ETC 2SK1867

Power F-MOS FETs
2SK1867
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 15mJ
● VGSS = ±30V guaranteed
● High-speed switching: tf = 26ns
● No secondary breakdown
● Allowing to supply by the radial taping
unit: mm
5.0±0.1
18.0±0.5
Solder Dip
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
■ Absolute Maximum Ratings (TC = 25°C)
Symbol
Unit
VDSS
900
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±2
A
Pulse
IDP
±6
A
EAS*
15
mJ
Avalanche energy capacity
*
Ratings
Allowable power
TC = 25°C
dissipation
Ta = 25°C
15
PD
1.2±0.1
C1.0
2.25±0.2
0.65±0.1
1.05±0.1
0.35±0.1
0.55±0.1
0.55±0.1
C1.0
Drain to Source breakdown voltage
Drain current
90˚
2.5±0.2
■ Applications
Parameter
1.0
13.0±0.2
4.2±0.2
10.0±0.2
1 2 3
2.5±0.2
2.5±0.2
1: Gate
2: Drain
3: Source
MT4 Type Package
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 7.5mH, IL = 2A, VDD = 50V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 900V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 2A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 2A
Diode forward voltage
VDSF
IDR = 2A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case
Rth(ch-c)
VGS = 10V, ID = 2A
VDD = 200V, RL = 100Ω
900
V
1
3.8
1.5
5
V
4.85
Ω
2
S
−1.6
V
730
pF
90
pF
40
pF
40
ns
35
ns
105
ns
8.33
°C/W
1
Power F-MOS FETs
2SK1867
| Yfs |  ID
3.0
VDS=25V
6
25˚C 100˚C
5
TC=0˚C
150˚C
4
3
2
1
VDS=25V
TC=25˚C
2.4
1.8
100˚C
150˚C
1.2
0.6
0
0
0
2
4
6
8
10
12
0
Gate to source voltage VGS (V)
4
ID=6A
30
20
3A
1.5A
0
0
5
10
15
20
25
30
300
100
Coss
30
(1)
8
6
4
80
120
160
60
80 100 120 140 160
Ambient temperature Ta (˚C)
3
4
5
6
VDD=200V
VGS=10V
TC=25˚C
120
td(off)
90
60
ton
tf
30
0
200
1
2
3
4
5
Drain current ID (A)
EAS  Tj
30
Non repetitive pulse
TC=25˚C
10 I
DP
t=100µs
3 ID
1
0.3
1ms
0.1
10ms
100ms
0.03
0.01
40
2
0
40
DC
(2)
1
Crss
10
30
Drain current ID (A)
10
20
0
Area of safe operation (ASO)
(1)TC=Ta
(2)Without heat sink
(PD=2.0W)
0
2
0
100
12
0
0˚C
4
Drain to source voltage VDS (V)
PD  Ta
2
25˚C
6
ton, tf, td(off)  ID
Ciss
Gate to source voltage VGS (V)
14
8
f=1MHz
TC=25˚C
0
16
100˚C
150
1000
50
0.75A
TC=150˚C
10
Drain current ID (A)
3000
60
10
12
5
Switching time ton,tf,td(off) (ns)
70
40
VGS=10V
14
Ciss, Coss, Crss  VDS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
Drain to source voltage VDS (V)
3
10000
TC=25˚C
Allowable power dissipation PD (W)
2
16
Drain current ID (A)
VDS  VGS
80
2
1
1
3
10
30
100
300
1000
Drain to source voltage VDS (V)
Avalanche energy capacity EAS (mJ)
Drain current ID (A)
7
Forward transfer admittance |Yfs| (S)
8
RDS(on)  ID
Drain to source ON-resistance RDS(on) (Ω)
ID  VGS
ID=2A
25
20
15
10
5
0
25
50
75
100
125
150
Junction temperature Tj (˚C)
Power F-MOS FETs
2SK1867
VDS, VGS  Qg
6
700
Drain to source voltage VDS (V)
Gate threshold voltage Vth (V)
VDS=25V
ID=1mA
5
4
3
2
1
600
50
75
100
125
10
VDS
8
400
300
6
VGS
200
4
100
2
0
25
12
500
0
0
14
ID=3A
150
Case temperature TC (˚C)
0
10
20
30
40
Gate to source voltage VGS (V)
Vth  TC
0
50
Gate charge amount Qg (nC)
Switching measurement circuit
Avalanche energy capacity test circuit
RL
D.U.T
PG
RG
L
D.U.T
VDD
PG
VDD
RG
3