Power Transistor Arrays (F-MOS FETs) PUB4702 Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● Incorporating built-in zener diodes unit: mm 4.4±0.5 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 4.0±0.2 8.0 9.5±0.2 ■ Applications 1.65±0.2 25.3±0.2 0.5±0.15 0.8±0.25 1.0±0.25 0.5±0.15 2.54±0.2 9✕2.54=22.86±0.25 C1.5±0.5 ■ Absolute Maximum Ratings (TC = 25°C) Parameter Ratings Unit Drain to Source breakdown voltage VDSS 35 ± 10 V Gate to Source voltage VGSS ±15 V DC ID ±1 A Pulse IDP ±2 A EAS* 2.5 mJ Drain current Avalanche energy capacity * 1 Symbol Allowable power TC = 25°C dissipation Ta = 25°C 15 PD 2 3 4 5 6 7 8 9 10 G: Gate D: Drain S: Source 10-Lead Plastic SIL Package W 3.5 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C L = 5mH, IL = 1A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 25V, VGS = 0 10 µA Gate to Source leakage current IGSS VGS = ±15V, VDS = 0 ±10 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 25 45 V Gate threshold voltage Vth VDS = 10V, ID = 1mA 1 2.5 V RDS(on)1 VGS = 10V, ID = 0.5A 220 380 mΩ RDS(on)2 VGS = 4V, ID = 0.5A 390 680 mΩ −1.5 V Drain to Source ON-resistance Forward transfer admittance | Yfs | VDS = 10V, ID = 0.5A Diode forward voltage VDSF IDR = 1A, VGS = 0 Input capacitance (Common Source) Ciss 0.6 1 S 135 pF 85 pF Reverse transfer capacitance (Common Source) Crss 50 pF Turn-on time ton 120 ns Fall time tf 390 ns Turn-off time (delay time) td(off) 800 ns Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz VGS = 10V, ID = 0.5A VDD = 25V, RL = 50Ω 1 Power Transistor Arrays (F-MOS FETs) PD Ta Area of safe operation (ASO) IDP Allowable power dissipation PD (W) t=1ms 100ms 1 10ms 0.3 0.1 0.03 0.3 2.00 14 12 (1) 10 8 6 (2) 4 2 3 10 30 600 85˚C 25˚C 400 300 200 100 VGS=4V 0 40 60 VDS=10V Ta=25˚C 1.5 1.0 0.5 4 5 0 0.5 1.0 1.5 Drain current ID (A) Rth(t) t Thermal resistance Rth(t) (˚C/W) 102 Notes: Rth was measured at Ta=25˚C and under natural convection. Without heat sink 10 1 10–2 10–1 Time t (s) 2 0 1 1 2 3 4 5 Gate to source voltage VGS (V) Ciss, Coss, Crss VDS 2.0 Drain current ID (A) 10–3 0.50 80 100 120 140 160 0 3 0.75 | Yfs | ID Ta=150˚C 2 1.00 Ambient temperature Ta (˚C) Forward transfer admittance |Yfs| (S) Drain to source ON-resistance RDS(on) (mΩ) 20 2.5 1 1.25 0 0 RDS(on) ID 500 1.50 0.25 0 1 700 10–1 10–4 1.75 (3) Drain to source voltage VDS (V) 0 VDS=10V Ta=25˚C (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink 10 2.0 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) Drain current ID (A) 16 Non repetitive pulse TC=25˚C 3 ID VGS Drain current ID (A) 10 PUB4702 103 f=1MHz Ta=25˚C Ciss 102 Coss Crss 10 0 5 10 15 20 25 Drain to source voltage VDS (V)