NTP60N06, NTB60N06 Advance Information Power MOSFET 60 Amps, 60 Volts N–Channel TO–220 and D2PAK http://onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. 60 AMPERES 60 VOLTS RDS(on) = 0.014 Ω Typical Applications • • • • Power Supplies Converters Power Motor Controls Bridge Circuits N–Channel D MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Drain–to–Source Voltage VDSS 60 Vdc Drain– to–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Rating Gate–to–Source Voltage – Continuous – Non–Repetitive (tp10 ms) Drain Current – Continuous @ TA = 25°C – Continuous @ TA 100°C – Single Pulse (tp10 µs) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1.) G VGS VGS 4 1 ID ID IDM 60 42.3 180 Adc PD 136.4 0.91 2.4 W W/°C W –55 to 175 °C Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 0.31 mH, IL(pk) = 47.6 A, VDS = 60 Vdc) EAS 352 mJ 2 3 1 D2PAK CASE 418B STYLE 2 TO–220AB CASE 221A STYLE 5 Apk TJ, Tstg Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds S 20 20 Operating and Storage Temperature Range Thermal Resistance – Junction–to–Case – Junction–to–Ambient (Note 1.) 4 Vdc 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 3 4 Drain 4 Drain NTB60N06 LLYWW °C/W RθJC RθJA 1.2 63.2 TL 260 NTP60N06 LLYWW 1 Gate °C 1. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). 2 1 3 3 Gate Drain Source Source NTx60N06 = Device Code 2 LL = Location Code Drain Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping NTP60N06 TO–220AB 50 Units/Rail NTB60N06 D2PAK 50 Units/Rail NTB60N06T4 D2PAK 800/Tape & Reel This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2000 December, 2000 – Rev. 0 1 Publication Order Number: NTP60N06/D NTP60N06, NTB60N06 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 60 – 72.3 69.8 – – – – – – 1.0 10 – – ±100 2.0 – 2.85 8.0 4.0 – – 11.5 14 – – 0.715 1.43 – – gFS – – – mhos Ciss – 2300 3220 pF Coss – 660 925 Crss – 144 300 td(on) – 25.5 50 tr – 180.7 360 td(off) – 94.5 200 OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Note 2.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ =150°C) IDSS Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (Note 2.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (Note 2.) (VGS = 10 Vdc, ID = 30 Adc) RDS(on) Static Drain–to–Source On–Resistance (Note 2.) (VGS = 10 Vdc, ID = 60 Adc) (VGS = 10 Vdc, ID = 30 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 2.) (VDS = 8.0 Vdc, ID = 12 Adc) Vdc mV/°C mΩ Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vd Vdc, VGS = 0 Vdc, Vd f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn–On Delay Time (VDD = 30 Vdc, ID = 60 Adc, VGS = 10 Vdc, Vdc RG = 9.1 Ω) (Note 2.) Rise Time Turn–Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, Vd ID = 60 Adc, Ad VGS = 10 Vdc) (Note 2.) ns tf – 142.5 300 QT – 62 81 Q1 – 10.8 – Q2 – 29.4 – VSD – – 0.99 0.87 1.05 – Vdc trr – 64.9 – ns ta – 44.1 – tb – 20.8 – QRR – 0.146 – nC SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 60 Adc, VGS = 0 Vdc) (Note 2.) (IS = 45 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 60 Adc, Ad VGS = 0 Vdc, Vd dlS/dt = 100 A/µs) (Note 2.) Reverse Recovery Stored Charge 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 µC NTP60N06, NTB60N06 PACKAGE DIMENSIONS TO–220 THREE–LEAD TO–220AB CASE 221A–09 ISSUE AA SEATING PLANE –T– B C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN D2PAK CASE 418B–03 ISSUE D C E V –B– 4 A 1 2 3 S –T– SEATING PLANE K J G D 3 PL 0.13 (0.005) H M T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 3 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 NTP60N06, NTB60N06 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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