ETC 2SC5304

Ordering number:EN5883
NPN Triple Diffused Planar Silicon Transistor
2SC5304
Inverter Lighting Applications
Features
Package Dimensions
· High breakdown voltage (VCBO=1000V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
unit:mm
2079B
[2SC5304]
4.5
10.0
2.8
0.6
16.1
16.0
7.2
3.5
3.2
0.7
14.0
3.6
0.9
1.2
0.75
2
1:Base
2:Collector
3:Emitter
3
2.4
1
2.55
2.55
SANYO:TO-220FI (LS)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1000
V
Collector-to-Emitter Voltage
VCEO
VEBO
450
V
9
V
IC
7
A
Collector Current (pulse)
ICP
14
A
Collector Dissipation
PC
2
W
Junction Temperature
Tj
Storage Temperature
Tstg
Emitter-to-Base Voltage
Collector Current
35
W
150
˚C
–55 to +150
˚C
Tc=25˚C
Electrical Characteristics at Ta=25˚C
Parameter
Symbol
Conditons
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=450V, IE=0
10
µA
Collector Cutoff Current
ICES
VCE=1000V, RBE=0
1.0
mA
1.0
mA
1.0
V
1.5
V
Collector Saturation Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Storage Time
Fall Time
VCEO(sus) IC=100mA, IB=0
IEBO
VEB=9V, IC=0
VCE(sat) IC=3.5A, IB=0.7A
VBE(sat)
hFE1
hFE2
tstg
tf
IC=3.5A, IB=0.7A
VCE=5V, IC=0.3A
VCE=5V, IC=3.0A
IC=3.5A, IB1=0.7A, IB2=–1.4A
IC=3.5A, IB1=0.7A, IB2=–1.4A
450
30
V
40
50
10
2.5
µs
0.15
µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61598TS (KOTO) TA-1238 No.5883-1/3
2SC5304
Switching Time Test Circuit
RC
IB1
IB2
IB1
VOUT
VCC
IB2
0.9 VOUT
VOUT
0.1 VOUT
tstg
I C – VCE
1.8A
1.6A
VCE =5V
6
0.2A
4
2
4
3
2
– 40°C
0.4A
5
C
6
Collector Current, IC – A
1.2A
1.0A
0.8A
0.6A
25°C
8
20°
2.0A
I C - VBE
7
1.4A
Ta =
1
10
Collector Current, IC – A
tf
1
IB = 0
2
4
6
8
0
0
10
0.2
2
10
7
5
3
2
1.0
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7
120
°C
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
10
3
5
7 0.1
Switching Time, SW Time – µs
Base–to–Emitter Saturation Voltage, VCE (sat) – V
7
5
3
2
Ta=–40°C
7
25°C
120°C
3
2
0.1
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC – A
3
5
7 1.0
2
3
5
7
10
3
5
7
SW Time - I C
10
7
5
IC /IB =5
5
2
Collector Current, IC – A
VBE(sat) - I C
1.0
1.4
VCE(sat) - I C
10
I /I =5
7 C B
5
Collector Current, IC – A
10
1.2
Ta =
–40°C
1.0
°C
25°C
3
0.8
40
Ta=120°C
5
Collector–to–Emitter
Saturation Voltage, VCE (sat) –V
DC Current Gain,hFE
VCE =5V
7
0.6
–
hFE - I C
100
0.4
Base-to-Emitter Voltage, VBE – V
Collector-to-Emitter Voltage, VCE – V
C
0
25°
0
10
3
2
VCC =200V
IC /IB1=5
IB2/IB1=2
R load
t stg
1.0
7
5
3
2
tf
0.1
7
5
3
2
0.01
7
0.1
2
3
5
7
1.0
2
3
5
7
10
Collector Current, IC – A
No.5883-2/3
2SC5304
SW Time - I B2
5
7
2
1.0
3
5
Base Current, IB2 – A
op
er
at
io
n
5
7 10
2
3
5
7 100
2
3
5
7
Collector–to–Emitter Voltage, VCE – V
Reverse Bias A S O
5
C
Tc = 25 °C
3 1pulse
2
2 3
7
s
3
D
3
2
0.1
7
5
0µ
2
0.1
s
0.01
7
0µ
3
2
1.0
7
5
s
0.1
7
5
=3
5W
3
2
s
tf
PC
1m
3
2
PT<50µs
I CP
10 I C
7
5
30
1.0
7
5
Collector Current, IC – A
t stg
3
2
Forward Bias A S O
3
2
10
VCC = 200V
IC = 3.5A
IB1 =0.7A
R load
m
10
Switching Time, SW Time – µs
10
7
5
P C - Ta
2.5
3
Collector Dissipation, PC – W
Collector Current, IC – A
2
10
7
5
3
2
1.0
7
5
L=200µH
3
IB2=–1A
2 Tc=25°C
0.1
1pulse
5
7
2
100
3
5
7
2
1000
1.5
No
he
at
1.0
sin
k
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – °C
Collector-to-Emitter Voltage, VCE – V
P C - Tc
40
Collector Dissipation, PC – W
2.0
35
30
20
10
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – °C
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of June, 1998. Specifications and information herein are subject to
change without notice.
PS No.5883-3/3