ETC NIB6404-5L/D

NIB6404-5L
Preferred Device
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SMARTDISCRETES
52 Amps, 40 Volts
Self Protected with Temperature Sense
N–Channel D2PAK
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SMARTDISCRETES devices are an advanced series of Power
MOSFETs which utilize ON Semiconductor’s latest MOSFET
technology process to achieve the lowest possible on–resistance per
silicon area while incorporating additional features such as clamp
diodes. They are capable of withstanding high energy in the avalanche
and commutation modes. The avalanche energy is specified to
eliminate guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
This new SMARTDISCRETES device features integrated
Gate–to–Source diodes for ESD protection, and Gate–to–Drain clamp
for overvoltage protection. Also, this device integrates a sense diode
for temperature monitoring.
• Ultra Low RDS(on) Provides Higher Efficiency
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Overvoltage Protection
• Temperature Sense Diode
• ESD Human Body Model Discharge Sensitivity Class 3
Drain–to–Source Voltage
Drain–to–Gate Voltage
Gate–to–Source Voltage
Operating and Storage
Temperature Range
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C (Note 1.)
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 25 A, L = 1.4 mH, RG = 10 kΩ)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 140°C
– Single Pulse (tp10 µs)
Total Power Dissipation (t ≤ 10 seconds)
Linear Derating Factor
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient (Note 1.)
Symbol
Value
Unit
VDSS
VDGR
40
Vdc
40
Vdc
VGS
TJ, Tstg
10
Vdc
–55 to
+175
°C
450
mJ
EAS
D
T2
G
T1
S
MARKING
DIAGRAM
TBD
D2PAK
CASE 936D
PLASTIC
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
52 AMPERES
40 VOLTS
RDS(on) = 20 mΩ
TBD = Specific Device Code
ORDERING INFORMATION
Device
NIB6404–5L
Adc
ID
ID
IDM
PD @ TA
= 25°C
52
25
200
115
0.76
RθJC
RθJA
1.3
80
Package
D2PAK
Shipping
TBD
Preferred devices are recommended choices for future use
and best overall value.
W
W/°C
°C/W
1. Measured while surface mounted to an FR4 board using the minimum
recommended pad size. Typical value is 64°C/W.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
 Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 1
1
Publication Order Number:
NIB6404–5L/D
NIB6404–5L
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
40
–
51
7.0
55
–
mV/°C
10
13
20
Vdc
–
–
–
1.1
0.2
4.0
100
2.0
20
–
0.02
1.0
1.0
–
1.7
4.5
2.0
–
mV/°C
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 2.)
(VGS = 0 Vdc, ID = 250 µAdc, –55°C < TJ < 175°C)
Temperature Coefficient (Negative)
V(BR)DSS
Gate–to–Source Clamp Voltage (Note 2.)
(VGS = 0 Vdc, IG = 20 µAdc)
V(BR)GSS
Zero Gate Voltage Drain Current
(VDS = 35 Vdc, VGS = 0 Vdc)
(VDS = 15 Vdc, VGS = 0 Vdc)
(VDS = 35 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current (VGS = 5.0 Vdc, VDS = 0 Vdc)
IGSS
Vdc
µAdc
µAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage (Note 2.)
(VDS = VGS, ID = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain–to–Source On–Resistance (Note 2.)
(VGS = 5.0 Vdc, ID = 20 Adc)
RDS(on)
–
18
20
mΩ
gFS
TBD
34
–
mhos
Ciss
–
1720
–
pF
Coss
–
525
–
Crss
–
120
–
td(on)
–
16
–
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 2.)
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vd
Vdc, VGS = 0 Vdc,
Vd
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 32 Vdc, ID = 25 Adc,
VGS = 5.0
5 0 Vdc,
Vdc
RG = 10 Ω) (Note 2.)
ns
tr
–
263
–
td(off)
–
149
–
tf
–
345
–
QT
–
29
–
Q1
–
6.0
–
Q2
–
16
–
Q3
–
2.0
–
VSD
–
–
0.876
0.746
1.2
–
Vdc
trr
–
60
–
ns
ta
–
29
–
tb
–
32
–
QRR
–
80
–
pC
(IF(R) = 250 µAdc) (Note 2.)
(IF(R) = 250 µAdc, TJ = 125°C)
VAC(ACR)
715
–
743
570
775
–
mVdc
IF(R) = 250 µAdc,
TJ = 160°C
VFTC
1.57
1.71
1.85
mV/°C
IF(R) = 125 µAdc to 250 µAdc
Vhys
25
37
50
mVdc
Fall Time
Gate Charge
(VDS = 32 Vdc, ID = 25 Adc,
VGS = 5.0 Vdc) (Note 2.)
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 2.)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 25 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 2.)
Reverse Recovery Stored Charge
TEMPERATURE SENSE DIODE CHARACTERISTICS
Forward (Reverse) On–Voltage
Temperature Coefficient
(Negative)
Forward Voltage Hysteresis
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NIB6404–5L
TYPICAL ELECTRICAL CHARACTERISTICS
40
5.0 V
45
4.0 V
4.5 V
40
I D, DRAIN CURRENT (AMPS)
I D, DRAIN CURRENT (AMPS)
50
3.5 V
35
TJ = 25°C
30
25
20
3.0 V
15
10
0
25
20
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25°C
10
–55°C
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN–TO–SOURCE RESISTANCE (m)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
50
45
TJ = 175°C
40
35
30
25
25°C
20
15
10
–55°C
5.0
0
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPS)
3.5
50
45
40
VGS = 3.0 V
35
3.5 V
30
25
4.0 V
20
5.0 V
15
10 V
10
5.0
TJ = 25°C
0
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
2.2
4500
VGS = 5.0 V
ID = 20 A
2.0
1.8
1.6
1.4
1.2
1.0
3000
2500
2000
1000
0.6
0
50
100
150
200
Ciss
1500
500
0
TJ = 25°C
3500
0.8
–50
VGS = 0 V
f = 1.0 MHz
4000
C, CAPACITANCE (pF)
RDS(on), DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
TJ = 175°C
15
0
0
RDS(on), DRAIN–TO–SOURCE RESISTANCE (m)
30
5.0
VGS = 2.5 V
5.0
35
Coss
Crss
0
5.0
10
15
20
25
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
30
NIB6404–5L
TYPICAL ELECTRICAL CHARACTERISTICS
20
5000
Ciss
18
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
4500
4000
3500
3000
Coss
2500
2000
1500
1000
TJ = 25°C
VDS = 0 V
f = 1 MHz
500
14
12
10
8.0
6.0
TJ = 175°C
4.0
25°C
2.0
0
0
0
2.0
4.0
6.0
8.0
0
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure 7. Capacitance Variation
Figure 8. Diode Forward Voltage
versus Current
VFTC, TEMPERATURE COEFFICIENT (mV/°C)
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0.9
IF(R) = 500 A
0.8
250 A
0.7
125 A
0.6
0.5
50 A
0.4
0.3
–100
0.1
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
1.0
VF, FORWARD VOLTAGE (V)
16
25 A
–50
0
50
100
200
150
–1.3
–1.4
–1.5
–1.6
IF(R) = 250 A
–1.7
–1.8
–1.9
–2.0
–2.1
–50
0
50
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Sense Diode Forward Voltage
Variation with Temperature
Figure 10. Sense Diode Temperature
Coefficient Variation with Temperature
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4
1.0
150
NIB6404–5L
PACKAGE DIMENSIONS
DPAK
CASE 936D–03
ISSUE B
–T–
OPTIONAL
CHAMFER
A
TERMINAL 6
E
U
S
K
B
V
H
1 2 3 4 5
M
L
J
D
0.010 (0.254)
M
T
P
N
G
R
C
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5
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. TAB CONTOUR OPTIONAL WITHIN DIMENSIONS
A AND K.
4. DIMENSIONS U AND V ESTABLISH A MINIMUM
MOUNTING SURFACE FOR TERMINAL 6.
5. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH OR GATE PROTRUSIONS. MOLD FLASH
AND GATE PROTRUSIONS NOT TO EXCEED
0.025 (0.635) MAXIMUM.
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
R
S
U
V
INCHES
MIN
MAX
0.386
0.403
0.356
0.368
0.170
0.180
0.026
0.036
0.045
0.055
0.067 BSC
0.539
0.579
0.125 MAX
0.050 REF
0.000
0.010
0.088
0.102
0.018
0.026
0.058
0.078
5 REF
0.116 REF
0.200 MIN
0.250 MIN
MILLIMETERS
MIN
MAX
9.804 10.236
9.042
9.347
4.318
4.572
0.660
0.914
1.143
1.397
1.702 BSC
13.691 14.707
3.175 MAX
1.270 REF
0.000
0.254
2.235
2.591
0.457
0.660
1.473
1.981
5 REF
2.946 REF
5.080 MIN
6.350 MIN
NIB6404–5L
Notes
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6
NIB6404–5L
Notes
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7
NIB6404–5L
SMARTDISCRETES is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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NIB6404–5L/D