IRF IRFPS59N60C

PD - 90380
PROVISIONAL
SMPS MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
Benefits
Low Gate Charge Qg Reduces Drive
Required
l Improved Gate Resistance for Faster
Switching
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Lowest Conduction Loss in Package
Outline
l Effective COSS specified (See AN 1001)
IRFPS59N60C
HEXFET® Power MOSFET
VDSS
600V
RDS(on) max
ID
0.045Ω
59A
l
Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
59
37
240
390
3.1
± 20
TBD
-40 to + 150
-55 to + 150
300 (1.6mm from case )
20
Units
A
W
W/°C
V
V/ns
N
Applicable Off Line SMPS Topologies:
l
l
Power Factor Correction Boost
Full Bridge
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1
11/2/99
IRFPS59N60C
Static @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V(BR)DSS
∆V(BR)DSS/∆TJ
Min.
600
–––
–––
4.0
–––
–––
–––
–––
Typ.
–––
0.43
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V GS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA†
0.045
Ω
VGS = 10V, ID = 35A „
6.0
V
VDS = VGS, ID = 250µA
100
VDS = 600V, VGS = 0V
µA
500
VDS = 480V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
33
110
86
18
10490
5140
280
24050
220
370
Max. Units
Conditions
–––
S
VDS = 50V, ID = 35A
490
ID = 35A
100
nC
VDS = 360V
250
VGS = 10V „
–––
VDD = 300V
–––
ID = 35A
ns
–––
RG = 1.0Ω
–––
R D = 8.5Ω „
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz,
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 480V …
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
TBD
35
39
mJ
A
mJ
Typ.
Max.
Units
–––
0.24
–––
0.32
–––
40
°C/W
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
59
––– –––
showing the
A
G
integral reverse
––– ––– 240
S
p-n junction diode.
––– ––– 1.2
V
TJ = 25°C, IS = 35A, VGS = 0V „
––– 770 1150
ns
TJ = 25°C, IF = 35A
––– 20
30
µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFPS59N60C
Super-247™ Package Outline
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ Starting TJ = 25°C, L = TBDmH
RG = 25Ω, IAS = 59A, dv/dt=TBD V/ns.
ƒ ISD ≤ TBDA, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 11/99
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