Power Transistors 2SD1258 Silicon NPN triple diffusion planar type ● ● 1.5±0.1 1.0±0.1 1.1max. 2.0 1.5max. High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 10.0±0.3 ■ Features 3.4±0.3 8.5±0.2 For power amplification with high forward current transfer ratio 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 2 1:Base 2:Collector 3:Emitter N Type Package 3 (TC=25˚C) Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO Peak collector current ICP Collector current Base current 6 V 2.5 A IC 1 A IB 0.1 A Unit: mm 8.5±0.2 3.4±0.3 6.0±0.3 1.0±0.1 0.8±0.1 Collector power TC=25°C dissipation Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter R0.5 R0.5 0 to 0.4 2.54±0.3 1.1 max. W 1.3 150 ˚C –55 to +150 ˚C 14.7±0.5 V +0.4 200 3.0–0.2 VCBO 4.4±0.5 Collector to base voltage +0 Unit 1.5–0.4 Ratings 10.0±0.3 Symbol 2.0 Parameter 4.4±0.5 ■ Absolute Maximum Ratings 1 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 200V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 25mA, IB = 0 150 Forward current transfer ratio hFE* VCE = 4V, IC = 0.2A 500 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 0.02A Transition frequency fT VCE = 4V, IC = 0.1A, f = 10MHz *h FE V 2000 1 25 V MHz Rank classification Rank hFE Q P 500 to 1200 800 to 2000 Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 2000) in the rank classification. 1 Power Transistors 2SD1258 PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) (1) 40 30 20 Collector to emitter saturation voltage VCE(sat) (V) 0.5 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) 50 10 IB=400µA 0.4 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1 50µA (2) (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 1 –25˚C 0.3 0.1 0.03 0.03 0.1 0.3 1 300 100 30 10 3 t=10ms 1ms 0.3 300ms 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 2 1000 (V) 1 100 30 10 0.1 0.3 1 3 1 0.01 0.03 10 0.1 0.3 1 3 Collector current IC (A) (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 3 VCE=4V f=10MHz TC=25˚C Rth(t) — t Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 0.3 300 Collector current IC (A) Non repetitive pulse TC=25˚C 0.1 3 103 IC 0.03 1000 Area of safe operation (ASO) 1 0.01 0.01 3000 TC=100˚C 25˚C 1 0.01 0.03 3 100 3 ICP 0.03 fT — IC –25˚C Collector current IC (A) 30 0.1 10000 Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) TC=100˚C –25˚C VCE=4V 3000 1000 25˚C 0.01 0.01 25˚C 0.3 hFE — IC IC/IB=25 3 1 Collector current IC (A) 10000 10 TC=100˚C 3 Collector to emitter voltage VCE (V) VBE(sat) — IC IC/IB=25 10 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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