Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed: EAS > 45mJ ● High-speed switching: tf = 30ns ● No secondary breakdown unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 ■ Applications ■ Absolute Maximum Ratings (TC = 25°C) Parameter Symbol φ3.2±0.1 1.4±0.2 13.7±0.2 4.2±0.2 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply Ratings 0.8±0.1 Unit 1 Drain to Source breakdown voltage VDSS 250 V Gate to Source voltage VGSS ±20 V Drain current DC ID ±7 A Pulse IDP ±14 A EAS* 45 mJ Avalanche energy capacity * Allowable power TC = 25°C dissipation Ta = 25°C 35 PD 2.6±0.1 1.6±0.2 2 0.55±0.15 2.54±0.3 3 5.08±0.5 1: Gate 2: Drain 3: Source TO-220D Package W 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C L = 0.1mH, IL = 8A, VDD = 50V, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 10V, ID = 1mA Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 5A Forward transfer admittance | Yfs | VDS = 10V, ID = 5A Diode forward voltage VDSF IDR = 8A, VGS = 0 min typ VDS = 200V, VGS = 0 Input capacitance (Common Source) Ciss max Unit 0.1 mA ±1 µA 250 V 1 0.4 2.7 5 V 0.6 Ω −1.7 V 4.7 S 1100 pF 200 pF Reverse transfer capacitance (Common Source) Crss 60 pF Turn-on time (delay time) td(on) 20 ns Rise time tr VGS = 10V, ID = 5A 20 ns Turn-off time (delay time) td(off) VDD = 100V, RL = 20Ω 130 ns Fall time tf 30 ns Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz 1 Power F-MOS FETs 2SK3042 PD Ta Area of safe operation (ASO) 100 16 60 t =10µs 10 DC 3 100µs 1 1ms 0.3 10ms 100ms 0.1 0.03 (1) TC=Ta (2) Without heat sink TC=25˚C 14 VGS=15V 50 40 30 (1) 20 10V 12 Drain current ID (A) Allowable power dissipation PD (W) Non repetitive pulse TC=25˚C 30 Drain current ID (A) ID VDS 10 7.5V 8 7V 6 6.5V 4 6V 40W 10 2 5.5V 5V (2) 0.01 0 0 1 3 10 30 100 300 1000 0 Drain to source voltage VDS (V) 20 40 ID VGS Gate to source voltage VGS (V) 125˚C 150˚C 6 4 2 0 4 6 8 10 6.2 6.0 5.8 5.6 5.4 5.2 12 Gate to source voltage VGS (V) 25 50 75 100 125 4 3 2 1 150 | Yfs | ID TC=25˚C 0.5 0.4 VGS=10V 15V 0.3 0.2 0.1 0 2 4 6 8 Drain current ID (A) 10 25 50 75 100 125 150 Ciss, Coss, Crss VDS 10000 VDS=10V TC=25˚C 7 f=1MHz TC=25˚C 3000 Ciss 1000 6 5 4 3 2 1 0 0 0 Case temperature TC (˚C) 8 Forward transfer admittance |Yfs| (S) Drain to source ON-resistance RDS(on) (Ω) 5 Case temperature TC (˚C) RDS(on) ID 2 VDS=25V ID=1mA 0 0 0.6 20 Vth TC 5.0 2 15 6 VDS=10V ID=3A 6.4 10 Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) Drain current ID (A) 8 0 5 0 VGS TC 6.6 TC=0˚C 25˚C 75˚C VDS=10V 80 100 120 140 160 Gate threshold voltage Vth (V) 10 60 Ambient temperature Ta (˚C) 0 2 4 6 8 10 12 Drain current ID (A) 14 16 300 100 Coss 30 Crss 10 3 1 0 40 80 120 160 200 Drain to source voltage VDS (V) Power F-MOS FETs 2SK3042 Rth(t) t Thermal resistance Rth(t) (˚C/W) 102 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) 10 (2) 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3