ETC 2SK1846

Power F-MOS FETs
2SK1846
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 20mJ
● VGSS = ±30V guaranteed
● High-speed switching: tf = 35ns
● No secondary breakdown
unit: mm
3.4±0.3
8.5±0.2
6.0±0.5
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
1.5±0.1
10.0±0.3
■ Applications
1.0±0.1
1.1max.
2.0
10.5min.
1.5max.
0.8±0.1
0.5max.
2.54±0.3
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source breakdown voltage
VDSS
800
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±3
A
Pulse
IDP
±6
A
EAS*
20
mJ
Drain current
Avalanche energy capacity
Allowable power
TC = 25°C
dissipation
Ta = 25°C
Channel temperature
Storage temperature
*
5.08±0.5
40
PD
1
2
3
1: Gate
2: Drain
3: Source
N Type Package
W
1.3
Tch
150
°C
Tstg
−55 to +150
°C
L = 4.5mH, IL = 3A, VDD = 50V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 640V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VDS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 2A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 2A
Diode forward voltage
VDSF
IDR = 3A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case
Rth(ch-c)
VGS = 10V, ID = 2A
VDD = 200V, RL = 100Ω
800
V
1
3.2
1.5
5
V
4
Ω
2.4
S
−1.6
V
730
pF
90
pF
40
pF
40
ns
35
ns
105
ns
3.125
°C/W
1
Power F-MOS FETs
2SK1846
| Yfs |  ID
6
7V 10V
VGS=15V
5
6V
4
3
2
5V
1
40W
Forward transfer admittance |Yfs| (S)
3
TC=25˚C
VDS=25V
TC=25˚C
100˚C
2
150˚C
1
4V
0
0
0
10
20
30
40
50
60
0
1
Drain to source voltage VDS (V)
5
3
2
1
0
6
8
100
Coss
30
Crss
0˚C
2
0
1
50
100
150
Non repetitive pulse
TC=25˚C
30
10 I
DP
t<10µs
ID
3
1
t=100µs
0.3
1ms
0.1
DC
10ms
0.03
(2)
0.01
80 100 120 140 160
Ambient temperature Ta (˚C)
5
6
75
50
ton
tf
25
0
1
2
3
4
5
6
Drain current ID (A)
EAS  Tj
30
10
0
4
td(off)
100
Area of safe operation (ASO)
Drain current ID (A)
20
3
125
200
40
(1)
2
VDD=200V
VGS=10V
TC=25˚C
Drain to source voltage VDS (V)
(1) TC=Ta
(2) Without heat sink
(PD=1.3W)
60
25˚C
0
10
100
40
4
ton, tf, td(off)  ID
Ciss
0
PD  Ta
20
100˚C
Drain current ID (A)
300
10
50
0
6
f=1MHz
TC=25˚C
Gate to source voltage VGS (V)
30
TC=150˚C
150
1000
4
8
0
Switching time ton,tf,td(off) (ns)
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
150˚C
2
10
6
3000
4
0
VGS=10V
Ciss, Coss, Crss  VDS
TC=0˚C 25˚C 100˚C
5
Drain current ID (A)
4
10000
VDS=25V
Allowable power dissipation PD (W)
3
12
Drain current ID (A)
ID  VGS
6
2
2
1
3
10
30
100
300
1000
Drain to source voltage VDS (V)
Avalanche energy capacity EAS (mJ)
Drain current ID (A)
RDS(on)  ID
Drain to source ON-resistance RDS(on) (Ω)
ID  VDS
ID=3A
25
20
15
10
5
0
25
50
75
100
125
150
Junction temperature Tj (˚C)
Power F-MOS FETs
2SK1846
VDS, VGS  Qg
700
Drain to source voltage VDS (V)
Gate threshold voltage Vth (V)
VDS=25V
ID=1mA
5
4
3
2
1
0
0
25
50
75
100
125
Case temperature TC (˚C)
150
TC=25˚C
600
15
500
12.5
VDS
400
10
7.5
300
VGS
200
5
100
2.5
0
0
10
20
30
40
80
17.5
ID=3A
Drain to source voltage VDS (V)
6
VDS  VGS
Gate to source voltage VGS (V)
Vth  TC
RG
50
40
30
ID=6A
20
0.75A
3A
10
1.5A
0
0
50
0
5
10
15
20
25
30
Gate to source voltage VGS (V)
Avalanche energy capacity test circuit
RL
PG
60
Gate charge amount Qg (nC)
Switching measurement circuit
D.U.T
70
L
D.U.T
VDD
PG
VDD
RG
3