SANYO TS7992

Ordering number :EN5961
NPN Triple Diffused Planar Silicon Transistor
TS7992
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
Package Dimensions
• High speed.
• High breakdown voltage (VCBO=1600V).
• High reliability (Adoption of HVP process).
• Adoption of MBIT process.
unit:mm
2039D-TO3PML
[TS7992]
16.0
ø3.4
5.6
4.0
2.0
21.0
22.0
5.0
8.0
3.1
2.8
2.0
2.0
20.4
1.0
0.6
2
3
1:Base
2:Collector
3:Emitter
SANYO:TO-3PML
3.5
1
5.45
5.45
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Colletctor-to-Base Voltage
Symbol
Conditions
Ratings
Unit
1600
V
Colletctor-to-Emitter Voltage
VCBO
VCEO
800
V
Emitter-to-Base Voltage
VEBO
6
V
IC
20
A
Collector Current (Pulse)
ICP
40
A
Collector Dissipation
PC
3.0
W
Junction Temperature
Tj
Storage Temperature
Tstg
Collector Current
Tc=25˚ C
75
W
150
˚C
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Storage Time
Fall Time
Symbol
Conditions
ICES
VCE=1600V, RBE=0
VCEO(SUS) IC=100mA, IB=0
IEBO
VEB=4V, IC=0
ICBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
tstg
tf
Ratings
min
typ
1.0
mA
1.0
mA
10
µA
800
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=14A
Unit
max
15
V
30
4
7
IC=14A, IB=3.5A
5
IC=14A, IB=3.5A
1.5
V
V
IC=12A, IB1=2.0A, IB2=–5.0A
3.0
µs
IC=12A, IB1=2.0A, IB2=–5.0A
0.2
µs
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42498TS (KOTO) TA-1620 No.5961-1/3
TS7992
Switching Time Test Circuit
PW=20µs
IB1
DC≤1%
IB2
OUTPUT
INPUT
RB
RL=16.7Ω
VR
+
+
100µF
470µF
50Ω
VBE=–2V
VCC=200V
I C - VCE
18
1.0A
8
0.5A
6
4
2
10
8
6
4
2
IB =0
0
12
0
1
2
3
4
5
6
7
8
9
0
0
10
0.2
hFE - I C
100
Collector-to-Emitter
Saturation Voltage, VCE(sat) – V
DC Current Gain, hFE
5
Ta=120˚C
25˚C
2
–40˚C
10
7
5
3
2
1.0
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
2
0.1
7
5
Ta=–40˚C
120˚C
25˚C
3
2
2
3
Switching Time, SW Time – µs
1.0
7
tf
3
2
VCC =200V
0.1 IC/IB1=6
I /I =2.5
7 B2 B1
R load
0.1
3
5
7 1.0
2
7 1.0
3
5
Collector Current, IC – A
2
3
5
7 10
2
3
SW Time - I B2
7
2
2
5
10
3
5
7
1.2
Collector Current, IC – A
t stg
5
1.0
1.0
7
5
0.01
0.1
3
SW Time - I C
5
0.8
3
2
Collector Current, IC – A
7
0.6
VCE(sat) - I C
10
7 IC /IB =5
5
VCE =5V
7
3
0.4
Base-to-Emitter Voltage, VBE – V
Collector-to-Emitter Voltage, VCE – V
Switching Time, SW Time – µs
–40
˚C
1.5A
10
14
C
12
16
20˚
14
3.0A
2.5A
2.0A
25˚C
Collerctor Current, IC – A
16
I C - VBE
VCE =5V
Ta=
1
5.0A
18
20
4.0A 3.5A
4.5A
Collerctor Current, IC – A
20
7
10
2
3
VCC =200V
IC =12A
IB1 =2A
R load
t stg
5
3
2
tf
1.0
7
5
3
2
0.1
7
7
0.1
2
3
5
7 1.0
2
3
5
7
10
2
Base Current, IB2 – A
No.5961-2/3
TS7992
Forward Bias A S O
0µ
s
0µ
=7
Collector Current, IC – A
PC
s
5W
s
1m
10
7
5
3
2
ms
1.0
7
5
3
2
D
C
0.1
7
5
3
Tc=25˚C
2
1 pulse
0.01
2 3
1.0
5 7 10
2
3
5 7 100
op
er
2
at
io
n
3
Reverse Bias A S O
100
7
5
3
2
10
30
10
Collector Current, IC – A
100
7
5 I CP
3 IC
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
L=100µH
IB2 =–5A
Tc=25˚C
1 pulse
0.01
1.0
5 7 1000
2 3
Collector-to-Emitter Voltage, VCE – V
P C - Ta
4.0
5 7 10
2 3
5 7 100
2 3
5 7 1000
2 3
Collector-to-Emitter Voltage, VCE – V
P C - Tc
80
75
Collector Dissipation, PC – W
Collector Dissipation, PC – W
70
3.0
No
2.0
he
at
sin
k
1.0
60
50
40
30
20
10
0
0
20
40
60
80
100
120
Ambient Temperature, Ta – ˚C
140
160
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – ˚C
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of April, 1998. Specifications and information herein are subject to
change without notice.
PS No.5961-3/3