Transistor 2SB1319 Silicon PNP epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 1.0 0.85 * Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –8 A Collector current IC –5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 4.5±0.1 0.55±0.1 (Ta=25˚C) 3 0.45±0.05 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 ■ Absolute Maximum Ratings 4.1±0.2 7 0. ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –10V, IE = 0 –100 nA Emitter cutoff current IEBO VEB = –5V, IC = 0 –1 µA Collector to emitter voltage VCEO IC = –1mA, IB = 0 –20 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V *1 VCE = –2V, IC = –2A*2 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = –0.1A*2 Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz 90 625 –1 120 MHz 85 *2 *1h FE V pF Pulse measurement Rank classification Rank P Q R hFE 90 ~ 135 120 ~ 205 180 ~ 625 1 2SB1319 Transistor PC — Ta IC — VCE 1.2 1.0 0.8 0.6 0.4 –5 –45mA –40mA –35mA –30mA –4 –25mA –20mA –3 –15mA –2 –10mA –10 –5mA –1 25˚C –8 Ta=75˚C –25˚C –6 –4 –2 0 40 60 80 100 120 140 160 –2 –3 –4 –5 –6 0 – 0.4 –100 Collector to emitter saturation voltage VCE(sat) (V) VCE=–2V Ta=75˚C 500 25˚C –25˚C –1.6 –2.0 240 IC/IB=30 –10 –3 –1 Ta=75˚C 25˚C –25˚C – 0.1 100 –1.2 fT — I E –30 – 0.3 200 – 0.8 Base to emitter voltage VBE (V) VCE(sat) — IC 600 300 –1 Collector to emitter voltage VCE (V) hFE — IC 400 0 0 VCB=–6V Ta=25˚C Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Forward current transfer ratio hFE VCE=–2V Ta=25˚C IB=–50mA 0.2 0 200 160 120 80 40 – 0.03 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 Collector current IC (A) 300 IE=0 f=1MHz Ta=25˚C 250 200 150 100 50 0 –1 –3 –10 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) –12 Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.4 0 –100 Collector to base voltage VCB (V) 2 IC — VBE –6 Collector current IC (A) Collector power dissipation PC (W) 1.6 –10 1 3 10 30 100 300 Emitter current IE (mA) 1000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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