ETC 2SK2122

Power F-MOS FETs
2SK2122
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed: EAS > 3.2mJ
● High-speed switching: tf = 50ns
● No secondary breakdown
unit: mm
4.6±0.2
+0.5
13.7–0.2
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol
Unit
Drain to Source breakdown voltage
VDSS
250
V
Gate to Source voltage
Drain current
VGSS
±20
V
DC
ID
±8
A
Pulse
IDP
±16
A
EAS*
3.2
mJ
Avalanche energy capacity
*
Ratings
Allowable power
TC = 25°C
dissipation
Ta = 25°C
40
PD
3.0±0.2
15.0±0.3
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
2.9±0.2
4.1±0.2 8.0±0.2
Solder Dip
φ3.2±0.1
■ Applications
9.9±0.3
2.6±0.1
1.2±0.15
1.45±0.15
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7
1 2 3
1: Gate
2: Drain
3: Source
TO-220E Package
W
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 0.1mH, IL = 8A, VDD = 50V, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain to Source cut-off current
IDSS
VDS = 200V, VGS = 0
0.1
mA
Gate to Source leakage current
IGSS
VGS = ±20V, VDS = 0
±1
µA
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 10V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 5A
Forward transfer admittance
| Yfs |
VDS = 10V, ID = 5A
Diode forward voltage
VDSF
IDR = 8A, VGS = 0
Input capacitance (Common Source) Ciss
Output capacitance (Common Source)
Coss
VDS = 10V, VGS = 0, f = 1MHz
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
VGS = 10V, ID = 5A
Fall time
tf
VDD = 100V, RL = 20Ω
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case
Rth(ch-c)
250
V
2
0.4
2.7
5
V
0.6
Ω
4.7
S
−1.7
V
1100
pF
200
pF
60
pF
20
ns
20
ns
30
ns
130
ns
3.125
°C/W
1
Power F-MOS FETs
2SK2122
PD  Ta
Area of safe operation (ASO)
100
IDP
10 ID
t=100µs
3
1ms
10ms
100ms
1
0.3
DC
0.1
0.03
(1) TC=Ta
(2) Without heat sink
(PD=2W)
1
3
10
30
100
300
30
(1)
20
7.5V
8
7V
6
6.5V
4
6V
40W
0
0
40
20
60
80 100 120 140 160
4
2
0
VDS=25V
ID=1mA
6.2
6.0
5.8
5.6
5.4
5.2
5
4
3
2
1
0
5.0
4
6
8
10
12
0
Gate to source voltage VGS (V)
25
50
75
100
125
150
RDS(on)  ID
Forward transfer admittance |Yfs| (S)
0.5
VGS=10V
15V
0.3
0.2
0.1
0
2
4
6
8
Drain current ID (A)
10
75
100
125
150
Ciss, Coss, Crss  VDS
VDS=10V
TC=25˚C
7
f=1MHz
TC=25˚C
3000
Ciss
1000
6
5
4
3
2
1
0
0
50
10000
8
TC=25˚C
25
Case temperature TC (˚C)
| Yfs |  ID
0.6
0.4
0
Case temperature TC (˚C)
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
2
20
Vth  TC
VDS=10V
ID=3A
6.4
15
6
Gate threshold voltage Vth (V)
Gate to source voltage VGS (V)
125˚C
150˚C
10
Drain to source voltage VDS (V)
VGS  TC
6
0
5
0
Ambient temperature Ta (˚C)
6.6
TC=0˚C
25˚C
75˚C
5.5V
5V
(2)
1000
8
Drain current ID (A)
10
2
ID  VGS
VDS=10V
10V
12
10
Drain to source voltage VDS (V)
10
VGS=15V
40
0
0.01
Drain to source ON-resistance RDS(on) (Ω)
TC=25˚C
14
Drain current ID (A)
Allowable power dissipation PD (W)
Drain current ID (A)
16
50
Non repetitive pulse
TC=25˚C
30
2
ID  VDS
0
2
4
6
8
10
12
Drain current ID (A)
14
16
300
100
Coss
30
Crss
10
3
1
0
40
80
120
160
200
Drain to source voltage VDS (V)