Power Transistors 2SB0949, 2SB0949A (2SB949, 2SB949A) Silicon PNP epitaxial planar type Darlington Unit: mm Parameter Collector to base voltage Collector to emitter voltage Symbol Rating Unit VCBO −60 V 2SB0949 −60 VCEO 16.7±0.3 V −5 V Peak collector current ICP −4 A Collector current IC −2 A PC 35 W Ta = 25°C 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F Package 1 2 3 VEBO TC = 25°C Internal Connection C 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current 2SB0949 Collector cutoff current 2SB0949 2SB0949 Base to emitter voltage Collector to emitter saturation voltage Typ Max Unit −1 mA VCB = −80 V, IE = 0 −1 ICEO VCB = −30 V, IB = 0 −2 VCB = −40 V, IB = 0 −2 IEBO VEB = −5 V, IC = 0 −2 VCEO IC = −30 mA, IB = 0 −60 mA mA V −80 2SB0949A Forward current transfer ratio Min VCB = −60 V, IE = 0 2SB0949A Collector to emitter voltage Conditions ICBO 2SB0949A Emitter cutoff current 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 Emitter to base voltage Collector power dissipation 1.3±0.2 1.4±0.1 5.08±0.5 −80 2SB0949A 2.7±0.2 φ 3.1±0.1 −80 2SB0949A 2SB0949 14.0±0.5 ■ Absolute Maximum Ratings TC = 25°C 5.5±0.2 Solder Dip (4.0) • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 7.5±0.2 ■ Features 10.0±0.2 4.2±0.2 0.7±0.1 For power amplification and switching Complementary to 2SD1275 and 2SD1275A hFE1 VCE = −4 V, IC = −1 A 1 000 hFE2 * VCE = −4 V, IC = −2 A 2 000 VBE VCE = −4 V, IC = −2 A −2.8 V VCE(sat) IC = −2 A, IB = −8 mA −2.5 V 10 000 Transition frequency fT VCE = −10 V, IC = − 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = −2 A, IB1 = −8 mA, IB2 = 8 mA, 0.4 µs Storage time tstg VCC = −50 V 1.5 µs Fall time tf 0.5 µs Note) *: Rank classification Rank hFE2 Q P 2 000 to 5 000 4 000 to 10 000 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SB0949, 2SB0949A Power Transistors PC T a IC VCE IC VBE –5 40 30 (1) 20 10 TC=25˚C –3 – 0.6mA –2 – 0.4mA – 0.2mA 20 40 60 80 100 120 140 160 25˚C –4 –1 VCE(sat) IC –2 –3 –4 –5 0 hFE IC TC=100˚C –25˚C – 0.3 25˚C – 0.1 – 0.03 –1 –3 TC=100˚C 104 25˚C 1000 –25˚C 103 102 Collector current IC (A) –1 –3 ICP t=1ms –3 IC 10ms –1 DC – 0.3 – 0.03 –3 –10 –30 2SB0949A 2SB0949 – 0.1 –100 –300 –1000 Collector to emitter voltage VCE (V) Thermal resistance Rth(t) (˚C/W) –10 30 10 3 1 – 0.1 – 0.3 –10 –1 –3 –10 –30 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 –100 Collector to base voltage VCB (V) 103 –30 100 Rth(t) t Area of safe operation (ASO) Non repetitive pulse TC=25˚C 300 Collector current IC (A) –100 –3.2 IE=0 f=1MHz TC=25˚C 3000 10 – 0.01 – 0.03 – 0.1 – 0.3 –10 Collector output capacitance Cob (pF) Forward current transfer ratio hFE –3 –2.4 Cob VCB VCE=–4V –10 –1.6 10000 IC/IB=250 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.8 Base to emitter voltage VBE (V) 105 – 0.01 –1 –25˚C –2 Collector to emitter voltage VCE (V) –100 –1 TC=100˚C 0 0 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –6 0 0 Collector current IC (A) –8 – 0.1mA (4) 0 2 VCE=–4V IB=–2.0mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA – 0.8mA –4 –1 (2) (3) –10 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) Collector current IC (A) Collector power dissipation PC (W) 50 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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