ETC IRFBL17N50L

PD- 93929
PROVISIONAL
IRFBL17N50L
SMPS MOSFET
Applications
Telecom and Data-Com off-Line SMPS
l Motor Control
l UninterruptIble Power Supply
Benefits
l Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristics
l Built in Fast Recovery Diode
l Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
Absolute Maximum Ratings
l
HEXFET® Power MOSFET
VDSS
500V
VGS
dv/dt
TJ
TSTG
ID
0.28Ω
17A
Super D2pakTM
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
RDS(on)
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
17
10
68
200
1.6
± 30
5.0
-55 to + 150
260
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
17
––– –––
showing the
A
G
integral reverse
––– –––
68
S
p-n junction diode.
––– ––– 1.5
V
TJ = 25°C, IS = 17A, VGS = 0V „
––– 180 –––
ns
TJ = 125°C, IF = 17A
––– 420 –––
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l
Zero Voltage Switching Full and Half Bridge Circuits
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1
6/2/00
IRFB17N50L
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
∆V(BR)DSS/∆TJ
Min. Typ. Max. Units
Conditions
500 ––– –––
V
VGS = 0V, ID = 250µA
––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA†
––– ––– 0.28
Ω
VGS = 10V, ID = 10A „
3.5
––– 5.5
V
VDS = V GS, ID = 250µA
––– ––– 50
µA
VDS = 500V, VGS = 0V
––– ––– 2.0
mA VDS = 400V, VGS = 0V, TJ = 125°C
––– ––– 100
VGS = 30V
nA
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
7.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
20
55
45
45
3000
300
20
Max. Units
Conditions
–––
S
VDS = 50V, ID = 10A
110
ID = 17A
40
nC
VDS = 400V
50
VGS = 10V, „
–––
VDD = 250V
–––
ID = 17A
ns
–––
RG = 9.0Ω
–––
VGS = 10V, „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
430
17
20
mJ
A
mJ
Typ.
Max.
Units
–––
–––
0.63
40
°C/W
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted, steady-state)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
‚ Starting TJ = 25°C, L = 5.0mH, RG = 25Ω,
IAS = 17A,
ƒ ISD ≤ 17A, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
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IRFB17N50L
PROVISIONAL
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10 .54 (.4 15)
10 .29 (.4 05)
-B -
3 .7 8 (.149 )
3 .5 4 (.139 )
4.69 ( .18 5 )
4.20 ( .16 5 )
-A -
1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5)
M IN
1
2
1 4.09 (.55 5)
1 3.47 (.53 0)
4.06 (.16 0)
3.55 (.14 0)
3X
3X
1 .4 0 (.0 55 )
1 .1 5 (.0 45 )
L E A D A S S IG NM E NT S
1 - GATE
2 - D R A IN
3 - S O U RC E
4 - D R A IN
3
0.93 (.03 7)
0.69 (.02 7)
0 .3 6 (.01 4)
3X
M
B A M
0.55 (.02 2)
0.46 (.01 8)
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82.
2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .
TO-220AB Part Marking Information
E X A M P L E : TH IS IS A N IR F1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M
A
IN TE R N A TIO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CO DE
PART NU MBER
IR F 10 1 0
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
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