PANASONIC PUB4702

Power Transistor Arrays (F-MOS FETs)
PUB4702
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
● No secondary breakdown
● Low-voltage drive
● Incorporating built-in zener diodes
unit: mm
4.4±0.5
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
4.0±0.2
8.0
9.5±0.2
■ Applications
1.65±0.2
25.3±0.2
0.5±0.15
0.8±0.25
1.0±0.25
0.5±0.15
2.54±0.2
9✕2.54=22.86±0.25
C1.5±0.5
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Ratings
Unit
Drain to Source breakdown voltage
VDSS
35 ± 10
V
Gate to Source voltage
VGSS
±15
V
DC
ID
±1
A
Pulse
IDP
±2
A
EAS*
2.5
mJ
Drain current
Avalanche energy capacity
*
1
Symbol
Allowable power
TC = 25°C
dissipation
Ta = 25°C
15
PD
2
3
4
5
6
7
8
9 10
G: Gate
D: Drain
S: Source
10-Lead Plastic SIL Package
W
3.5
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 5mH, IL = 1A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 25V, VGS = 0
10
µA
Gate to Source leakage current
IGSS
VGS = ±15V, VDS = 0
±10
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
25
45
V
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
1
2.5
V
RDS(on)1
VGS = 10V, ID = 0.5A
220
380
mΩ
RDS(on)2
VGS = 4V, ID = 0.5A
390
680
mΩ
−1.5
V
Drain to Source ON-resistance
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 0.5A
Diode forward voltage
VDSF
IDR = 1A, VGS = 0
Input capacitance (Common Source) Ciss
0.6
1
S
135
pF
85
pF
Reverse transfer capacitance (Common Source) Crss
50
pF
Turn-on time
ton
120
ns
Fall time
tf
390
ns
Turn-off time (delay time)
td(off)
800
ns
Output capacitance (Common Source)
Coss
VDS = 10V, VGS = 0, f = 1MHz
VGS = 10V, ID = 0.5A
VDD = 25V, RL = 50Ω
1
Power Transistor Arrays (F-MOS FETs)
PD  Ta
Area of safe operation (ASO)
IDP
Allowable power dissipation PD (W)
t=1ms
100ms
1
10ms
0.3
0.1
0.03
0.3
2.00
14
12
(1)
10
8
6
(2)
4
2
3
10
30
600
85˚C
25˚C
400
300
200
100
VGS=4V
0
40
60
VDS=10V
Ta=25˚C
1.5
1.0
0.5
4
5
0
0.5
1.0
1.5
Drain current ID (A)
Rth(t)  t
Thermal resistance Rth(t) (˚C/W)
102
Notes: Rth was measured at Ta=25˚C
and under natural convection.
Without heat sink
10
1
10–2
10–1
Time t (s)
2
0
1
1
2
3
4
5
Gate to source voltage VGS (V)
Ciss, Coss, Crss  VDS
2.0
Drain current ID (A)
10–3
0.50
80 100 120 140 160
0
3
0.75
| Yfs |  ID
Ta=150˚C
2
1.00
Ambient temperature Ta (˚C)
Forward transfer admittance |Yfs| (S)
Drain to source ON-resistance RDS(on) (mΩ)
20
2.5
1
1.25
0
0
RDS(on)  ID
500
1.50
0.25
0
1
700
10–1
10–4
1.75
(3)
Drain to source voltage VDS (V)
0
VDS=10V
Ta=25˚C
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
10
2.0
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
Drain current ID (A)
16
Non repetitive pulse
TC=25˚C
3
ID  VGS
Drain current ID (A)
10
PUB4702
103
f=1MHz
Ta=25˚C
Ciss
102
Coss
Crss
10
0
5
10
15
20
25
Drain to source voltage VDS (V)