PD - 90380 PROVISIONAL SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching Benefits Low Gate Charge Qg Reduces Drive Required l Improved Gate Resistance for Faster Switching l Fully Characterized Capacitance and Avalanche Voltage and Current l Lowest Conduction Loss in Package Outline l Effective COSS specified (See AN 1001) IRFPS59N60C HEXFET® Power MOSFET VDSS 600V RDS(on) max ID 0.045Ω 59A l Super-247™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force Max. 59 37 240 390 3.1 ± 20 TBD -40 to + 150 -55 to + 150 300 (1.6mm from case ) 20 Units A W W/°C V V/ns N Applicable Off Line SMPS Topologies: l l Power Factor Correction Boost Full Bridge www.irf.com 1 11/2/99 IRFPS59N60C Static @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage V(BR)DSS ∆V(BR)DSS/∆TJ Min. 600 ––– ––– 4.0 ––– ––– ––– ––– Typ. ––– 0.43 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V V GS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.045 Ω VGS = 10V, ID = 35A 6.0 V VDS = VGS, ID = 250µA 100 VDS = 600V, VGS = 0V µA 500 VDS = 480V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 35 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 33 110 86 18 10490 5140 280 24050 220 370 Max. Units Conditions ––– S VDS = 50V, ID = 35A 490 ID = 35A 100 nC VDS = 360V 250 VGS = 10V ––– VDD = 300V ––– ID = 35A ns ––– RG = 1.0Ω ––– R D = 8.5Ω ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 480V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 480V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– TBD 35 39 mJ A mJ Typ. Max. Units ––– 0.24 ––– 0.32 ––– 40 °C/W Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 59 ––– ––– showing the A G integral reverse ––– ––– 240 S p-n junction diode. ––– ––– 1.2 V TJ = 25°C, IS = 35A, VGS = 0V ––– 770 1150 ns TJ = 25°C, IF = 35A ––– 20 30 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFPS59N60C Super-247™ Package Outline Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300µs; duty cycle ≤ 2%. Starting TJ = 25°C, L = TBDmH RG = 25Ω, IAS = 59A, dv/dt=TBD V/ns. ISD ≤ TBDA, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 11/99 www.irf.com 3