NTF3055L108 Preferred Device Power MOSFET 3.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES 60 VOLTS RDS(on) = 108 m Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits N–Channel D MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Drain–to–Source Voltage VDSS 60 Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc VGS ± 15 ± 20 Vdc Vpk Rating Gate–to–Source Voltage – Continuous – Non–repetitive (tp ≤ 10 ms) Drain Current – Continuous @ TA = 25°C – Continuous @ TA = 100°C – Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (Note 1.) Total Power Dissipation @ TA = 25°C (Note 2.) Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc) Thermal Resistance –Junction to Ambient (Note 1.) –Junction to Ambient (Note 2.) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds G S MARKING DIAGRAM Adc ID ID IDM 3.0 1.4 9.0 Apk PD 2.1 1.3 0.014 Watts Watts W/°C TJ, Tstg –55 to 175 °C EAS 74 mJ 4 1 2 SOT–223 CASE 318E STYLE 3 3055L LWW 3 3055L L WW = Device Code = Location Code = Work Week PIN ASSIGNMENT 4 Drain °C/W RθJA RθJA 72.3 114 TL 260 °C 1. When surface mounted to an FR4 board using 1″ pad size, 1 oz. (Cu. Area 0.0995 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2–2.4 oz. (Cu. Area 0.272 in2). 1 Gate 2 3 Drain Source ORDERING INFORMATION Semiconductor Components Industries, LLC, 2001 June, 2001 – Rev. 0 1 Device Package Shipping NTF3055L108T1 SOT–223 1000 Tape & Reel NTF3055L108T3 SOT–223 4000 Tape & Reel NTF3055L108T3LF SOT–223 4000 Tape & Reel Publication Order Number: NTF3055L108/D NTF3055L108 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 60 – 68 68 – – – – – – 1.0 10 – – ± 100 1.0 – 1.68 4.6 2.0 – – 92 108 – 0.290 0.250 0.390 – gfs – 5.7 – Mhos Ciss – 313 440 pF Coss – 112 160 Crss – 40 60 td(on) – 11 25 tr – 35 70 td(off) – 22 45 tf – 27 60 QT – 7.6 15 Q1 – 1.4 – Q2 – 4.0 – – – 0.87 0.72 1.0 – trr – 35 – ta – 21 – tb – 14 – QRR – 0.044 – OFF CHARACTERISTICS V(BR)DSS Drain–to–Source Breakdown Voltage (Note 3.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate–Body Leakage Current Vdc µAdc IDSS (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS mV/°C nAdc ON CHARACTERISTICS (Note 3.) Gate Threshold Voltage (Note 3.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (Note 3.) (VGS = 5.0 Vdc, ID = 1.5 Adc) RDS(on) Static Drain–to–Source On–Resistance (Note 3.) (VGS = 5.0 Vdc, ID = 3.0 Adc) (VGS = 5.0 Vdc, ID = 1.5 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 3.) (VDS = 7.0 Vdc, ID = 3.0 Adc) Vdc mV/°C mΩ Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, Vd VGS = 0 V, V f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4.) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 30 Vdc, ID = 3.0 Adc, VGS = 5.0 5 0 Vdc, Vdc RG = 9.1 Ω) (Note 3.) Fall Time Gate Charge (VDS = 48 Vdc, Vd ID = 3.0 3 0 Adc, Ad VGS = 5.0 Vdc) (Note 3.) ns nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = 0 Vdc, TJ = 150°C) (Note 3.) Reverse Recovery Time (IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) (Note 3.) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 VSD Vdc ns µC NTF3055L108 6 6 5 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) VGS = 3.4 V VGS = 3.5 V VGS = 4.5 V 4 3 VGS = 6 V 2 VGS = 10 V VGS = 3.2 V VGS = 3 V VGS = 2.8 V 1 VGS = 2.5 V 1 0.5 2 1.5 2.5 TJ = 100°C 2 TJ = 25°C 1 3 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 0.16 VGS = 5 V TJ = 100°C 0.14 0.12 TJ = 25°C 0.1 0.08 TJ = –55°C 0.06 0.04 0 1 3 2 5 4 6 ID, DRAIN CURRENT (AMPS) 5 0.16 VGS = 10 V 0.14 TJ = 100°C 0.12 0.1 TJ = 25°C 0.08 0.06 TJ = –55°C 0.04 0.02 0 1 2 3 4 5 6 ID, DRAIN CURRENT (AMPS) Figure 3. On–Resistance vs. Gate–to–Source Voltage Figure 4. On–Resistance vs. Drain Current and Gate Voltage VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 10000 2 1.8 VGS = 0 V ID = 1.5 A VGS = 5 V TJ = 150°C 1000 IDSS, LEAKAGE (nA) RDS(on), DRAIN–TO–SOURCE RESISTANCE (Ω) 3 0 0 RDS(on), DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) 4 TJ = –55°C 0 0.02 VDS > = 10 V 5 1.6 1.4 1.2 1 100 TJ = 100°C 10 0.8 0.6 –50 1 –25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 5. On–Resistance Variation with Temperature Figure 6. Drain–to–Source Leakage Current vs. Voltage http://onsemi.com 3 60 C, CAPACITANCE (pF) VGS = 0 V VDS = 0 V 1000 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) NTF3055L108 TJ = 25°C Ciss 800 600 Crss Ciss 400 Coss 200 Crss 0 10 5 VGS 0 VDS 5 10 15 20 25 Q1 Q2 3 2 1 ID = 3 A TJ = 25°C 0 0 1 2 3 4 5 7 6 Figure 7. Capacitance Variation Figure 8. Gate–to–Source and Drain–to–Source Voltage vs. Total Charge 8 3.2 IS, SOURCE CURRENT (AMPS) t, TIME (ns) VGS 4 Qg, TOTAL GATE CHARGE (nC) VDS = 30 V ID = 3 A VGS = 5 V 100 tr tf td(off) 10 td(on) 1 10 100 2 1.6 1.2 0.8 0.4 0 0.54 0.58 0.62 0.66 0.7 0.74 0.78 0.82 0.86 0.9 Figure 10. Diode Forward Voltage vs. Current 10 ms dc 1 1 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 100 µs 1 10 100 EAS, SINGLE PULSE DRAIN–TO–SOURCE AVALANCHE ENERGY (mJ) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 10 0.01 0.1 2.4 VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS) VGS = 15 V SINGLE PULSE TC = 25°C 0.1 VGS = 0 V TJ = 25°C 2.8 RG, GATE RESISTANCE (Ω) 100 ID, DRAIN CURRENT (AMPS) QT 5 GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) 1000 1 6 80 ID = 7 A 70 60 50 40 30 20 10 0 25 50 75 100 125 150 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NTF3055L108 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE RESISTANCE (NORMALIZED) 10 1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 5 1 10 100 1000 NTF3055L108 PACKAGE DIMENSIONS SOT–223 (TO–261) CASE 318E–04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 3 B D L G J C 0.08 (0003) H M K http://onsemi.com 6 INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 NTF3055L108 Notes http://onsemi.com 7 NTF3055L108 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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