ETC 2SK2495

Power F-MOS FETs
2SK2495
Silicon N-Channel Power F-MOS FET
■ Features
unit: mm
● Avalanche energy capacity guaranteed
● High-speed switching
● No secondary breakdown
3.4±0.3
8.5±0.2
6.0±0.5
● High-speed switching (switching power supply)
● For high-frequency power amplification
1.5±0.1
10.0±0.3
■ Applications
1.0±0.1
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
Ratings
Unit
VDSS
250
V
VGSS
±30
V
DC
ID
±2
A
Pulse
IDP
±4
A
EAS*
10
mJ
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
*
Allowable power
TC = 25°C
dissipation
Ta = 25°C
1.1max.
2.0
10.5min.
1.5max.
0.8±0.1
0.5max.
2.54±0.3
5.08±0.5
30
PD
1
2
3
1: Gate
2: Drain
3: Source
N Type Package
W
1.3
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 5mH, IL = 2A, VDD = 30V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
IDSS
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 1A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 1A
Diode forward voltage
VDSF
IDR = 2A, VGS = 0
min
typ
VDS = 200V, VGS = 0
Input capacitance (Common Source) Ciss
max
Unit
100
µA
±1
µA
V
250
1
1.2
0.5
5
V
2
Ω
−1.6
V
S
1
220
pF
60
pF
Reverse transfer capacitance (Common Source) Crss
20
pF
Turn-on time (delay time)
td(on)
10
ns
Rise time
tr
VDD = 200V, ID = 2A
20
ns
Fall time
tf
VGS = 10V, RL = 100Ω
45
ns
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case
Rth(ch-c)
4.17
°C/W
Thermal resistance between channel and atmosphere
Rth(ch-a)
96.2
°C/W
Output capacitance (Common Source)
Coss
VDS = 10V, VGS = 0, f = 1MHz
90
ns
1
Power F-MOS FETs
2SK2495
PD  Ta
Area of safe operation (ASO)
100
IDP
3
t=1ms
ID
1
10ms
100ms
0.3
DC
0.1
0.03
(1) TC=Ta
(2) Without heat sink
(PD=1.3W)
(1)
30
20
10
(2)
0.01
10
30
100
300
1000
40
0
Drain to source voltage VDS (V)
80
120
ID  VDS
VGS=10.0V
9.0V
Drain current ID (A)
7.0V
3
6.5V
30W
2
6.0V
5.5V
1
3
2
1
5.0V
0
0
12
16
20
0
Drain to source voltage VDS (V)
2
4
6
8
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
2
1
0
2
3
4
Drain current ID (A)
5
100
125
150
175
4
3
TC=100˚C
2
25˚C
1
0˚C
0
0
1
2
3
4
td(on), tr, tf, td(off)  ID
120
f=1MHz
TC=25˚C
300
Ciss
100
30
Coss
10
5
Drain current ID (A)
Ciss, Coss, Crss  VDS
VDS=25V
TC=25˚C
75
VGS=10V
10
1000
1
50
5
Gate to source voltage VGS (V)
| Yfs |  ID
3
0
2
Junction temperature Tj (˚C)
Crss
3
Switching time td(on),tr,tf,td(off) (ns)
Drain current ID (A)
4
8.0V
8
4
RDS(on)  ID
VDS=10V
TC=25˚C
TC=25˚C
4
6
ID  VGS
5
0
8
Ambient temperature Ta (˚C)
5
4
160
Drain to source ON-resistance RDS(on) (Ω)
3
VDD=30V
ID=2A
10
0
25
0
1
Forward transfer admittance |Yfs| (S)
Avalanche energy capacity EAS (mJ)
Allowable power dissipation PD (W)
10
Drain current ID (A)
12
40
Non repetitive pulse
TC=25˚C
30
2
EAS  Tj
VDD=200V
VGS=10V
TC=25˚C
100
td(off)
80
60
tf
40
tr
20
td(on)
0
1
0
50
100
150
200
250
Drain to source voltage VDS (V)
0
1
2
3
4
Drain current ID (A)
5