PHILIPS BLF861

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D392
BLF861
UHF power LDMOS transistor
Preliminary specification
1999 Aug 26
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
PINNING - SOT540A
FEATURES
• High power gain
PIN
DESCRIPTION
• Easy power control
1
drain 1
• Excellent ruggedness
2
drain 2
• Source on underside eliminates DC isolators, reducing
common mode inductance
3
gate 1
• Designed for broadband operation (UHF band).
4
gate 2
5
source, connected to flange
APPLICATIONS
1
• Communication transmitter applications in the UHF
frequency range.
2
5
DESCRIPTION
3
Silicon N-channel enhancement mode lateral D-MOS
push-pull transistor in an SOT540A package with ceramic
cap. The common source is connected to the mounting
flange.
4
Top view
MBK777
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
∆Gp
(dB)
860
32
150
>14
>50
≤1
860
(ch 69)
32
typ.170
(peak sync)
>14
>40
note 1
MODE OF OPERATION
CW, class-AB
PAL BG (TV), class-AB
Notes
1. Sync compression: input sync: ≥33%; output sync: 27 %
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±15
V
ID
drain current (DC)
−
18
A
Ptot
total power dissipation
−
318
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tmb ≤ 25 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Aug 26
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to mounting base
Rth mb-h
thermal resistance from mounting base to heatsink
VALUE
Tmb = 25 °C; Ptot = 318 W
UNIT
0.55
K/W
0.2
K/W
CHARACTERISTICS
Tj = 25 °C; per section; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 1.5 mA
65
−
−
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 150 mA
4
−
5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 32 V
−
−
10
µA
IDSX
drain cut-off current
VGS = VGSth + 9 V; VDS = 10 V
18
−
−
A
IGSS
gate leakage current
VGS = ±15 V; VDS = 0
−
−
100
nA
gfs
forward transconductance
VDS = 10 V; ID = 4 A
−
4
−
S
RDSon
drain-source on-state resistance
VGS = VGSth + 9 V; ID = 4 A
−
160
−
mΩ
Cis
input capacitance
VGS = 0; VDS = 32 V; f = 1 MHz
−
84
−
pF
Cos
output capacitance
VGS = 0; VDS = 32 V; f = 1 MHz
−
42
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 32 V; f = 1 MHz
−
6
−
pF
200
COS
(pF)
160
120
80
40
0
0
10
20
30
40
50
VDS (V)
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.2
Output capacitance as a function of drainsource voltage; typical values per section.
1999 Aug 26
3
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T h = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specified.
MODE OF
OPERATION
f
(MHz)
VDS
(V)
IDQ
(A)
PL
(W)
Gp
(dB)
ηD
(%)
dIM
(dBc)
∆Gp
(dB)
860
32
1.15
150
>14
>50
−
≤1
f1 = 860
f1 = 860.1
32
1.15
150 (PEP)
>14
>40
≤−30
−
860
(ch 69)
32
1.15
typ.170
(peak sync)
>14
>40
−
note 1
CW, class-AB
2-tone, class-AB
PAL BG (TV), class-AB
Notes
1. Sync compression: input sync: ≥33%; output sync: 27 %
measured in narrowband testcircuit.
Ruggedness in class-AB operation
The BLF861 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 32 V; f = 860 MHz at rated load power.
12
Zi
(Ω)
10
ZL
(Ω) 8
RL
xi
6
8
4
2
ri
0
4
XL
-2
-4
0
400
500
600
700
-6
400
800
900
f (MHz)
500
600
700
800
900
f (MHz)
CW, class-AB operation; VDS = 32 V; I DQ = 1.15 A;
PL = 170 W (total device) ; Th = 25 °C.
CW, class-AB operation; V DS = 32 V; I DQ = 1.15 A;
PL = 170 W (total device) ; Th = 25 °C.
Fig.3
Fig.4
Input impedance as a function of frequency
(series components); typical values per
section.
1999 Aug 26
4
Load impedance as a function of frequency
(series components); typical values per
section.
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
16
GP
(dB)
BLF861
0
80
ηD
(%)
GP
dim
(dB)
60
-20
8
40
-40
4
20
-60
12
d3
ηD
-80
0
200
300
PL (PEP) (W)
0
0
d5
100
0
100
200
300
PL (PEP) (W)
Th = 25 °C; VDS = 32V; I DQ = 1.15 A;
2-tone: f 1 = 860 MHz (−6 dB); f2 = 860.1 MHz (−6 dB)
measured in 860 MHz testcircuit.
T h = 25 °C; VDS = 32 V; I DQ = 1.15 A;
2-tone: f 1 = 860 MHz (−6 dB); f2 = 860.1 MHz (−6 dB)
measured in 860 MHz testcircuit.
Fig.5
Fig.6
Power gain and drain efficiency as functions
of peak envelope load power; typical values.
16
GP
(dB)
GP
80
ηD
(%)
60
12
ηD
8
40
4
20
0
0
50
100
150
0
200
PL (W)
Th = 25 °C; VDS = 32 V; ; IDQ = 1.15 A; CW, class-AB; f = 860 MHz;
measured in 860 MHz testcircuit.
Fig.7
Power gain and drain efficiency as functions
of load power; typical values.
1999 Aug 26
5
Intermodulation distortion as a function of
peak envelope output power; typical values.
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
+Vs
R2
C26
C25
+Vbias
C19
C18
4.5mm
4mm
R3
L7
L1
C16
50 Ohm
Input
10mm
R5
C1
L18
L9
R4
L11
L5
C24
L13
L15
L3
C2
B1
C3
C4
C5
C6
C7
R1
L19
C9
C8
C14
C11
C12
C13
L6
C17
L14
L8
L2
C20
C21
L17
B2
C15
50 Ohm
Output
C10
L4
R6
R7
8mm
L16 C22
C23
L12
T1
L10
Fig.8 Class-AB broadband testcircuit.
List of components
COMPONENT
DESCRIPTION
VALUE
C1
multilayer ceramic chip capacitor; note 1 20 pF
C2
multilayer ceramic chip capacitor; note 1 4.3 pF
C3, C6, C9
Tekelec trimmer
C4
multilayer ceramic chip capacitor; note 1 8.2 pF
C5
multilayer ceramic chip capacitor; note 1 10 pF
C7
multilayer ceramic chip capacitor; note 1 6.8 pF
C8
multilayer ceramic chip capacitor; note 1 13 pF
0.6 to 4.5 pF
C10, C11
multilayer ceramic chip capacitor; note 2 8.2 pF
C12
multilayer ceramic chip capacitor; note 2 3.3 pF
C13
multilayer ceramic chip capacitor; note 2 6.8 pF
C14
multilayer ceramic chip capacitor; note 2 1 pF
C15
multilayer ceramic chip capacitor; note 2 30 pF
C16, C17
multilayer ceramic chip capacitor
1 nF
C18, C25
multilayer ceramic chip capacitor
100 nF
C19, C26
multilayer ceramic chip capacitor
100 µF
C20, C21, C22,
C23
multilayer ceramic chip capacitor; note 3 100 pF
1999 Aug 26
6
DIMENSIONS
CATALOGUE
No.
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
COMPONENT
C24
BLF861
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE
No.
1000 µF
electrolytic capacitor
L1, L2
stripline; note 4
30.6 x 2.4 mm
L3, L4
stripline; note 4
28 x 2.4 mm
L5, L6
stripline; note 4
10 x 5 mm
L7, L8
stripline; note 4
20 x 10 mm
L9, L10
stripline; note 4
5.5 x 15 mm
L11, L12
stripline; note 4
10 x 10 mm
L13, L14
stripline; note 4
15 x 5 mm
L15, L16
stripline; note 4
48.5 x 2.4 mm
L17
stripline; note 4
10 x 2.4 mm
L18
ferrite
L19
wire inductor (hairpin)
B1
semi rigid coax balun UT70-25
Z = 25 Ω ±1.5 Ω 70 mm
B2
semi rigid coax balun UT70-25
Z = 25 Ω ±1.5 Ω 48.5 mm
R1, R7
resistor
10 Ω
R2
resistor
1 kΩ
R3
resistor
100 kΩ
R4
resistor
100 Ω
R5, R6
SMD resistor
3.9 Ω
height = 8 mm
length = 20 mm
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 180R or capacitor of same quality.
3. American Technical Ceramics type 100B or capacitor of same quality.
4. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr = 2.2); thickness 0.79 mm.
1999 Aug 26
7
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
80 mm
95 mm
95 mm
+Vbias
+Vs
C26
C25
C19
C18
R2
R3
L18
R7
R4
B2
B1
R5
C2
C3
C1
C17
R6
C4
C5
C6
C8
C7
R1
C9
C10
C11
BLF861
C16
C12
C13
C20
C21
C22
C23
C14
L19
C15
C24
Dimensions in mm.
The components are situated on one side of the Rogers 5880 printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.9 Printed-circuit board and component layout for the class-AB broadband testcircuit.
1999 Aug 26
8
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
16
GP
(dB)
BLF861
250
Po sync
(W)
80
ηD
(%)
GP
200
60
12
150
ηD
40
8
100
20
4
50
0
400
500
600
700
0
400
0
800
900
f (MHz)
500
600
700
800
900
f (MHz)
Th = 25 °C; VCE = 32V; I DQ = 1.15A; PAL BG signal (TV);
Sync compression: input 33 %, output 27 %;
measured in broadband testcircuit.
T h = 25 °C; VCE = 32V; I DQ = 1.15A; PAL BG signal (TV);
Sync compression: input 33 %, output 27 %;
measured in broadband testcircuit.
Fig.10 Power gain and drain efficiency as functions
of frequency; typical values.
Fig.11 Peak envelope sync power as a function of
frequency; typical values.
16
GP
(dB)
GP
80
ηD
(%)
60
12
ηD
8
40
4
20
0
400
500
600
700
0
800
900
f (MHz)
Th = 25 °C; VDS= 32V; IDQ = 1.15 A; CW class-AB; PL = 150 W
measured in broadband testcircuit.
Fig.12 Power gain and drain efficiency as functions
of frequency; typical values.
1999 Aug 26
9
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
PACKAGE OUTLINE
Flanged balanced LDMOST package; 2 mounting holes; 4 leads
SOT540A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
H
c
2
E1
p
U2
5
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
5.77
5.00
8.51
8.26
0.15
0.10
inches
D
D1
e
E
E1
10.26 10.31
22.05 22.05
10.21
10.06 10.01
21.64 21.64
F
H
1.78
1.52
H1
15.75 18.72
14.73 18.47
p
Q
q
U1
U2
w1
w2
w3
3.38
3.12
2.72
2.46
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.25
0.227 0.335 0.006 0.868 0.868
0.404 0.406 0.070 0.620 0.737 0.133 0.107
1.345 0.390
1.100
0.010 0.020 0.010
0.402
0.197 0.325 0.004 0.852 0.852
0.396 0.394 0.060 0.580 0.727 0.123 0.097
1.335 0.380
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-03-30
99-08-27
SOT540A
1999 Aug 26
EUROPEAN
PROJECTION
10
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF861
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 26
11
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SCA 67
© Philips Electronics N.V. 1999
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Printed in The Netherlands
budgetnum/printrun/ed/pp12
Date of release: 1999
Aug 26
Document order number:
9397 750 06336