Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design. The pin-out is convenient for cascode amplifier designs. The SOT-363 package is an industry standard plastic surface mount package. • 900 MHz Performance: 1.1 dB NF, 14.5 dB GA • Characterized for End-ofLife Battery Use (2.7 V) • SOT-363 (SC-70) Plastic Package • Tape-and-Reel Packaging Option Available [1] I I Surface Mount Package SOT-363 (SC-70) Pin Connections and Package Marking 1 6 2 5 3 4 C1 B1 E1 C2 E2 B2 The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields a transistor that is easy to match to and extremely fast, with moderate power, low noise resistance, and low operating currents. Optimized performance at 2.7 V makes this device ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 12 dB or more associated gain at a 2.7 V, 5 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes this device a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts. The AT-3 series bipolar transistors are fabricated using an optimized version of Agilent’s 10 GHz ft , 30 GHz fmax Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metallization in the fabrication of these devices. 2 AT-32063 Absolute Maximum Ratings[1] Symbol Parameter VEBO VCBO VCEO IC PT Tj TSTG Units Absolute Maximum V V V mA mW °C °C 1.5 11 5.5 32 150 150 -65 to 150 Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Thermal Resistance[2]: θjc = 370°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface = 25°C. 3. Derate at 2.7 mW/°C for TC > 94.5°C. 4. 150 mW per device. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions Units Min. Typ. Max. 1.1 1.4[2] NF Noise Figure; VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dB GA Associated Gain; VCE = 2.7 V, IC = 5 mA f = 0.9 GHz dB hFE Forward Current Transfer Ratio; VCE = 2.7 V, IC = 5 mA — ICBO Collector Cutoff Current; VCB = 3 V µA 0.2 IEBO Noise Figure; VEB = 1 V µA 1.5 [2] 12.5[2] 14.5[2] 50 Notes: 1. All data is per individual transistor. 2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB; output loss = 0.3 dB. 50 Ω 50 Ω W = 10 L = 450 TEST CIRCUIT BOARD MATERIAL = 0.047 GETEK (ε = 4.3) W = 20 L = 60 W = 10 L = 100 DIMENSIONS IN MILS NOT TO SCALE Figure 1. Test circuit for Noise Figure and Associated Gain. This circuit is a compromise match between best noise figure, best gain, stability, and a practical synthesizable match. 270 3 AT-32063 Characterization Information, TA = 25°C Symbol Parameters and Test Conditions Units Typ. P1 dB Power at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 12 G1 dB Gain at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dB 16 IP3 Output Third Order Intercept Point (opt tuning); VCE = 2.7 V, IC = 20 mA f = 0.9 GHz dBm 24 20.0 1.50 15.0 1.00 14 10.0 0.50 13 12 5.0 2.7V/2 mA 2.7V/5 mA 2.7V/20 mA 0 0.9 11 2.7V/2 mA 2.7V/5 mA 2.7V/20 mA 1.8 0 0.9 2.4 1.8 2.4 FREQUENCY (GHz) FREQUENCY (GHz) Figure 2. Minimum Noise Figure vs. Frequency and Current at VCE = 2.7 V. Figure 3. Associated Gain at Optimum Noise Match vs. Frequency and Current at VCE = 2.7 V. 18 20 IP3 (dBm) 12 9 6 0 0.9 15 10 2 mA 5 mA 10 mA 20 mA 5 3 0 1.8 2.4 FREQUENCY (GHz) Figure 5. 1 dB Compressed Gain vs. Frequency at VCE = 2.7 V and IC = 20 mA. 0 0.5 1.0 1.5 2.0 10 0.9 1.8 FREQUENCY (GHz) 25 15 G1 dB (dBm) 15 P1 dB (dBm) 2.00 Ga (dB) NOISE FIGURE (dB) Typical Performance, TA = 25°C 2.5 FREQUENCY (GHz) Figure 6. Third Order Intercept vs. Frequency and Bias at VCE = 2.7 V, with Optimal Tuning. Figure 4. Power at 1 dB Gain Compression vs. Frequency at VCE = 2.7 V and IC = 20 mA. 2.4 4 AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 1 V, IC = 1 mA Freq. S11 S21 S12 S22 GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.98 0.86 0.72 0.69 0.58 0.52 0.49 0.45 0.41 0.42 0.47 -11 -50 -82 -88 -119 -134 -145 -165 166 124 93 11.36 10.14 8.39 7.87 5.87 4.83 4.3 3.16 1.84 0.17 -1.15 3.7 3.21 2.63 2.48 1.97 1.74 1.64 1.44 1.24 1.02 0.88 171 138 113 108 85 74 67 55 39 16 -2 -34.77 -22.02 -18.97 -18.61 -17.8 -17.72 -17.69 -17.68 -16.99 -13.67 -9.84 0.02 0.08 0.11 0.12 0.13 0.13 0.13 0.13 0.14 0.21 0.32 83 59 43 41 31 28 28 30 37 45 38 0.99 0.91 0.82 0.8 0.73 0.7 0.68 0.67 0.64 0.6 0.54 -4 -20 -31 -32 -41 -45 -48 -54 -63 -81 -107 25 20 AT-32063 Typical Noise Parameters MSG Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn — 0.9 1.8 2.4 0.71 1.37 1.80 10.4 8.3 7.2 0.76 0.60 0.50 50 112 155 0.44 0.24 0.10 GAIN (dB) Common Emitter, Zo = 50 Ω, VCE = 1 V, IC = 1 mA 15 10 MAG MSG 5 S21 0 -5 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 7. Gain vs. Frequency at VCE = 1 V, IC = 1 mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 2 mA Freq. S11 S21 S12 GHz Mag Ang dB Mag Ang dB 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.96 0.77 0.59 0.55 0.42 0.37 0.34 0.29 0.26 0.28 0.33 -12 -55 -87 -93 -121 -135 -145 -164 167 124 94 16.46 14.73 12.37 11.74 9.26 8.01 7.35 6.05 4.54 2.73 1.36 6.66 5.45 4.15 3.86 2.90 2.52 2.33 2.01 1.69 1.37 1.17 169 132 107 103 83 73 67 56 41 20 1 -37.32 -25.13 -22.42 -22.07 -20.79 -20.13 -19.67 -18.68 -16.95 -13.75 -10.70 S22 Mag 0.014 0.055 0.076 0.079 0.091 0.099 0.104 0.116 0.142 0.205 0.292 Ang Mag Ang 82 59 48 47 44 45 46 48 50 48 41 0.98 0.87 0.76 0.74 0.69 0.67 0.66 0.65 0.64 0.61 0.57 -5 -21 -29 -30 -36 -39 -41 -46 -53 -68 -89 30 AT-32063 Typical Noise Parameters Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn — 0.9 1.8 2.4 0.78 1.25 1.57 14.3 10.7 9.1 0.65 0.45 0.35 50 105 145 0.31 0.20 0.13 GAIN (dB) 25 20 MSG 15 MAG 10 MSG S21 5 0 0.1 1.1 2.1 3.1 4.1 FREQUENCY (GHz) Figure 8. Gain vs. Frequency at VCE = 2.7 V, IC = 2 mA. 5.1 5 AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 5 mA Freq. S11 S21 GHz Mag Ang dB 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.87 0.52 0.34 0.31 0.22 0.19 0.17 0.14 0.12 0.16 0.22 -19 -72 -101 -106 -129 -141 -150 -169 160 117 93 23.36 19.21 15.40 14.60 11.54 10.12 9.33 7.95 6.34 4.46 3.15 S12 Mag Ang dB 14.72 9.13 5.89 5.37 3.77 3.21 2.93 2.50 2.08 1.67 1.44 162 116 94 90 74 66 61 52 39 20 2 -37.77 -27.03 -24.01 -23.41 -20.85 -19.52 -18.72 -17.22 -15.25 -12.40 -10.03 S22 Mag Ang Mag Ang 80 60 58 58 58 58 57 56 52 44 33 0.96 0.72 0.62 0.61 0.58 0.57 0.57 0.57 0.56 0.53 0.48 -9 -25 -28 -29 -33 -36 -38 -42 -49 -63 -82 0.013 0.045 0.063 0.067 0.091 0.106 0.116 0.138 0.173 0.240 0.315 35 30 AT-32063 Typical Noise Parameters 25 Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn — 0.9 1.8 2.4 0.98 1.50 1.77 16.4 11.6 10.1 0.45 0.29 0.33 51 100 153 0.23 0.16 0.11 GAIN (dB) Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 5 mA MSG 20 15 MAG 10 MSG S21 5 0 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 9. Gain vs. Frequency at VCE = 2.7 V, IC = 5 mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 20 mA Freq. S11 S21 GHz Mag Ang dB 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.55 0.20 0.13 0.13 0.10 0.09 0.09 0.08 0.10 0.15 0.21 -41 -107 -137 -141 -164 -178 172 152 127 101 86 30.48 21.24 16.48 15.60 12.26 10.78 9.93 8.52 6.85 4.92 3.59 S12 Mag Ang dB 33.40 11.53 6.66 6.02 4.10 3.46 3.14 2.67 2.20 1.76 1.51 143 97 82 79 67 60 56 48 36 18 0 -39.81 -29.18 -24.63 -23.79 -20.43 -18.88 -17.98 -16.39 -14.4 -11.68 -9.52 S22 Mag Ang Mag Ang 74 72 72 71 68 66 64 60 54 43 31 0.83 0.56 0.53 0.53 0.52 0.53 0.53 0.53 0.52 0.48 0.44 -15 -20 -22 -22 -27 -31 -34 -39 -47 -61 -79 0.010 0.035 0.059 0.065 0.095 0.114 0.126 0.151 0.191 0.261 0.334 40 35 30 Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 20 mA 25 Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn — 0.9 1.8 2.4 1.51 1.78 1.96 17.9 12.7 10.6 0.13 0.20 0.28 88 178 235 0.20 0.13 0.08 GAIN (dB) AT-32063 Typical Noise Parameters MSG 20 MAG 15 MSG 10 S21 5 0 0.1 1.1 2.1 3.1 4.1 FREQUENCY (GHz) Figure 10. Gain vs. Frequency at VCE = 2.7 V, IC = 20 mA. 5.1 6 AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 2 mA Freq. S11 S21 S12 GHz Mag Ang dB Mag Ang dB 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.96 0.78 0.59 0.56 0.42 0.36 0.33 0.28 0.24 0.25 0.31 -12 -53 -84 -90 -117 -131 -140 -159 171 126 95 16.50 14.84 12.5 11.92 9.46 8.21 7.55 6.24 4.72 2.88 1.49 6.69 5.52 4.23 3.94 2.97 2.57 2.38 2.05 1.72 1.39 1.19 169 133 108 104 84 74 68 57 43 21 3 -38.44 -26.20 -23.4 -23.04 -21.71 -21.04 -20.56 -19.54 -17.76 -14.47 -11.32 S22 Mag Ang Mag Ang 82 60 50 49 46 47 48 50 53 52 45 0.98 0.88 0.79 0.77 0.72 0.70 0.69 0.69 0.68 0.66 0.63 -5 -19 -27 -28 -33 -36 -39 -43 -50 -64 -83 0.012 0.049 0.068 0.070 0.082 0.089 0.094 0.105 0.129 0.189 0.272 30 25 AT-32063 Typical Noise Parameters Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn — 0.9 1.8 2.4 0.75 1.26 1.60 13.7 10.8 9.6 0.74 0.55 0.45 47 101 139 0.37 0.22 0.13 GAIN (dB) Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 2 mA MSG 20 15 MAG 10 MSG S21 5 0 0.1 1.1 2.1 3.1 4.1 5.1 FREQUENCY (GHz) Figure 11. Gain vs. Frequency at VCE = 5 V, IC = 2 mA. AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 5 V, IC = 20 mA Freq. S11 S21 GHz Mag Ang dB 0.1 0.5 0.9 1.0 1.5 1.8 2.0 2.4 3.0 4.0 5.0 0.61 0.22 0.13 0.12 0.08 0.06 0.06 0.04 0.05 0.10 0.16 -36 -91 -115 -118 -137 -148 -159 175 131 99 86 30.56 21.75 17.02 16.14 12.80 11.31 10.46 9.02 7.35 5.39 4.05 S12 S22 Mag Ang dB Mag Ang Mag Ang 33.74 12.23 7.10 6.41 4.36 3.68 3.33 2.83 2.33 1.86 1.6 145 98 83 81 68 62 58 50 39 21 3 -40.46 -29.90 -25.40 -24.56 -21.23 -19.69 -18.79 -17.21 -15.22 -12.48 -10.27 0.01 0.03 0.05 0.06 0.09 0.10 0.12 0.14 0.17 0.24 0.31 75 72 72 71 69 66 65 61 56 46 34 0.86 0.6 0.57 0.57 0.57 0.57 0.57 0.57 0.56 0.54 0.50 -14 -19 -21 -21 -26 -30 -32 -37 -45 -58 -75 40 35 30 Common Emitter, Zo = 50 Ω, VCE = 5 V, IC = 20 mA 25 Freq. GHz Fmin dB GA dB Gopt Mag. Ang. Rn — 0.9 1.8 2.4 1.50 1.78 1.96 18.6 13.3 11.3 0.18 0.19 0.24 74 147 198 0.20 0.16 0.14 GAIN (dB) AT-32063 Typical Noise Parameters MSG 20 MAG 15 MSG 10 S21 5 0 0.1 1.1 2.1 3.1 4.1 FREQUENCY (GHz) Figure 12. Gain vs. Frequency at VCE = 5 V, IC = 20 mA. 5.1 7 Package Dimensions Outline 63 (SOT-363/SC-70) 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.650 BSC (0.025) 0.425 (0.017) TYP. 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 0.30 REF. 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 10° 0.30 (0.012) 0.10 (0.004) 0.20 (0.008) 0.10 (0.004) DIMENSIONS ARE IN MILLIMETERS (INCHES) Part Number Ordering Information Part Number AT-32063-TR1 AT-32063-BLK No. of Devices Container 3000 100 7" Reel antistatic bag Device Orientation REEL END VIEW TOP VIEW 4 mm 8 mm CARRIER TAPE II II II II USER FEED DIRECTION COVER TAPE Tape Dimensions For Outline 63 P P2 D P0 E F W D1 t1 (CARRIER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION 5° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.24 ± 0.10 2.34 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.088 ± 0.004 0.092 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 ± 0.30 0.255 ± 0.013 0.315 ± 0.012 0.010 ± 0.0005 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies Obsoletes 5965-1234E 5965-8921E (11/99)