2 ZENER DIODE 5V - 500 mW SOD80 SM1, SM2 90° SMD HYBRID COUPLER ANAREN Xinger 1304-3 BOARD METCLAD MX3-30-C1/10C THK 0.762 mm Cu 35µ SUBSTRATE TEFLON-GLASS Er = 2.55 BACK SIDE COPPER FLANGE 2 mm THICKNESS CERAMIC CHIP CAPACITORS ATC100B or EQUIVALENT 4/5 DB-960-70W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5