ETC AT-38043

NPN Silicon Bipolar Common
Emitter Transistor
Technical Data
AT-38043
Features
• Operates Over a Wide Range
of Voltages and Frequencies
Surface Mount Package
SOT-343 (SC-70)
Outline 4T
• +25.0 dBm P1dB and 60%
Collector Efficiency @
900 MHz, 4.8 Volts, Typ.
• 15 dB G1dB @ 900 MHz,
4.8 Volts, Typ.
• -35 dBc IMD3 @ Pout of
+14 dBm per tone, 900 MHz,
3 Volts, Typ.
• +21.5 dBm P1 dB and 50%
Collector Efficiency @
1900 MHz, 3 Volts, Typ.
Applications
• Driver Amplifier for GSM
and AMPS/ETACS/NMT
Cellular Phones
• 900 and 1800 MHz ISM
• Special Mobile Radio, CATV
• 1900 MHz US PCS
Pin Configuration
2
3
Emitter
4
Collector
Base
1
Emitter
Description
Hewlett Packard’s AT-38043 is a
low cost, NPN silicon bipolar
junction transistor housed in a
miniature SC-70 surface mount
plastic package. This device can
be used as a pre-driver, driver, or
output device in many applications for cellular and other
wireless communications markets. At 4.8 volts, the AT-38043
features +25 dBm output power,
while providing 15 dB of gain and
60% collector efficiency. Superior
efficiency and gain make the
AT-38043 an excellent choice for
battery powered systems.
The AT-38043 is fabricated with
Hewlett Packard’s 10 GHz Ft SelfAligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, selfalignment techniques, and gold
metalization in the fabrication of
these devices.
2
AT-38043 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Units
Absolute
Maximum[1]
V
V
V
mA
mW
°C
°C
1.4
16.0
9.5
160
500
150
-65 to 150
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2]
Junction Temperature
Storage Temperature
Thermal Resistance[3]:
θjc = 130°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. Derate at 7.7 mW/°C for TC > 85°C.
TC is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.
3. Using the liquid crystal technique,
VCE = 4.8 V, IC = 50 mA, TJ = 150°C,
1– 2 µm “hot-spot” resolution.
Electrical Specifications, TC = 25°C
Freq. = 900 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit A, unless otherwise specified
Symbol
P1dB
Parameters and Test Conditions
Output Power @ 1 dB Gain
Compression[1]
Gain [1]
G1dB
1 dB Compression
ηC
Collector Efficiency @ 1 dB Gain Compression[1]
Mismatch Tolerance, No Damage [1]
IMD3
3rd Order Intermodulation Distortion,
2-Tone Test, Pout each tone = +14 dBm [1]
BVEBO
Emitter-Base Breakdown Voltage
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage
hFE
Forward Current Transfer Ratio
ICEO
Collector Leakage Current
Units
Min.
Typ.
dBm
+23.5
+25.0
dB
13.5
15.0
%
45
60
Pout = +25 dBm
any phase, 2 sec duration
F1 = 899 MHz
F2 = 901 MHz
VCE = 3.0 V
Max.
7:1
dBc
–35
IE = 0.2 mA, open collector
V
1.4
IC = 1.0 mA, open emitter
V
16.0
IC = 3.0 mA, open base
V
9.5
VCE = 3 V, IC = 160 mA
—
50
VCEO = 5 V
µA
Note:
1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A.
150
330
15
3
AT-38043 Typical Performance, TC = 25°C
8
20
G 1dB
4
450
800
900
1000
0
1800 1900 2000
80
17
ηc
13
9
20
800
FREQUENCY (MHz)
-30
IMD5
-50
-60
40
G 1dB
10
20
800
16
17
OUTPUT POWER/TONE (dBm)
Figure 4. IMD3, IMD5 vs. Output
Power (per tone) at VCE = 3.0 V and
ICQ = 15 mA, Frequency = 450 MHz.
900
1000
0
1800 1900 2000
FREQUENCY (MHz)
0
Γsource = 0.854 -142
Γload = 0.650 173
-10
-30
IMD3
-40
IMD5
-50
-60
10 11 12 13 14 15
60
-20
IMD3
-40
-50
9
15
80
Figure 3. Output Power, Gain, and
Collector Efficiency vs. Frequency
at VCE = 4.8 V, ICQ = 15 mA.
-20
IMD5
8
ηc
20
5
450
0
1800 1900 2000
Γsource = 0.865 -164
Γload = 0.500 153
-10
IMD (dBc)
IMD (dBc)
0
-30
-40
1000
P 1dB
25
FREQUENCY (MHz)
IMD3
-20
900
Figure 2. Output Power, Gain, and
Collector Efficiency vs. Frequency
at VCE = 3.0 V, ICQ = 15 mA.
Γsource = 0.855 170
Γload = 0.576 149
-10
40
G 1dB
5
450
Figure 1. Output Power, Gain, and
Collector Efficiency vs. Frequency
at VCE = 1.2 V, ICQ = 15 mA.
0
60
100
-60
2
4
6
8
10 12 14 16 18 20
OUTPUT POWER/TONE (dBm)
Figure 5. IMD3, IMD5 vs. Output
Power (per tone) at VCE = 3.0 V and
ICQ = 15 mA, Frequency = 900 MHz.
1
3
5
7
9
11 13 15 17 19 21
OUTPUT POWER/TONE (dBm)
Figure 6. IMD3, IMD5 vs. Output
Power (per tone) at VCE = 3.0 V and
ICQ = 15 mA, Frequency = 1900 MHz.
COLLECTOR EFFICIENCY (%)
ηc
21
30
OUTPUT POWER (dBm), GAIN (dB)
40
100
P 1dB
IMD (dBc)
12
OUTPUT POWER (dBm), GAIN (dB)
60
COLLECTOR EFFICIENCY (%)
OUTPUT POWER (dBm), GAIN (dB)
P 1dB
16
25
COLLECTOR EFFICIENCY (%)
80
20
4
AT-38043 Typical Performance Under Pulsed Operation,
TC = 25°C
VCE = 3.0 V, ICQ = 15 mA, pulse width = 577 µs, unless otherwise specified
Frequency = 900 MHz
Duty Cycle
Parameters
P 1dB
12.5%
22.8
33%
22.7
50%
22.6
100% = CW
22.5
G1dB
13.7
13.6
13.5
13.4
ηc
57.6
58.0
57.3
56.1
P 3dB
23.5
23.5
23.5
23.6
G 3dB
11.7
11.6
11.5
11.4
ηc
64.5
65.7
66.0
66.0
Frequency = 1900 MHz
Duty Cycle
Parameters
P 1dB
12.5%
21.7
33%
21.6
50%
21.6
100% = CW
21.6
G1dB
7.4
7.4
7.3
7.3
ηc
51.7
52.0
52.2
50.4
P 3 dB
24.1
23.9
23.8
23.8
G 3 dB
5.4
5.5
5.3
5.3
ηc
64.6
64.3
64.5
63.1
5
AT-38043 Typical Large Signal Impedances
Freq.
( MHz )
Bias
VCE (V) ICQ (mA)
Γsource
Mag.
Ang.
Γload
Mag.
Ang.
450
450
450
800
800
800
1.2
3.0
4.8
1.2
3.0
4.8
15.0
15.0
15.0
15.0
15.0
15.0
0.873
0.855
0.873
0.886
0.896
0.899
169.4
170.3
176.3
-166.6
-170.9
-167.8
0.602
0.576
0.593
0.607
0.505
0.530
163.5
148.7
133.2
173.4
151.1
131.0
900
900
900
900
900
1000
1000
1000
1800
1800
1800
1.2
3.0
3.6
4.8
6.0
1.2
3.0
4.8
1.2
3.0
4.8
15.0
15.0
15.0
15.0
15.0
15.0
15.0
15.0
15.0
15.0
15.0
0.861
0.865
0.897
0.877
0.872
0.867
0.877
0.881
0.830
0.863
0.870
-160.1
-164.1
-165.9
-165.7
-166.4
-162.9
-163.7
-162.7
-138.2
-145.3
-146.2
0.576
0.500
0.528
0.479
0.494
0.656
0.590
0.575
0.598
0.633
0.603
175.4
153.3
147.6
137.9
128.2
171.0
150.5
139.8
-176.1
175.8
164.3
1900
1900
1900
1900
1900
2000
2000
2000
1.2
3.0
3.6
4.8
6.0
1.2
3.0
4.8
15.0
15.0
15.0
15.0
15.0
15.0
15.0
15.0
0.839
0.854
0.895
0.842
0.907
0.855
0.866
0.864
-138.4
-142.0
-149.4
-138.2
-149.3
-143.5
-140.1
-140.0
0.642
0.650
0.666
0.610
0.636
0.705
0.673
0.682
-178.5
172.6
171.1
166.4
156.4
177.5
173.0
163.0
6
AT-38043 Spice Model Parameters
3.2
Die Model
3.0
2.8
CPad
CPad
Ccb (pF)
C
CPad
B
2.6
2.4
2.2
2.0
Die Area = 0.67
CPad = 0.36 pF
Label
BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
Value
280
299.9
9.9E-11
2.399
33.16
0.9935
1.6E-11
0.006656
0.02785
0.001
23
0
54.61
81
8.7E-13
1.587
1.511
1.8
E1
0
E2
2
3
4
5
6
7
8
B
L = La
C = Ca
C
L = Lb
R = Rb
L = La
C = Cb
C = Cb
E1
L = La
C = Ca
Label Value
0.1 Ω
Ra
0.2 Ω
Rb
0.85 nH
La
0.25 nH
Lb
0.01 pF
Ca
0.01 pF
Cb
R = Ra
C = Ca
C
B
R = Ra
10
Figure 7. Collector-Base Capacitance
vs. Collector-Base Voltage (DC Test).
Packaged Model
R = Ra
9
Vcb (V)
Value
0.9886
1E-9
1.11
3.598E-15
3
1.02 pF
0.4276
0.2508
0.001
0.999
0.98 pF
0.811
0.596
5.435
1.30
0.01
Label
NR
TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
RE
RC
1
E2
L = Lb
R = Rb
L = Lb
R = Rb
C = Cb
L = La
C = Cb
E
R = Ra
C = Ca
7
AT-38043 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, VCE = 1.2 V, IC = 50 mA, TC = +25°C
Freq.
S11
S21
S12
GHz
Mag
Ang
dB
Mag
Ang
dB
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
3.25
3.50
3.75
4.00
4.25
4.50
4.75
5.00
0.74
0.79
0.83
0.84
0.84
0.84
0.83
0.84
0.84
0.84
0.84
0.85
0.85
0.85
0.86
0.86
0.87
0.87
0.88
0.89
0.89
0.90
0.90
-84
-122
-157
-174
178
175
173
169
165
161
157
152
148
144
141
138
136
134
133
131
129
128
127
29.4
26.2
19.5
13.7
10.1
8.6
7.7
5.9
4.2
2.9
1.9
0.7
-0.3
-1.1
-2.0
-2.9
-3.6
-4.3
-5.0
-5.8
-6.5
-7.0
-7.6
29.45
20.32
9.41
4.82
3.21
2.70
2.43
1.97
1.63
1.40
1.24
1.09
0.97
0.88
0.80
0.72
0.66
0.61
0.56
0.51
0.48
0.45
0.42
147
132
129
146
168
-178
-169
-145
-122
-97
-73
-49
-24
1
26
52
78
105
131
158
-175
-147
-121
-28.9
-26.2
-24.9
-24.5
-24.2
-23.9
-23.8
-23.2
-22.8
-22.4
-21.8
-21.5
-21.1
-20.6
-20.3
-20.0
-19.6
-19.2
-19.0
-18.9
-18.7
-18.4
-18.2
Mag
0.036
0.049
0.057
0.060
0.061
0.064
0.065
0.069
0.072
0.076
0.081
0.084
0.088
0.093
0.097
0.100
0.105
0.109
0.112
0.114
0.116
0.121
0.124
S22
Ang
Mag
Ang
58
47
50
78
110
130
144
176
-152
-120
-89
-58
-27
4
34
64
94
124
153
-178
-147
-118
-89
0.79
0.64
0.52
0.51
0.52
0.50
0.51
0.49
0.51
0.52
0.51
0.54
0.56
0.55
0.55
0.57
0.57
0.57
0.59
0.62
0.64
0.65
0.67
-48
-73
-80
-42
12
45
70
125
-180
-120
-63
-7
55
113
168
-135
-76
-19
37
95
155
-147
-92
AT-38043 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, VCE = 3.0 V, IC = 50 mA, TC = +25°C
Freq.
S11
S21
S12
GHz
Mag
Ang
dB
Mag
Ang
dB
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
3.25
3.50
3.75
4.00
4.25
4.50
4.75
5.00
0.75
0.78
0.81
0.82
0.82
0.82
0.82
0.82
0.83
0.83
0.83
0.84
0.84
0.84
0.85
0.85
0.86
0.86
0.87
0.88
0.89
0.90
0.90
-66
-106
-149
-169
-179
178
176
171
167
163
159
154
150
146
142
139
137
135
134
132
130
129
128
30.5
28.0
21.8
16.1
12.6
11.1
10.2
8.3
6.7
5.3
4.2
3.1
2.1
1.2
0.3
-0.6
-1.4
-2.2
-2.9
-3.7
-4.5
-5.0
-5.7
33.53
25.02
12.34
6.40
4.27
3.59
3.22
2.61
2.16
1.85
1.63
1.43
1.27
1.15
1.03
0.93
0.85
0.78
0.71
0.65
0.60
0.56
0.52
154
140
133
148
170
-177
-167
-144
-120
-96
-72
-48
-23
2
27
52
78
105
131
157
-176
-149
-122
-31.2
-27.7
-25.8
-25.3
-25.0
-24.8
-24.6
-24.1
-23.7
-23.2
-22.6
-22.2
-21.8
-21.3
-20.9
-20.6
-20.2
-19.7
-19.4
-19.2
-19.0
-18.7
-18.4
Mag
0.028
0.041
0.051
0.054
0.056
0.058
0.059
0.062
0.065
0.069
0.074
0.077
0.081
0.086
0.090
0.094
0.098
0.103
0.107
0.109
0.112
0.117
0.120
S22
Ang
Mag
Ang
65
53
54
80
112
132
145
178
-150
-117
-85
-55
-23
8
38
69
99
129
158
-173
-143
-113
-84
0.84
0.67
0.47
0.42
0.42
0.41
0.41
0.40
0.41
0.43
0.43
0.46
0.48
0.47
0.48
0.50
0.51
0.51
0.53
0.57
0.60
0.61
0.62
-33
-52
-62
-29
22
55
80
135
-171
-111
-53
2
64
123
177
-126
-67
-9
46
103
163
-140
-85
8
AT-38043 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, VCE = 3.6 V, IC = 50 mA, TC = +25°C
Freq.
S11
S21
S12
GHz
Mag
Ang
dB
Mag
Ang
dB
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
3.25
3.50
3.75
4.00
4.25
4.50
4.75
5.00
0.75
0.78
0.81
0.82
0.82
0.82
0.82
0.82
0.83
0.83
0.83
0.83
0.84
0.84
0.84
0.85
0.85
0.86
0.87
0.88
0.89
0.90
0.90
-65
-104
-148
-169
-178
178
176
171
167
163
159
154
150
146
142
140
137
135
134
132
130
129
128
30.6
28.1
22.0
16.4
12.8
11.3
10.4
8.5
6.9
5.5
4.4
3.3
2.3
1.4
0.5
-0.4
-1.2
-2.0
-2.7
-3.5
-4.3
-4.8
-5.5
33.94
25.49
12.64
6.57
4.38
3.68
3.30
2.67
2.21
1.89
1.67
1.46
1.30
1.18
1.06
0.95
0.87
0.80
0.73
0.67
0.61
0.57
0.53
154
140
133
148
170
-177
-167
-144
-120
-95
-71
-48
-23
2
27
52
78
105
131
157
-176
-149
-122
-31.3
-27.8
-25.9
-25.4
-25.1
-24.8
-24.7
-24.2
-23.8
-23.3
-22.7
-22.3
-21.9
-21.4
-21.0
-20.6
-20.2
-19.8
-19.5
-19.3
-19.0
-18.7
-18.4
Mag
0.027
0.041
0.050
0.054
0.055
0.057
0.058
0.062
0.065
0.068
0.073
0.077
0.081
0.085
0.090
0.093
0.098
0.102
0.106
0.109
0.112
0.116
0.120
S22
Ang
Mag
Ang
65
54
54
80
112
132
145
178
-150
-117
-85
-54
-23
8
39
69
99
129
158
-172
-142
-113
-84
0.84
0.67
0.46
0.41
0.41
0.40
0.41
0.39
0.40
0.42
0.42
0.45
0.47
0.47
0.47
0.49
0.50
0.50
0.53
0.57
0.59
0.60
0.62
-32
-50
-60
-28
23
56
81
136
-170
-110
-52
2
65
124
178
-125
-66
-8
47
104
164
-139
-84
AT-38043 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, VCE = 4.8 V, IC = 50 mA, TC = +25°C
Freq.
S11
S21
S12
GHz
Mag
Ang
dB
Mag
Ang
dB
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
3.25
3.50
3.75
4.00
4.25
4.50
4.75
5.00
0.77
0.79
0.81
0.81
0.81
0.81
0.81
0.82
0.82
0.82
0.83
0.83
0.83
0.84
0.84
0.85
0.85
0.86
0.87
0.88
0.89
0.89
0.90
-63
-102
-147
-168
-178
179
176
172
167
163
159
155
150
146
143
140
138
136
134
132
130
129
128
30.8
28.3
22.3
16.6
13.1
11.6
10.6
8.8
7.2
5.8
4.7
3.6
2.5
1.7
0.7
-0.2
-1.0
-1.7
-2.5
-3.3
-4.0
-4.6
-5.3
34.50
26.10
13.02
6.78
4.52
3.79
3.41
2.75
2.28
1.95
1.72
1.51
1.34
1.21
1.09
0.98
0.89
0.82
0.75
0.68
0.63
0.59
0.54
155
141
133
148
170
-176
-167
-143
-120
-95
-71
-47
-22
3
27
53
79
105
131
157
-176
-149
-122
-31.6
-28.0
-26.0
-25.5
-25.2
-24.9
-24.8
-24.3
-23.8
-23.4
-22.8
-22.4
-21.9
-21.4
-21.0
-20.7
-20.3
-19.8
-19.5
-19.3
-19.1
-18.7
-18.5
Mag
0.026
0.040
0.050
0.053
0.055
0.057
0.058
0.061
0.064
0.068
0.073
0.076
0.080
0.085
0.089
0.093
0.097
0.102
0.106
0.108
0.111
0.116
0.119
S22
Ang
Mag
Ang
66
55
54
80
112
132
146
178
-149
-117
-85
-54
-22
9
39
69
100
130
159
-172
-142
-112
-83
0.84
0.68
0.46
0.40
0.40
0.39
0.40
0.38
0.39
0.41
0.41
0.44
0.47
0.46
0.46
0.48
0.49
0.50
0.52
0.56
0.58
0.60
0.61
-31
-49
-58
-27
24
57
82
137
-169
-109
-51
3
66
125
179
-124
-65
-7
48
105
165
-138
-83
9
AT-38043 Typical Scattering Parameters,
Common Emitter, ZO = 50 Ω, VCE = 6.0 V, IC = 50 mA, TC = +25°C
Freq.
S11
S21
S12
GHz
Mag
Ang
dB
Mag
Ang
dB
0.05
0.10
0.25
0.50
0.75
0.90
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
3.00
3.25
3.50
3.75
4.00
4.25
4.50
4.75
5.00
0.78
0.80
0.81
0.81
0.81
0.81
0.81
0.82
0.82
0.82
0.83
0.83
0.83
0.84
0.84
0.85
0.85
0.86
0.87
0.88
0.89
0.89
0.90
-62
-101
-146
-168
177
179
177
172
167
163
159
155
150
146
143
140
138
136
134
132
130
129
128
30.8
28.5
22.4
16.8
13.3
11.7
10.8
8.9
7.3
6.0
4.8
3.7
2.7
1.8
0.9
0
-0.8
-1.6
-2.3
-3.2
-3.9
-4.5
-5.2
34.85
26.47
13.26
6.90
4.60
3.86
3.47
2.80
2.32
1.99
1.75
1.53
1.36
1.23
1.11
1.00
0.91
0.83
0.76
0.70
0.64
0.60
0.55
155
141
134
149
170
-176
-167
-143
-120
-95
-71
-47
-22
3
27
53
79
105
131
157
-176
-149
-123
-31.7
-28.1
-26.1
-25.6
-25.3
-25.0
-24.8
-24.3
-23.9
-23.4
-22.8
-22.4
-22.0
-21.5
-21.1
-20.7
-20.3
-19.9
-19.6
-19.4
-19.1
-18.8
-18.5
Mag
0.026
0.039
0.05
0.053
0.055
0.056
0.057
0.061
0.064
0.067
0.072
0.076
0.08
0.084
0.088
0.092
0.097
0.101
0.105
0.108
0.111
0.115
0.119
S22
Ang
Mag
Ang
66
55
55
81
112
132
146
178
-149
-116
-85
-54
-22
9
39
70
100
130
159
-172
-141
-112
-83
0.84
0.68
0.45
0.39
0.40
0.38
0.39
0.37
0.39
0.40
0.40
0.43
0.46
0.45
0.45
0.48
0.49
0.49
0.52
0.55
0.58
0.59
0.61
-30
-48
-57
-26
25
57
83
138
-168
-108
-50
4
66
125
180
-123
-64
-6
48
106
165
-137
-83
10
AT-38043 Typical Performance, TC = 25°C
30
35
35
25
30
30
20
15
10
5
MAG
|S21|2
25
MSG
15
MAG
10
5
|S21|2
5
0
-5
-5
-5
3.00
4.00
-10
0.05 0.25 0.75 1.00
5.00
4.00
5.00
35
35
30
30
25
25
MSG
Gain (dB)
20
15
MAG
10
|S21|2
15
5
0
0
-5
-5
-10
0.05 0.25 0.75 1.00
2.00
3.00
4.00
5.00
FREQUENCY (GHz)
Figure 11. Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency
VCE = 4.8 V, IC = 50 mA.
MSG
MAG
10
|S21|2
-10
0.05 0.25 0.75 1.00
2.00
3.00
|S21|2
-10
0.05 0.25 0.75 1.00
2.00
3.00
4.00
5.00
FREQUENCY (GHz)
Figure 9. Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency
VCE = 3.0 V, IC = 50 mA.
Figure 8. Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency
VCE = 1.2 V, IC = 50 mA.
5
3.00
FREQUENCY (GHz)
FREQUENCY (GHz)
20
2.00
MAG
10
0
2.00
MSG
15
0
-10
0.05 0.25 0.75 1.00
Gain (dB)
20
Gain (dB)
MSG
Gain (dB)
Gain (dB)
20
25
4.00
5.00
FREQUENCY (GHz)
Figure 12. Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency
VCE = 6.0 V, IC = 50 mA.
Figure 10. Insertion Power Gain,
Maximum Available Gain, and
Maximum Stable Gain vs. Frequency
VCE = 3.6 V, IC = 50 mA.
11
Test Circuit A: Test Circuit Board Layout @ 900 MHz
VBB
VBB
VCC
C3
VCC
C5
R2
C6 C7
R1
4/97
T1
C8
C2
38.1 (1.5)
C9
C4
C1
INPUT
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
T1
100.0 pF
100.0 pF
100.0 nF
10.0 pF
100.0 nF
1.5 µF
10.0 µF
100.0 pF
3.6 pF
100.0 pF
10.0 Ω
620.0 Ω
MBT 2222A
C10
B–MFG0142
REV A
PA4 DEMO
OUTPUT
76.2 (3.0)
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
CW Test
VCE = 4.8 V
ICQ = 15 mA
Freq. = 900 MHz
NOTE:
Dimensions are shown in millimeters (inches).
Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz
CW Test
VCE = 4.8 V
ICQ = 15 mA
Freq. = 900 MHz
VBB
10 Ω
620 Ω
B DC
C E Transistor
VCC
100 nF
100 pF
100 pF
80 Ω
λ/4 @ 900 MHz
100 nF
100 pF
λ/4 @ 900 MHz
100 pF
RF OUT
50 Ω
= 27.74 (1.092)
10 pF
= 5.89 (.232)
10 µF
80 Ω
50 Ω
RF IN
1.5 µF
3.6 pF
12
Test Circuit B: Test Circuit Board Layout @ 1900 MHz
VBB
VBB
VCC
C2
VCC
C7
R2
C8 C9
R1
4/97
T1
38.1 (1.5)
C6
C3
C5
C4
C1
INPUT
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
T1
100.0 pF
100.0 nF
100.0 pF
3.6 pF
1.8 pF
100 pF
100 nF
1.5 µF
10 µF
100.0 pF
10.0 Ω
620.0 Ω
MBT 2222A
C10
B–MFG0142
REV A
PA4 DEMO
OUTPUT
76.2 (3.0)
Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)
CW Test
VCE = 3.0 V
ICQ = 15 mA
Freq. = 1900 MHz
NOTE:
Dimensions are shown in millimeters (inches).
Test Circuit B: Test Circuit Schematic Diagram @ 1900 MHz
CW Test
VCE = 3.0 V
ICQ = 15 mA
Freq. = 1900 MHz
VBB
10 Ω
620 Ω
B DC
C E Transistor
VCC
100 nF
100 pF
100 pF
80 Ω
λ/4 @ 1900 MHz
100 nF
λ/4 @ 1900 MHz
100 pF
RF OUT
50 Ω
= 0.299 (7.590)
RF IN
3.6 pF
= 0.020 (0.510)
10 µF
80 Ω
50 Ω
100 pF
1.5 µF
1.8 pF
13
Part Number Ordering Information
Part Number
Devices per Reel
Container
AT-38043-TR1
3000
7" Reel
AT-38043-TR2
AT-38043-BLK
10,000
100
13" Reel
Tape
Package Dimensions
SOT-343 (SC-70) Plastic Package
1.30 (0.051)
BSC
1.30 (.051) REF
2.60 (.102)
E
1.30 (.051)
E1
0.85 (.033)
0.55 (.021) TYP
1.15 (.045) BSC
e
1.15 (.045) REF
D
h
A
b TYP
A1
L
θ
DIMENSIONS
SYMBOL
A
A1
b
C
D
E
e
h
E1
L
θ
MAX.
MIN.
1.00 (0.039)
0.80 (0.031)
0.10 (0.004)
0 (0)
0.35 (0.014)
0.25 (0.010)
0.20 (0.008)
0.10 (0.004)
2.10 (0.083)
1.90 (0.075)
2.20 (0.087)
2.00 (0.079)
0.65 (0.025)
0.55 (0.022)
0.450 TYP (0.018)
1.35 (0.053)
1.15 (0.045)
0.35 (0.014)
0.10 (0.004)
10
0
DIMENSIONS ARE IN MILLIMETERS (INCHES)
C TYP
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
8 mm
CARRIER
TAPE
38
38
38
38
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions
For Outline 4T
P
P2
D
P0
E
F
W
D1
t1 (CARRIER TAPE THICKNESS)
K0
8° MAX.
A0
DESCRIPTION
5° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
For technical assistance or the location of
your nearest Hewlett-Packard sales office,
distributor or representative call:
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.010 ± 0.0005
Europe: Call your local HP sales office.
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
Data subject to change.
Copyright © 1997 Hewlett-Packard Co.
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
CAVITY
Americas/Canada: 1-800-235-0312 or
408-654-8675
Far East/Australasia: Call your local HP
sales office.
Japan: (81 3) 3335-8152
Printed in U.S.A.
5966-1275E (11/97)