High-reliability discrete products and engineering services since 1977 3N204-3N205 DUAL GATE MOSFET VHF AMPLIFIER FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristic Symbol Min Typ Max Unit mmhos SMALL SIGNAL CHARACTERISTICS Forward transfer admittance(3) (VDS = 15Vdc, VG2S = 4.0Vdc, VG1S = 0, f = 1.0kHz) |Yfs| 3N201, 3N202 3N203 Input capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Ciss Reverse transfer capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0MHz) Crss Output capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Coss 8.0 7.0 12.8 12.5 20 15 - 3.3 - 0.005 0.014 0.03 - 1.7 - pF pF pF FUNCTIONAL CHARACTERISTICS Noise figure (VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz) (VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz) 3N201 3N203 NF - 1.8 5.3 4.5 6.0 Common source power gain (VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz) (VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz) (VDD = 18Vdc, fLO = 245MHz, fRF = 200MHz) 3N201 3N203 3N202 Gps 15 20 15 20 25 19 25 30 25 Bandwidth (VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHz) (VDD = 18Vdc, fLO = 245MHz, fRF = 200MHz) (VDD = 18Vdc, VGG = 6.0Vdc, f = 45MHz) 3N201 3N202 3N203 5.0 4.5 3.0 - 9.0 7.5 6.0 Gain control gate-supply voltage (4) (VDD = 18Vdc, ΔGps = -30dB, f = 200MHz) (VDD = 18Vdc, ΔGps = -30dB, f = 45MHz) 3N201 3N203 0 0 -1.0 -0.6 -3.0 -3.0 Gc(5) BW VGG(GC) dB dB MHz Vdc ELECTRICAL CHARACTERISTICS (TC = 25°C) CHARACTERISTIC SYMBOL MIN MAX UNIT Drain-Source Breakdown Voltage (lD=10μA, VG1=VG2=-5.0V) V(BR)DSX 25 - Vdc Gate 1-Source Breakdown Voltage (lG1=+/- 10 mA) Note 1 V(BR)G1SO +/-6 +/-30 Vdc Gate 2-Source Breakdown Voltage (lG2=+/-10mA) Note 1 V(BR)G2SO +/-6 +/-30 Vdc - +/-10 nA lG2SS - +/-10 nA VG1S(off) -0.5 -4.0 Vdc OFF CHARACTERISTICS Gate 1 Leakage Current (VG1S=+/-5.0V, VG2S=VDS=0) Gate 2 Leakage Current (VG2S=+/-5.0V, VG1S=VDS=0) Gate 1 to Source Cutoff Voltage (VDS=15V, VG2S=4.0V, lD=20μA) lG1SS Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N204-3N205 DUAL GATE MOSFET VHF AMPLIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C) CHARACTERISTIC Gate 2 to Source Cutoff Voltage (VDS=15V, VG1S=0V, lD=20μA) SYMBOL MIN MAX UNIT VG2S(off) -0.2 -4.0 Vdc lDSS* 6 30 mA │Yfs│ 10 22 mmhos ON CHARACTERISTICS Zero-Gate-Voltage Drain Current * (VDS=15V, VG2S=4.0V, VG1S=0V) SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS=15V, VG2S=4.0V, VG1S=0V, f=1.0kHz) Note 2 Input Capacitance (VDS=15V, VG2S=4.0V, lD=lDSS, f=1.0Mhz) Ciss Reverse Transfer Capacitance (VDS=15V, VG2S=4.0V, lD=10mA, f=1.0MHz) Crss Output Capacitance (VDS=15V, VG2S=4.0V, lD=lDSS, f=1.0MHz) Coss TYP.3.0 0.005 pF 0.03 pF TYP. 1.4 pF FUNCTIONAL CHARACTERISTICS Noise Figure (VDD=18V, VGG=7.0V, f=200MHz) 3N204 (VDS=15V, VG2S=4.0v, lD=10mA, f=450MHZ) 3N204 NF - 3.5 5.0 dB Common Source Power Gain (VDD=18V, VGG=7.0V, f=200MHz) 3N204 (VDS=15V, VG2S=4.0V, lD=10mA, f=450MHz) 3N204 Gps 20 14 28 - dB Bandwidth (VDD=18V, VGG=7.0V, f=200MHz) (VDD=18V, fLO=245MHz, fRF=200MHz)Note 4 3N204 3N205 BW 7.0 4.0 12 7.0 MHz Gain Control Gate Supply Voltage(Note 3) (VDD=18V, GPS=300dB,f=200MHz) 3N204 VGG(GC) 0 -2.0 Vdc Conversion Gain (Note 4) (VDD=18V, fLO=245MHz, fRF=200MHz) 3N205 G(conv.) 17 28 dB *PW=30μs, Duty Cycle ≤ 2.0%. 1) All gate breakdown voltages are measured while the device is conducting rated gate current. This insures that the gate voltage limiting network is functioning properly. 2) This parameter must be measured with bias voltages applied for less than five (5) seconds to avoid overheating. 3) Gps is defined as the change in Gps from the value at VGG=7.0V. 4) Amplitude at input from local oscillator is 3 volts RMS. Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N204-3N205 DUAL GATE MOSFET VHF AMPLIFIER MECHANICAL CHARACTERISTICS Case: TO-72 Marking: Body painted, alpha-numeric Pin out: See below Rev. 20120705