ETC 2SB0929A(2SB929A)

Power Transistors
2SB0929, 2SB0929A (2SB929, 2SB929A)
Silicon PNP epitaxial planar type
10.0±0.3
1.5±0.1
0.8±0.1
2.54±0.3
1
–60
emitter voltage 2SB0929A
–80
VEBO
–5
V
Peak collector current
ICP
–5
A
Collector current
IC
–3
A
dissipation
Junction temperature
Tj
Storage temperature
Tstg
150
˚C
–55 to +150
˚C
Symbol
Collector cutoff
2SB0929
current
2SB0929A
Collector cutoff
2SB0929
current
2SB0929A
ICES
ICEO
IEBO
Emitter cutoff current
Collector to emitter
2SB0929
voltage
2SB0929A
Forward current transfer ratio
Conditions
2
1:Base
2:Collector
3:Emitter
N Type Package (DS)
3
min
max
–200
–200
VCE = –30V, IB = 0
–300
VCE = –60V, IB = 0
–300
VEB = –5V, IC = 0
hFE1*
VCE = –4V, IC = –1A
70
10
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
Collector to emitter saturation voltage
VCE(sat)
IC = –3A, IB = – 0.375A
Transition frequency
fT
VCE = –10V, IC = – 0.5A, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
IC = –1A, IB1 = – 0.1A, IB2 = 0.1A
µA
µA
–1
IC = –30mA, IB = 0
VBE
Unit
mA
–60
VCEO
Rank classification
typ
VCE = –80V, VBE = 0
hFE2
FE1
1
VCE = –60V, VBE = 0
Base to emitter voltage
*h
0 to 0.4
1.1 max.
5.08±0.5
(TC=25˚C)
Parameter
R0.5
R0.5
2.54±0.3
W
1.3
■ Electrical Characteristics
1.0±0.1
0.8±0.1
35
PC
Ta=25°C
6.0±0.3
V
Emitter to base voltage
Collector power TC=25°C
3.4±0.3
14.7±0.5
VCEO
Unit: mm
8.5±0.2
+0.4
2SB0929
V
–80
3.0–0.2
Collector to
–60
VCBO
4.4±0.5
2SB0929A
1:Base
2:Collector
3:Emitter
N Type Package
3
+0
2SB0929
base voltage
2
Unit
1.5–0.4
Collector to
Ratings
10.0±0.3
Symbol
0.5max.
5.08±0.5
Absolute Maximum Ratings (TC=25˚C)
Parameter
1.1max.
2.0
■
1.5max.
4.4±0.5
●
1.0±0.1
2.0
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage VCE(sat)
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.5min.
■ Features
●
Unit: mm
6.0±0.5
For power amplification
Complementary to 2SD1252 and 2SD1252A
●
3.4±0.3
8.5±0.2
V
–80
250
–1.8
V
–1.2
V
30
MHz
0.5
µs
1.2
µs
0.3
µs
Note) The part numbers in the parenthesis show conventional part number.
Rank
Q
P
hFE1
70 to 150
120 to 250
Note: Ordering can be made by the common rank (PQ rank h FE1 = 70 to 250) in the
rank classification.
1
Power Transistor
2SB0929, 2SB0929A
PC — Ta
IC — VCE
35
30
25
20
(1)
15
10
–10
TC=25˚C
–5
IB=–100mA
–4
–80mA
–60mA
–40mA
–3
–30mA
–20mA
–2
(3)
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
–4
0
–6
–8
–10
–3
–1
– 0.3
TC=100˚C
– 0.1
–25˚C
25˚C
–1
–3
300
100
TC=100˚C
25˚C
–25˚C
30
10
3
–1
–3
300ms
–3
–10
–30
2SB0929A
2SB0929
– 0.1
– 0.03
–100 –300 –1000
Collector to emitter voltage VCE
2
100
30
10
(V)
–1
–3
Collector current IC (A)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Collector current IC (A)
t=1ms
–1
– 0.3
300
1
– 0.01 – 0.03 – 0.1 – 0.3
–10
103
10ms
VCE=–5V
f=10MHz
TC=25˚C
3
Area of safe operation (ASO)
–10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
–2.0
1000
Collector current IC (A)
IC
–1.6
3000
1
– 0.01 – 0.03 – 0.1 – 0.3
–10
Non repetitive
pulse
TC=25˚C
–1.2
VCE=–4V
3000
Collector current IC (A)
ICP
– 0.8
fT — IC
1000
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
– 0.4
Base to emitter voltage VBE (V)
Transition frequency fT (MHz)
–10
– 0.01
–1
0
10000
IC/IB=10
–3
–12
hFE — IC
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
–2
10000
–30
–25˚C
–4
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–100
– 0.03
25˚C
TC=100˚C
–4mA
–16mA
0
0
–6
–8mA
(2)
0
–8
–2
–12mA
–1
5
VCE=–4V
Collector current IC (A)
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
IC — VBE
–6
Collector current IC (A)
Collector power dissipation PC (W)
40
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
–10
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2001 MAR