PD- 93929 PROVISIONAL IRFBL17N50L SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l Motor Control l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Built in Fast Recovery Diode l Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings l HEXFET® Power MOSFET VDSS 500V VGS dv/dt TJ TSTG ID 0.28Ω 17A Super D2pakTM Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C RDS(on) Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) 17 10 68 200 1.6 ± 30 5.0 -55 to + 150 260 Units A W W/°C V V/ns °C Diode Characteristics Symbol IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 17 ––– ––– showing the A G integral reverse ––– ––– 68 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 17A, VGS = 0V ––– 180 ––– ns TJ = 125°C, IF = 17A ––– 420 ––– nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typical SMPS Topologies l Zero Voltage Switching Full and Half Bridge Circuits www.irf.com 1 6/2/00 IRFB17N50L PROVISIONAL Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ∆V(BR)DSS/∆TJ Min. Typ. Max. Units Conditions 500 ––– ––– V VGS = 0V, ID = 250µA ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.28 Ω VGS = 10V, ID = 10A 3.5 ––– 5.5 V VDS = V GS, ID = 250µA ––– ––– 50 µA VDS = 500V, VGS = 0V ––– ––– 2.0 mA VDS = 400V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 7.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 20 55 45 45 3000 300 20 Max. Units Conditions ––– S VDS = 50V, ID = 10A 110 ID = 17A 40 nC VDS = 400V 50 VGS = 10V, ––– VDD = 250V ––– ID = 17A ns ––– RG = 9.0Ω ––– VGS = 10V, ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 430 17 20 mJ A mJ Typ. Max. Units ––– ––– 0.63 40 °C/W Thermal Resistance Symbol RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mounted, steady-state) Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. Starting TJ = 25°C, L = 5.0mH, RG = 25Ω, IAS = 17A, ISD ≤ 17A, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C 2 www.irf.com IRFB17N50L PROVISIONAL TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10 .54 (.4 15) 10 .29 (.4 05) -B - 3 .7 8 (.149 ) 3 .5 4 (.139 ) 4.69 ( .18 5 ) 4.20 ( .16 5 ) -A - 1 .32 (.05 2) 1 .22 (.04 8) 6.47 (.25 5) 6.10 (.24 0) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 3 0.93 (.03 7) 0.69 (.02 7) 0 .3 6 (.01 4) 3X M B A M 0.55 (.02 2) 0.46 (.01 8) 2 .92 (.11 5) 2 .64 (.10 4) 2.54 (.10 0) 2X N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . TO-220AB Part Marking Information E X A M P L E : TH IS IS A N IR F1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN TE R N A TIO N A L R E C TIF IE R LOGO ASSEMBLY LOT CO DE PART NU MBER IR F 10 1 0 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 3