Power F-MOS FETs 2SK2125 Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 +0.5 13.7–0.2 ■ Absolute Maximum Ratings (TC = 25°C) Parameter Symbol * Ratings Unit VDSS 500 V Gate to Source voltage VGSS ±30 V DC ID ±2.5 A Pulse IDP ±10 A EAS* 15.6 mJ Avalanche energy capacity Allowable power TC = 25°C dissipation Ta = 25°C 40 PD 2.6±0.1 1.2±0.15 1.45±0.15 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 Drain to Source breakdown voltage Drain current 3.0±0.2 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 4.1±0.2 8.0±0.2 Solder Dip 15.0±0.3 ■ Applications 7 1 2 3 1: Gate 2: Drain 3: Source TO-220E Package W 2 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C L = 5mH, IL = 2.5A, VDD = 50V, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 400V, VGS = 0 0.1 mA Gate to Source leakage current IGSS VGS = ±30V, VDS = 0 ±1 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 25V, ID = 1mA Drain to Source ON-resistance RDS(on) VGS = 10V, ID = 1.5A Forward transfer admittance | Yfs | VDS = 25V, ID = 1.5A Diode forward voltage VDSF IDR = 2.5A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 20V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss 500 V 2 3.2 1 5 V 4 Ω 1.5 S −1.5 V 330 pF 55 pF 20 pF Turn-on time (delay time) td(on) 15 ns Rise time tr VGS = 10V, ID = 1.5A 25 ns Fall time tf VDD = 150V, RL = 100Ω 30 ns Turn-off time (delay time) td(off) 55 ns Thermal resistance between channel and case Rth(ch-c) 3.125 °C/W 1 Power F-MOS FETs 2SK2125 PD Ta Area of safe operation (ASO) EAS Tj 50 IDP 100µs 3 ID 1ms 1 10ms 100ms 0.3 DC 0.1 Non repetitive pulse TC=25˚C 10 30 24 (1) TC=Ta (2) Without heat sink (PD=2W) Avalanche energy capacity EAS (mJ) Drain current ID (A) 10 Allowable power dissipation PD (W) t=10µs 40 30 (1) 20 10 (2) 0 100 300 0 Drain to source voltage VDS (V) 40 20 60 ID VDS 4 75 50 ID VGS 125 Gate threshold voltage Vth (V) 4 Drain current ID (A) 2.5 2.0 6V 40W 150 175 Vth TC VDS=25V VGS=10V 7V 6.5V 1.0 100 6 TC=25˚C Drain current ID (A) 8 Junction temperature Tj (˚C) 3.5 TC=0˚C 150˚C 25˚C 100˚C 3 2 1 5.5V 0.5 12 0 25 80 100 120 140 160 5 1.5 16 Ambient temperature Ta (˚C) 4.0 3.0 VDD=50V ID=2.5A 20 VDS=25V ID=1mA 5 4 3 2 1 5V 0 0 0 0 10 20 30 40 50 60 0 Drain to source voltage VDS (V) 2 4 10 12 0 | Yfs | ID 10 8 TC=150˚C 6 100˚C 4 25˚C 0˚C 2 0 1 2 3 4 Drain current ID (A) 5 75 100 125 150 IDR VDSF VGS=0 TC=25˚C VDS=25V TC=25˚C 2.5 2.0 1.5 1.0 0.5 0 0 50 100 Drain reverse current IDR (A) VGS=10V 25 Case temperature TC (˚C) 3.0 12 Forward transfer admittance |Yfs| (S) Drain to source ON-resistance RDS(on) (Ω) 8 Gate to source voltage VGS (V) RDS(on) ID 2 6 10 1 0.1 0.01 0 1 2 3 4 Drain current ID (A) 5 0 0.5 1.0 1.5 2.0 Diode forward voltage VDSF (V) Power F-MOS FETs 2SK2125 VDS, VGS Qg 1000 Ciss 100 Coss 10 Crss 400 16 350 14 VDS=150V 300 12 250V 250 10 200 8 VGS 150 6 100 4 50 2 150 Switching time td(on),tr,tf,td(off) (ns) f=1MHz TC=25˚C Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 10000 td(on), tr, tf, td(off) ID Gate to source voltage VGS (V) Ciss, Coss, Crss VDS VDD=150V VGS=10V TC=25˚C 125 100 td(off) 75 50 tf tr td(on) 25 VDS 1 0 50 100 150 200 250 0 0 Drain to source voltage VDS (V) 4 8 12 16 0 24 20 Gate charge amount Qg (nC) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Drain current ID (A) Rth(t) t Thermal resistance Rth(t) (˚C/W) 102 (1) Notes: Rth was measured at Ta=25˚C and under natural convection. (1) without heat sink (2) with a 100 × 100 × 2mm Al heat sink (2) 10 d=1 0.5 1 0.1 tP T 0.05 10–1 d= tP T 0.01 10–2 10–4 10–3 10–2 10–1 1 10 102 103 Time t (s) 3