ETC 2SK2032

Power F-MOS FETs
2SK2032
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 200mJ
● VGSS = ±30V guaranteed
● High-speed switching: tf = 90ns
● No secondary breakdown
unit: mm
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
21.0±0.5
15.0±0.2
■ Applications
5.0±0.2
3.2
φ3.2±0.1
16.2±0.5
12.5
3.5
Solder Dip
0.7
15.0±0.3
11.0±0.2
2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
10.9±0.5
Ratings
Unit
VDSS
450
V
VGSS
±30
V
DC
ID
±13
A
Pulse
IDP
±26
A
Avalanche energy capacity
EAS*1
200
mJ
Allowable power
TC = 25°C
P D* 2
100
W
Ta = 25°C
*3
3
W
Tch
150
°C
Tstg
−55 to +150
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
dissipation
Channel temperature
Storage temperature
*1
PD
L = 5mH, IL = 9A, VDD = 50V, 1 pulse
*2
TC = 25°C
*3
1
2
3
1: Gate
2: Drain
3: Source
TOP-3 Full Pack Package (a)
°C
Ta = 25°C (Without heat sink)
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 360V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 7A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 7A
Diode forward voltage
VDSF
IDR = 13A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case
Rth(ch-c)
VGS = 10V, ID = 7A
VDD = 150V, RL = 21.4Ω
450
V
2
0.34
5
5
V
0.45
Ω
8
S
−2
V
1700
pF
300
pF
120
pF
110
ns
90
ns
220
ns
1.25
°C/W
1
Power F-MOS FETs
2SK2032
PD  Ta
Area of safe operation (ASO)
120
IDP
30
t=100µs
ID
Drain current ID (A)
Allowable power dissipation PD (W)
Non repetitive pulse
TC=25˚C
10
1ms
3
10ms
1
DC
0.3
0.1
0.03
300
(1) TC=Ta
(2) Without heat sink
(PD=3.0W)
100
Avalanche energy capacity EAS (mJ)
100
EAS  Tj
80
60
(1)
40
20
(2)
0
0.01
1
3
10
30
100
300
1000
0
Drain to source voltage VDS (V)
40
20
ID  VDS
8
5.5V
6
4
TC=0˚C
12
150˚C
25˚C
100˚C
8
4
5.0V
100W
0
125
40
50
60
0
2
4
30
25
20
ID=26A
10
13A
6.5A
3.25A
0
10
15
20
25
30
Gate to source voltage VGS (V)
Drain to source ON-resistance RDS(on) (Ω)
TC=25˚C
5
5
4
3
2
1
8
10
12
0
25
50
75
100
125
150
Case temperature TC (˚C)
RDS(on)  ID
35
175
VDS=25V
ID=1mA
Gate to source voltage VGS (V)
VDS  VGS
40
15
6
| Yfs |  ID
1.2
12
VGS=10V
Forward transfer admittance |Yfs| (S)
30
150
0
0
20
Drain to source voltage VDS (V)
Drain to source voltage VDS (V)
100
Vth  TC
Gate threshold voltage Vth (V)
Drain current ID (A)
Drain current ID (A)
6.0V
10
2
2
75
50
Junction temperature Tj (˚C)
6
16
5
50
VDS=25V
12
0
100
ID  VGS
VGS=15V
10V
10
150
0
25
80 100 120 140 160
20
0
200
Ambient temperature Ta (˚C)
16
14
60
VDD=50V
ID=13A
250
1.0
0.8
TC=150˚C
0.6
100˚C
0.4
25˚C
0˚C
0.2
0
VDS=25V
TC=25˚C
10
8
6
4
2
0
0
4
8
12
16
Drain current ID (A)
20
0
5
10
15
Drain current ID (A)
20
Power F-MOS FETs
2SK2032
Ciss, Coss, Crss  VDS
VDS, VGS  Qg
250
300
Coss
100
30
Crss
10
3
1
0
50
100
150
200
250
Drain to source voltage VDS (V)
VDS
200
16
150
12
100
8
VGS
50
4
0
0
20
40
60
80
100
0
120
Gate charge amount Qg (nC)
Switching time td(on),tr,tf,td(off) (ns)
Ciss
1000
VDD=150V
VGS=10V
TC=25˚C
ID=13A
Gate to source voltage VGS (V)
3000
300
20
f=1MHz
TC=25˚C
Drain to source voltage VDS (V)
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10000
td(on), tr, tf, td(off)  ID
250
td(off)
200
150
100
tr
tf
50
td(on)
0
0
2
4
6
8
10
12
14
16
Drain current ID (A)
3