PANASONIC 2SK1478

Power F-MOS FETs
2SK1478
Silicon N-Channel Power F-MOS FET
■ Features
unit: mm
14.0±0.5
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
5.5±0.2
7.5±0.2
4.2±0.2
2.7±0.2
φ3.1±0.1
4.0
■ Applications
4.2±0.2
10.0±0.2
1.4±0.1
Solder Dip
16.7±0.3
0.7±0.1
● Low ON-resistance RDS(on): RDS(on) = 0.4Ω (typ.)
● High-speed switching: tf = 44ns (typ.)
● No secondary breakdown
● High breakdown voltage, large allowable power dissipation
0.8±0.1
1.3±0.2
0.5 +0.2
–0.1
2.54±0.25
■ Absolute Maximum Ratings (TC = 25°C)
5.08±0.5
1
Parameter
Symbol
Ratings
Unit
Drain to Source breakdown voltage
VDSS
250
V
Gate to Source voltage
VGSS
±20
V
Drain current
DC
ID
±8
A
Pulse
IDP
±16
A
Allowable power
TC = 25°C
dissipation
Ta = 25°C
40
PD
2
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
3
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 200V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±20V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 5A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 5A
250
V
1
0.4
V
0.6
Ω
4.7
S
1100
pF
200
pF
Reverse transfer capacitance (Common Source) Crss
60
pF
Turn-on time
ton
72
ns
Fall time
tf
44
ns
Turn-off time (delay time)
td(off)
136
ns
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 10V, VGS = 0, f = 1MHz
VGS = 10V, ID = 5A
VDD = 100V, RL = 20Ω
2.7
5
1
Power F-MOS FETs
2SK1478
ID  VDS
| Yfs |  ID
12
9V
VGS=10V
8V
10
8
7V
6
4
6V
2
5V
0
0
5
10
15
20
25
VDS=10V
TC=25˚C
10
8
6
4
2
0
0
30
5
ID  VGS
20
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10
8
6
4
2
0
4
6
8
10
100
Coss
30
Crss
10
0
1
50
100
150
200
250
Drain to source voltage VDS (V)
Area of safe operation (ASO)
(1) TC=Ta
(2) Without heat sink
(PD=2W)
30
20
Drain current ID (A)
40
(1)
Non repetitive pulse
TC=25˚C
IDP
t=100µs
1ms
ID
10
3
DC
1
0.3
100ms
10ms
0.1
10
0.03
(2)
0
0.01
60
80 100 120 140 160
Ambient temperature Ta (˚C)
2
4
6
8
10
VDD=100V
VGS=10V
TC=25˚C
250
200
td(off)
150
ton
100
tf
50
3
100
40
0
ton, tf, td(off)  ID
Ciss
0
PD  Ta
20
0.1
Drain current ID (A)
300
12
50
0
0.2
f=1MHz
TC=25˚C
3000
Gate to source voltage VGS (V)
30
0.3
300
1000
2
0.4
Ciss, Coss, Crss  VDS
VDS=10V
TC=25˚C
0
VGS=10V
TC=25˚C
0.5
25
10000
12
Drain current ID (A)
15
0.6
Drain current ID (A)
Drain to source voltage VDS (V)
Allowable power dissipation PD (W)
10
Switching time ton,tf,td(off) (ns)
Drain current ID (A)
14
Forward transfer admittance |Yfs| (S)
TC=25˚C
Drain to source ON-resistance RDS(on) (Ω)
12
16
2
RDS(on)  ID
1
3
10
30
100
300
1000
Drain to source voltage VDS (V)
0
0
5
10
15
20
Drain current ID (A)
25