PANASONIC 2SK2340

Power F-MOS FETs
2SK2340
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
● No secondary breakdown
unit: mm
4.6±0.2
+0.5
13.7–0.2
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source breakdown voltage
VDSS
900
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±5
A
Pulse
IDP
±10
A
EAS*
45
mJ
Avalanche energy capacity
*
Allowable power
TC = 25°C
dissipation
Ta = 25°C
50
PD
2.6±0.1
1.2±0.15
1.45±0.15
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7
Drain current
3.0±0.2
15.0±0.3
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
2.9±0.2
4.1±0.2 8.0±0.2
Solder Dip
φ3.2±0.1
■ Applications
9.9±0.3
1 2 3
1: Gate
2: Drain
3: Source
TO-220E Package
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 3.6mH, IL = 5A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 720V, VGS = 0
100
µA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 3A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 3A
Diode forward voltage
VDSF
IDR = 5A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
900
V
2
2
1.5
5
V
2.8
Ω
3.5
S
−1.6
V
1400
pF
140
pF
60
pF
30
ns
60
ns
60
ns
170
ns
Turn-on time (delay time)
td(on)
Rise time
tr
VDD = 200V, ID = 3A
Fall time
tf
VGS = 10V, RL = 66.6Ω
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case
Rth(ch-c)
2.5
°C/W
Thermal resistance between channel and atmosphere
Rth(ch-a)
62.5
°C/W
1
Power F-MOS FETs
2SK2340
PD  Ta
Area of safe operation (ASO)
Drain current ID (A)
IDP
10
t=100ms
ID
1ms
10ms
1
DC
0.1
Allowable power dissipation PD (W)
60
Non repetitive pulse
TC=25˚C
100
(1) TC=Ta
(2) Without heat sink
(PD=2W)
50
40
30
(1)
20
10
TC=25˚C
30
Avalanche current IAS (A)
100
IAS  L-load
10
3
45mJ
1
0.3
(2)
0.01
0
1
10
100
1000
0
Drain to source voltage VDS (V)
40
20
ID  VGS
Vth  TC
4
2
2
3
4
5
6
5
4
3
2
1
7
Gate to source voltage VGS (V)
25
50
75
100
125
Forward transfer admittance |Yfs| (S)
5
4
3
VGS=10V
2
15V
1
0
2.5A
0
8
Drain current ID (A)
10
5
10
15
20
25
30
Gate to source voltage VGS (V)
Ciss, Coss, Crss  VDS
10000
VDS=25V
TC=25˚C
5
f=1MHz
TC=25˚C
1000
4
3
2
1
0
6
5A
10
| Yfs |  ID
TC=25˚C
4
20
150
6
2
ID=10A
30
Case temperature TC (˚C)
RDS(on)  ID
0
40
0
0
6
10
TC=25˚C
VDS=25V
ID=1mA
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
1
3
VDS  VGS
0
0
1
50
Drain to source voltage VDS (V)
6
Gate threshold voltage Vth (V)
Drain current ID (A)
8
0
0.3
L-load (mH)
6
VDS=25V
TC=25˚C
Drain to source ON-resistance RDS(on) (Ω)
0.1
0.1
80 100 120 140 160
Ambient temperature Ta (˚C)
10
2
60
0
1
2
3
4
5
6
Drain current ID (A)
7
8
Ciss
100
Coss
Crss
10
1
0
40
80
120
160
200
Drain to source voltage VDS (V)
Power F-MOS FETs
2SK2340
VDS, VGS  Qg
Rth(t)  t
12
VDS
8
400
VGS
300
6
200
4
100
2
0
0
10
20
30
40
50
0
60
Gate charge amount Qg (nC)
Thermal resistance Rth(t) (˚C/W)
10
500
100
Gate to source voltage VGS (V)
Drain to source voltage VDS (V)
600
(1)
Notes: Rth was measured at Ta=25˚C
and under natural convection.
(1) without heat sink
(2) with a 50 × 50 × 2mm Al heat sink
(2)
10
1
0.1
0.01
10–4
10–3
10–2
10–1
1
10
102
103
Time t (s)
3